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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    FBG30N04CC

    FBG30N04CC

    GAN FET HEMT 300V4A COTS 4FSMD-C

    EPC Space, LLC

    		 165 -
    RFQ
    		FBG30N04CC

    Datenblatt

         		- 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 300 V 4A (Tc) 5V 404mOhm @ 4A, 5V 2.8V @ 600µA 2.6 nC @ 5 V +6V, -4V 450 pF @ 150 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
    FBG20N18BSH

    FBG20N18BSH

    GAN FET HEMT 200V 18A 4FSMD-B

    EPC Space, LLC

    		 47 -
    RFQ
    		FBG20N18BSH

    Datenblatt

         		e-GaN® 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 200 V 18A (Tc) 5V 28mOhm @ 18A, 5V 2.5V @ 3mA 7 nC @ 5 V +6V, -4V 900 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
    FBG10N30BSH

    FBG10N30BSH

    GAN FET HEMT 100V 30A 4FSMD-B

    EPC Space, LLC

    		 40 -
    RFQ
    		FBG10N30BSH

    Datenblatt

         		eGaN® 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 100 V 30A (Tc) 5V 12mOhm @ 30A, 5V 2.5V @ 5mA 11 nC @ 5 V +6V, -4V 1000 pF @ 50 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
    PMN30XPEAX

    PMN30XPEAX

    SMALL SIGNAL MOSFET FOR AUTOMOTI

    Nexperia USA Inc.

    		 6,000 -
    RFQ
    		PMN30XPEAX

    Datenblatt

         		TrenchMOS™ SC-74, SOT-457 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 5.4A (Ta) 2.5V, 8V 33mOhm @ 5.4A, 8V 1.3V @ 250µA 16 nC @ 4.5 V ±12V 1025 pF @ 10 V - 660mW (Ta), 7.5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 6-TSOP
    MCQ16N03-TP

    MCQ16N03-TP

    MOSFET N-CH 30V 8-SOP

    Micro Commercial Co

    		 4,000 -
    RFQ
    		MCQ16N03-TP

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 16A 4.5V, 10V 12mOhm @ 10A, 10V 3V @ 250µA 13 nC @ 5 V ±20V 1550 pF @ 15 V - 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    SSM3K37CT,L3F

    SSM3K37CT,L3F

    MOSFET N-CH 20V 200MA CST3

    Toshiba Semiconductor and Storage

    		 8,794 -
    RFQ
    		SSM3K37CT,L3F

    Datenblatt

         		U-MOSIII SC-101, SOT-883 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 200mA (Ta) 1.5V, 4.5V 2.2Ohm @ 100mA, 4.5V 1V @ 1mA - ±10V 12 pF @ 10 V - 100mW (Ta) 150°C (TJ) - - Surface Mount CST3
    SSM3K35CT,L3F

    SSM3K35CT,L3F

    MOSFET N-CH 20V 180MA CST3

    Toshiba Semiconductor and Storage

    		 32,987 -
    RFQ
    		SSM3K35CT,L3F

    Datenblatt

         		- SC-101, SOT-883 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 180mA (Ta) 1.2V, 4V 3Ohm @ 50mA, 4V 1V @ 1mA - ±10V 9.5 pF @ 3 V - 100mW (Ta) 150°C - - Surface Mount CST3
    DMN3732UFB4Q-7B

    DMN3732UFB4Q-7B

    MOSFET BVDSS: 25V~30V X2-DFN1006

    Diodes Incorporated

    		 6,232 -
    RFQ
    		DMN3732UFB4Q-7B

    Datenblatt

         		- 3-XFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 1.3A (Ta) 1.8V, 4.5V 460mOhm @ 200mA, 4.5V 950mV @ 250µA 0.9 nC @ 4.5 V ±8V 40.8 pF @ 25 V - 490mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount X2-DFN1006-3
    SSM3J35CT,L3F

    SSM3J35CT,L3F

    MOSFET P-CHANNEL 20V 100MA CST3

    Toshiba Semiconductor and Storage

    		 6,186 -
    RFQ
    		SSM3J35CT,L3F

    Datenblatt

         		π-MOSVI SC-101, SOT-883 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 100mA (Ta) 1.2V, 4V 8Ohm @ 50mA, 4V 1V @ 1mA - ±10V 12.2 pF @ 3 V - 100mW (Ta) 150°C - - Surface Mount CST3
    2N7002KWHE3-TP

    2N7002KWHE3-TP

    N-CHANNEL MOSFET SOT-323

    Micro Commercial Co

    		 2,800 -
    RFQ
    		2N7002KWHE3-TP

    Datenblatt

         		- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 340mA 4.5V, 10V 2.5Ohm @ 300mA, 10V 2V @ 1mA - ±20V 40 pF @ 10 V - 330mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-323
    2N7002KWA-TP

    2N7002KWA-TP

    N-CHANNEL MOSFET SOT-323

    Micro Commercial Co

    		 2,570 -
    RFQ
    		2N7002KWA-TP

    Datenblatt

         		- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 340mA 4.5V, 10V 5Ohm @ 500mA, 10V 2V @ 250µA - ±20V 40 pF @ 10 V - 330mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-323
    DMN2991UT-7

    DMN2991UT-7

    MOSFET BVDSS: 8V~24V SOT523 T&R

    Diodes Incorporated

    		 2,024 -
    RFQ
    		DMN2991UT-7

    Datenblatt

         		- SOT-523 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 300mA (Ta) 1.5V, 4.5V 3Ohm @ 100mA, 4.5V 1V @ 250µA 0.35 nC @ 4.5 V ±10V 21.5 pF @ 15 V - 280mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-523
    SSM3K7002KF,LXHF

    SSM3K7002KF,LXHF

    SMOS NCH I: 0.4A, V: 60V, P: 270

    Toshiba Semiconductor and Storage

    		 17,109 -
    RFQ
    		SSM3K7002KF,LXHF

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 400mA (Ta) 4.5V, 10V 1.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.6 nC @ 4.5 V ±20V 40 pF @ 10 V - 270mW (Ta) 150°C Automotive AEC-Q101 Surface Mount S-Mini
    DMN62D1LFD-13

    DMN62D1LFD-13

    MOSFET N-CH 60V 400MA 3DFN

    Diodes Incorporated

    		 9,911 -
    RFQ
    		DMN62D1LFD-13

    Datenblatt

         		- 3-UDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 400mA (Ta) 1.8V, 4V 2Ohm @ 100mA, 4V 1V @ 250µA 0.55 nC @ 4.5 V ±20V 36 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount X1-DFN1212-3
    SI3139KE-TP

    SI3139KE-TP

    MOSFET P-CH 20V 660MA SOT523

    Micro Commercial Co

    		 2,945 -
    RFQ
    		SI3139KE-TP

    Datenblatt

         		- SOT-523 Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 20 V 660mA (Tj) 4.5V 700mOhm @ 600mA, 4.5V 1.1V @ 250µA - ±12V 170 pF @ 6 V - 150mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-523
    PMZB950UPEYL

    PMZB950UPEYL

    MOSFET P-CH 20V 500MA DFN1006B-3

    Nexperia USA Inc.

    		 8,320 -
    RFQ
    		PMZB950UPEYL

    Datenblatt

         		- 3-XFDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.2V, 4.5V 1.4Ohm @ 500mA, 4.5V 950mV @ 250µA 2.1 nC @ 4.5 V ±8V 43 pF @ 10 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN1006B-3
    PMN230ENEAX

    PMN230ENEAX

    MOSFET N-CH 60V 1.8A 6TSOP

    Nexperia USA Inc.

    		 7,478 -
    RFQ
    		PMN230ENEAX

    Datenblatt

         		- SC-74, SOT-457 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 1.8A (Ta) 4.5V, 10V 222mOhm @ 1.8A, 10V 2.7V @ 250µA 3.8 nC @ 10 V ±20V 110 pF @ 30 V - 625mW (Ta), 5.4W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 6-TSOP
    PJC138L_R1_00001

    PJC138L_R1_00001

    60V P-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 2,256 -
    RFQ
    		PJC138L_R1_00001

    Datenblatt

         		- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 1.8V, 10V 4.2Ohm @ 200mA, 10V 1.5V @ 250µA 0.7 nC @ 4.5 V ±20V 15 pF @ 15 V - 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-323
    PXN9R0-30QLJ

    PXN9R0-30QLJ

    PXN9R0-30QL/SOT8002/MLPAK33

    Nexperia USA Inc.

    		 4,681 -
    RFQ
    		PXN9R0-30QLJ

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 11.4A (Ta), 41.8A (Tc) 4.5V, 10V 9.1mOhm @ 11.4A, 10V 2.5V @ 250µA 20.7 nC @ 10 V ±20V 865 pF @ 15 V - 1.9W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount MLPAK33
    BSD316SNH6327XTSA1

    BSD316SNH6327XTSA1

    MOSFET N-CH 30V 1.4A SOT363-6

    Infineon Technologies

    		 5,735 -
    RFQ
    		BSD316SNH6327XTSA1

    Datenblatt

         		OptiMOS™ 6-VSSOP, SC-88, SOT-363 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 1.4A (Ta) 4.5V, 10V 160mOhm @ 1.4A, 10V 2V @ 3.7µA 0.6 nC @ 5 V ±20V 94 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT363-PO
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