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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IXTX46N50L

    IXTX46N50L

    MOSFET N-CH 500V 46A PLUS247-3

    Littelfuse Inc.

    		 686 -
    RFQ
    		IXTX46N50L

    Datenblatt

         		Linear TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 20V 160mOhm @ 500mA, 20V 6V @ 250µA 260 nC @ 15 V ±30V 7000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
    IXFN120N65X2

    IXFN120N65X2

    MOSFET N-CH 650V 108A SOT227B

    Littelfuse Inc.

    		 528 -
    RFQ
    		IXFN120N65X2

    Datenblatt

         		HiPerFET™, Ultra X2 SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 650 V 108A (Tc) 10V 24mOhm @ 54A, 10V 5.5V @ 8mA 225 nC @ 10 V ±30V 15500 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
    MSC025SMA120S

    MSC025SMA120S

    SICFET N-CH 1.2KV 100A D3PAK

    Microchip Technology

    		 127 -
    RFQ
    		MSC025SMA120S

    Datenblatt

         		- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 89A (Tc) - - - - - - - - -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
    IXFB30N120P

    IXFB30N120P

    MOSFET N-CH 1200V 30A PLUS264

    Littelfuse Inc.

    		 448 -
    RFQ
    		IXFB30N120P

    Datenblatt

         		HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 30A (Tc) 10V 350mOhm @ 500mA, 10V 6.5V @ 1mA 310 nC @ 10 V ±20V 22500 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS264™
    IXFN360N15T2

    IXFN360N15T2

    MOSFET N-CH 150V 310A SOT227B

    Littelfuse Inc.

    		 250 -
    RFQ
    		IXFN360N15T2

    Datenblatt

         		HiPerFET™, TrenchT2™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 150 V 310A (Tc) 10V 4mOhm @ 60A, 10V 5V @ 8mA 715 nC @ 10 V ±20V 47500 pF @ 25 V - 1070W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227B
    IXFN38N100P

    IXFN38N100P

    MOSFET N-CH 1000V 38A SOT-227B

    Littelfuse Inc.

    		 270 -
    RFQ
    		IXFN38N100P

    Datenblatt

         		HiPerFET™, Polar SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 38A (Tc) 10V 210mOhm @ 19A, 10V 6.5V @ 1mA 350 nC @ 10 V ±30V 24000 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
    IXFN300N20X3

    IXFN300N20X3

    MOSFET N-CH 200V 300A SOT227B

    Littelfuse Inc.

    		 271 -
    RFQ
    		IXFN300N20X3

    Datenblatt

         		HiPerFET™, Ultra X3 SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 200 V 300A (Tc) 10V 3.5mOhm @ 150A, 10V 4.5V @ 8mA 375 nC @ 10 V ±20V 23800 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
    SCT3030KLGC11

    SCT3030KLGC11

    SICFET N-CH 1200V 72A TO247N

    Rohm Semiconductor

    		 265 -
    RFQ
    		SCT3030KLGC11

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 72A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 131 nC @ 18 V +22V, -4V 2222 pF @ 800 V - 339W (Tc) 175°C (TJ) - - Through Hole TO-247N
    TW015N120C,S1F

    TW015N120C,S1F

    G3 1200V SIC-MOSFET TO-247 15MO

    Toshiba Semiconductor and Storage

    		 30 -
    RFQ
    		TW015N120C,S1F

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 18V 20mOhm @ 50A, 18V 5V @ 11.7mA 158 nC @ 18 V +25V, -10V 6000 pF @ 800 V - 431W (Tc) 175°C - - Through Hole TO-247
    APT50M38JLL

    APT50M38JLL

    MOSFET N-CH 500V 88A ISOTOP

    Microchip Technology

    		 89 -
    RFQ
    		APT50M38JLL

    Datenblatt

         		POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 88A (Tc) 10V 38mOhm @ 44A, 10V 5V @ 5mA 270 nC @ 10 V ±30V 12000 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
    APT10021JFLL

    APT10021JFLL

    MOSFET N-CH 1000V 37A ISOTOP

    Microchip Technology

    		 56 -
    RFQ
    		APT10021JFLL

    Datenblatt

         		POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 37A (Tc) 10V 210mOhm @ 18.5A, 10V 5V @ 5mA 395 nC @ 10 V ±30V 9750 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
    APT12040JVR

    APT12040JVR

    MOSFET N-CH 1200V 26A SOT227

    Microchip Technology

    		 43 -
    RFQ
    		APT12040JVR

    Datenblatt

         		POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 26A (Tc) 10V 400mOhm @ 13A, 10V 4V @ 5mA 1200 nC @ 10 V ±30V 18000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
    MSCSM120SKM31CTBL1NG

    MSCSM120SKM31CTBL1NG

    PM-MOSFET-SIC-SBD-BL1

    Microchip Technology

    		 31 -
    RFQ
    		MSCSM120SKM31CTBL1NG

    Datenblatt

         		- Module Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 79A 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    FBG04N30BC

    FBG04N30BC

    GAN FET HEMT 40V30A COTS 4FSMD-B

    EPC Space, LLC

    		 141 -
    RFQ
    		FBG04N30BC

    Datenblatt

         		FSMD-B 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 40 V 30A (Tc) 5V 9mOhm @ 30A, 5V 2.5V @ 9mA 11.4 nC @ 5 V +6V, -4V 1300 pF @ 20 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
    EPC7003AC

    EPC7003AC

    GAN FET HEMT 100V 5A COTS 4UB

    EPC Space, LLC

    		 138 -
    RFQ
    		EPC7003AC

    Datenblatt

         		- 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 100 V 10A (Tc) 10V 42mOhm @ 10A, 5V 2.5V @ 1.4mA 1.5 nC @ 5 V +6V, -4V 168 pF @ 50 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
    FBG30N04CC

    FBG30N04CC

    GAN FET HEMT 300V4A COTS 4FSMD-C

    EPC Space, LLC

    		 165 -
    RFQ
    		FBG30N04CC

    Datenblatt

         		- 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 300 V 4A (Tc) 5V 404mOhm @ 4A, 5V 2.8V @ 600µA 2.6 nC @ 5 V +6V, -4V 450 pF @ 150 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
    FBG20N18BSH

    FBG20N18BSH

    GAN FET HEMT 200V 18A 4FSMD-B

    EPC Space, LLC

    		 47 -
    RFQ
    		FBG20N18BSH

    Datenblatt

         		e-GaN® 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 200 V 18A (Tc) 5V 28mOhm @ 18A, 5V 2.5V @ 3mA 7 nC @ 5 V +6V, -4V 900 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
    FBG10N30BSH

    FBG10N30BSH

    GAN FET HEMT 100V 30A 4FSMD-B

    EPC Space, LLC

    		 40 -
    RFQ
    		FBG10N30BSH

    Datenblatt

         		eGaN® 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 100 V 30A (Tc) 5V 12mOhm @ 30A, 5V 2.5V @ 5mA 11 nC @ 5 V +6V, -4V 1000 pF @ 50 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
    PMN30XPEAX

    PMN30XPEAX

    SMALL SIGNAL MOSFET FOR AUTOMOTI

    Nexperia USA Inc.

    		 6,000 -
    RFQ
    		PMN30XPEAX

    Datenblatt

         		TrenchMOS™ SC-74, SOT-457 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 5.4A (Ta) 2.5V, 8V 33mOhm @ 5.4A, 8V 1.3V @ 250µA 16 nC @ 4.5 V ±12V 1025 pF @ 10 V - 660mW (Ta), 7.5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 6-TSOP
    MCQ16N03-TP

    MCQ16N03-TP

    MOSFET N-CH 30V 8-SOP

    Micro Commercial Co

    		 4,000 -
    RFQ
    		MCQ16N03-TP

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 16A 4.5V, 10V 12mOhm @ 10A, 10V 3V @ 250µA 13 nC @ 5 V ±20V 1550 pF @ 15 V - 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
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