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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SSM6K518NU,LF

    SSM6K518NU,LF

    MOSFET N-CH 20V 6A 6UDFNB

    Toshiba Semiconductor and Storage

    		 5,838 -
    RFQ
    		SSM6K518NU,LF

    Datenblatt

         		- 6-WDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.5V, 4.5V 33mOhm @ 4A, 4.5V 1V @ 1mA 3.6 nC @ 4.5 V ±8V 410 pF @ 10 V - 1.25W (Ta) 150°C - - Surface Mount 6-UDFNB (2x2)
    DMN2100UDM-7

    DMN2100UDM-7

    MOSFET N-CH 20V 3.3A SOT-26

    Diodes Incorporated

    		 4,790 -
    RFQ

    -

    		 - SOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 3.3A (Ta) 1.5V, 4.5V 55mOhm @ 6A, 4.5V 1V @ 250µA - ±8V 555 pF @ 10 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-26
    VN2222LL-G-P003

    VN2222LL-G-P003

    MOSFET N-CH 60V 230MA TO92-3

    Microchip Technology

    		 2,004 -
    RFQ
    		VN2222LL-G-P003

    Datenblatt

         		- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 230mA (Tj) 5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 1mA - ±30V 60 pF @ 25 V - 400mW (Ta), 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
    SI2377EDS-T1-BE3

    SI2377EDS-T1-BE3

    P-CHANNEL 20-V (D-S) MOSFET

    Vishay Siliconix

    		 1,900 -
    RFQ
    		SI2377EDS-T1-BE3

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 3.7A (Ta), 4.4A (Tc) 1.5V, 4.5V 61mOhm @ 3.2A, 4.5V 1V @ 250µA 21 nC @ 8 V ±8V - - 1.25W (Ta), 1.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
    SI1443EDH-T1-BE3

    SI1443EDH-T1-BE3

    MOSFET P-CH 30V 4A/4A SC70-6

    Vishay Siliconix

    		 6,220 -
    RFQ
    		SI1443EDH-T1-BE3

    Datenblatt

         		TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta), 4A (Tc) - 54mOhm @ 4.3A, 10V 1.5V @ 250µA 28 nC @ 10 V ±12V - - 1.6W (Ta), 2.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    PMPB15ENEX

    PMPB15ENEX

    SMALL SIGNAL MOSFET FOR MOBILE

    Nexperia USA Inc.

    		 2,920 -
    RFQ
    		PMPB15ENEX

    Datenblatt

         		- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 10V 22mOhm @ 7A, 10V 2.5V @ 250µA 14 nC @ 10 V ±20V 440 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount DFN2020MD-6
    PMCB60XNEAYL

    PMCB60XNEAYL

    SMALL SIGNAL MOSFET FOR MOBILE

    Nexperia USA Inc.

    		 7,554 -
    RFQ
    		PMCB60XNEAYL

    Datenblatt

         		- 3-XFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 3.5A (Ta) 1.8V, 4.5V 55mOhm @ 3.5A, 4.5V 1.1V @ 250µA 7.5 nC @ 4.5 V ±12V 420 pF @ 15 V - 480mW (Ta), 7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DSN1006-3
    PMPB50ENEX

    PMPB50ENEX

    MOSFET DFN2020MD-6

    Nexperia USA Inc.

    		 2,500 -
    RFQ
    		PMPB50ENEX

    Datenblatt

         		- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 6.9A (Ta) 4.5V, 10V 43mOhm @ 5.1A, 10V 2.5V @ 250µA 10 nC @ 10 V ±20V 271 pF @ 15 V - 1.9W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount DFN2020MD-6
    SI1401EDH-T1-BE3

    SI1401EDH-T1-BE3

    MOSFET P-CH 12V 4A/4A SC70-6

    Vishay Siliconix

    		 2,000 -
    RFQ
    		SI1401EDH-T1-BE3

    Datenblatt

         		TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12 V 4A (Ta), 4A (Tc) - 34mOhm @ 5.5A, 4.5V 1V @ 250µA 36 nC @ 8 V ±10V - - 1.6W (Ta), 2.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    IPP80R900P7XKSA1

    IPP80R900P7XKSA1

    MOSFET N-CH 800V 6A TO220-3

    Infineon Technologies

    		 8,619 -
    RFQ
    		IPP80R900P7XKSA1

    Datenblatt

         		CoolMOS™ P7 TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 2.2A, 10V 3.5V @ 110µA 15 nC @ 10 V ±20V 350 pF @ 500 V - 45W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    RTL020P02FRATR

    RTL020P02FRATR

    MOSFET P-CH 20V 2A TUMT6

    Rohm Semiconductor

    		 4,408 -
    RFQ
    		RTL020P02FRATR

    Datenblatt

         		- 6-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 2.5V, 4.5V 135mOhm @ 2A, 4.5V 2V @ 1mA 4.9 nC @ 4.5 V ±12V 430 pF @ 10 V - 1W (Ta) 150°C Automotive AEC-Q101 Surface Mount TUMT6
    SIB4316EDK-T1-GE3

    SIB4316EDK-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET POWE

    Vishay Siliconix

    		 8,850 -
    RFQ
    		SIB4316EDK-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SC-75-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 4.5A (Ta), 6A (Tc) 2.5V, 10V 57mOhm @ 4A, 10V 1.4V @ 250µA 12 nC @ 10 V ±12V - - 1.9W (Ta), 10W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-75-6
    SQA410CEJW-T1_GE3

    SQA410CEJW-T1_GE3

    AUTOMOTIVE N-CHANNEL 20 V (D-S)

    Vishay Siliconix

    		 8,303 -
    RFQ
    		SQA410CEJW-T1_GE3

    Datenblatt

         		TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 7.8A (Tc) 1.8V, 4.5V 28mOhm @ 5A, 4.5V 1.1V @ 250µA 8 nC @ 4.5 V ±8V 525 pF @ 10 V - 13.6W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    TSM240N03CX6 RFG

    TSM240N03CX6 RFG

    MOSFET N-CHANNEL 30V 6.5A SOT26

    Taiwan Semiconductor Corporation

    		 11,512 -
    RFQ
    		TSM240N03CX6 RFG

    Datenblatt

         		- SOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Tc) 4.5V, 10V 24mOhm @ 6A, 10V 2.5V @ 250µA 4.1 nC @ 4.5 V ±20V 345 pF @ 25 V - 1.56W (Tc) 150°C (TJ) - - Surface Mount SOT-26
    PXP018-30QLJ

    PXP018-30QLJ

    PXP018-30QL/SOT8002/MLPAK33

    Nexperia USA Inc.

    		 2,963 -
    RFQ
    		PXP018-30QLJ

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 7.5A (Ta), 19.2A (Tc) 4.5V, 10V 18mOhm @ 7.5A, 10V 2.5V @ 250µA 10.8 nC @ 10 V ±20V 447 pF @ 15 V - 1.7W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount MLPAK33
    RF4E070GNTR

    RF4E070GNTR

    MOSFET N-CH 30V 7A HUML2020L8

    Rohm Semiconductor

    		 2,340 -
    RFQ
    		RF4E070GNTR

    Datenblatt

         		- 8-PowerUDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 21.4mOhm @ 7A, 10V 2.5V @ 250µA 4.8 nC @ 10 V ±20V 220 pF @ 15 V - 2W (Ta) 150°C (TJ) - - Surface Mount HUML2020L8
    AO6409A

    AO6409A

    MOSFET P-CH 20V 5.5A 6TSOP

    Alpha & Omega Semiconductor Inc.

    		 5,594 -
    RFQ
    		AO6409A

    Datenblatt

         		- SC-74, SOT-457 Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 20 V 5.5A (Ta) 1.8V, 4.5V 41mOhm @ 5.5A, 4.5V 900mV @ 250µA 11 nC @ 4.5 V ±8V 905 pF @ 10 V - 2.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
    DMN3025LFG-7

    DMN3025LFG-7

    MOSFET N CH 30V 7.5A POWERDI

    Diodes Incorporated

    		 19,904 -
    RFQ
    		DMN3025LFG-7

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 7.5A (Ta) 4.5V, 10V 18mOhm @ 7.8A, 10V 2V @ 250µA 11.6 nC @ 10 V ±20V 605 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount POWERDI3333-8
    DMT3006LDK-7

    DMT3006LDK-7

    MOSFET N-CH 30V 17.1A/46.2A 8DFN

    Diodes Incorporated

    		 2,409 -
    RFQ
    		DMT3006LDK-7

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 17.1A (Ta), 46.2A (Tc) 4.5V, 10V 6.5mOhm @ 12A, 10V 3V @ 250µA 22.6 nC @ 10 V ±20V 1320 pF @ 15 V - 1.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount V-DFN3030-8
    RAQ045P01TCR

    RAQ045P01TCR

    MOSFET P-CH 12V 4.5A TSMT6

    Rohm Semiconductor

    		 7,344 -
    RFQ
    		RAQ045P01TCR

    Datenblatt

         		- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12 V 4.5A (Ta) 1.5V, 4.5V 30mOhm @ 4.5A, 4.5V 1V @ 1mA 40 nC @ 4.5 V -8V 4200 pF @ 6 V - 600mW (Ta) 150°C (TJ) - - Surface Mount TSMT6 (SC-95)
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