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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    STF12N50DM2

    STF12N50DM2

    MOSFET N-CH 500V 11A TO220FP

    STMicroelectronics

    		 981 -
    RFQ
    		STF12N50DM2

    Datenblatt

         		MDmesh™ DM2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 350mOhm @ 5.5A, 10V 5V @ 250µA 16 nC @ 10 V ±25V 628 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    IRF9Z34SPBF

    IRF9Z34SPBF

    MOSFET P-CH 60V 18A D2PAK

    Vishay Siliconix

    		 145 -
    RFQ
    		IRF9Z34SPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 10V 140mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    SIR688DP-T1-GE3

    SIR688DP-T1-GE3

    MOSFET N-CH 60V 60A PPAK SO-8

    Vishay Siliconix

    		 1,258 -
    RFQ
    		SIR688DP-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 2.7V @ 250µA 66 nC @ 10 V ±20V 3105 pF @ 30 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    AOB12N65L

    AOB12N65L

    MOSFET N-CH 650V 12A TO263

    Alpha & Omega Semiconductor Inc.

    		 1,011 -
    RFQ
    		AOB12N65L

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 720mOhm @ 6A, 10V 4.5V @ 250µA 48 nC @ 10 V ±30V 2150 pF @ 25 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IRF4104PBF

    IRF4104PBF

    MOSFET N-CH 40V 75A TO220AB

    Infineon Technologies

    		 888 -
    RFQ
    		IRF4104PBF

    Datenblatt

         		HEXFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.5mOhm @ 75A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3000 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    SIHD7N60E-GE3

    SIHD7N60E-GE3

    MOSFET N-CH 600V 7A DPAK

    Vishay Siliconix

    		 134 -
    RFQ
    		SIHD7N60E-GE3

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 4V @ 250µA 40 nC @ 10 V ±30V 680 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    TK56A12N1,S4X

    TK56A12N1,S4X

    MOSFET N-CH 120V 56A TO220SIS

    Toshiba Semiconductor and Storage

    		 118 -
    RFQ
    		TK56A12N1,S4X

    Datenblatt

         		U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 120 V 56A (Tc) 10V 7.5mOhm @ 28A, 10V 4V @ 1mA 69 nC @ 10 V ±20V 4200 pF @ 60 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    BSZ011NE2LS5IATMA1

    BSZ011NE2LS5IATMA1

    MOSFET N-CH 25V 35A/40A TSDSON

    Infineon Technologies

    		 14,434 -
    RFQ
    		BSZ011NE2LS5IATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 35A (Ta), 40A (Tc) 4.5V, 10V 1.1mOhm @ 20A, 10V 2V @ 250µA 50 nC @ 10 V ±16V 3400 pF @ 12 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSDSON-8-34
    MCP200N06Y-BP

    MCP200N06Y-BP

    N-CHANNEL MOSFET,TO-220AB(H)

    Micro Commercial Co

    		 2,553 -
    RFQ

    -

    		 - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 200A 10V 3.2mOhm @ 20A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 4165 pF @ 25 V - 260W -55°C ~ 150°C (TJ) - - Through Hole TO-220AB (H)
    STP11NK40Z

    STP11NK40Z

    MOSFET N-CH 400V 9A TO220AB

    STMicroelectronics

    		 1,003 -
    RFQ
    		STP11NK40Z

    Datenblatt

         		SuperMESH™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 400 V 9A (Tc) 10V 550mOhm @ 4.5A, 10V 4.5V @ 100µA 32 nC @ 10 V ±30V 930 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    IPD90N10S406ATMA1

    IPD90N10S406ATMA1

    MOSFET N-CH 100V 90A TO252-3

    Infineon Technologies

    		 2,170 -
    RFQ
    		IPD90N10S406ATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 10V 6.7mOhm @ 90A, 10V 3.5V @ 90µA 68 nC @ 10 V ±20V 4870 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-313
    SIHP11N80AE-GE3

    SIHP11N80AE-GE3

    MOSFET N-CH 800V 8A TO220AB

    Vishay Siliconix

    		 831 -
    RFQ
    		SIHP11N80AE-GE3

    Datenblatt

         		E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 450mOhm @ 5.5A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 804 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    IPA65R380E6XKSA1

    IPA65R380E6XKSA1

    MOSFET N-CH 650V 10.6A TO220-FP

    Infineon Technologies

    		 408 -
    RFQ
    		IPA65R380E6XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    SQJ401EP-T1_GE3

    SQJ401EP-T1_GE3

    MOSFET P-CH 12V 32A PPAK SO-8

    Vishay Siliconix

    		 294 -
    RFQ
    		SQJ401EP-T1_GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12 V 32A (Tc) 2.5V, 4.5V 6mOhm @ 15A, 4.5V 1.5V @ 250µA 164 nC @ 4.5 V ±8V 10015 pF @ 6 V - 83W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    STF16N60M2

    STF16N60M2

    MOSFET N-CH 600V 12A TO220FP

    STMicroelectronics

    		 132 -
    RFQ
    		STF16N60M2

    Datenblatt

         		MDmesh™ M2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 320mOhm @ 6A, 10V 4V @ 250µA 19 nC @ 10 V ±25V 700 pF @ 100 V - 25W (Tc) 150°C (TJ) - - Through Hole TO-220FP
    STD7N80K5

    STD7N80K5

    MOSFET N-CH 800V 6A DPAK

    STMicroelectronics

    		 11,891 -
    RFQ
    		STD7N80K5

    Datenblatt

         		SuperMESH5™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 1.2Ohm @ 3A, 10V 5V @ 100µA 13.4 nC @ 10 V ±30V 360 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    RJK1052DPB-00#J5

    RJK1052DPB-00#J5

    MOSFET N-CH 100V 20A LFPAK

    Renesas Electronics Corporation

    		 6,572 -
    RFQ
    		RJK1052DPB-00#J5

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Ta) 4.5V, 10V 20mOhm @ 10A, 10V - 29 nC @ 4.5 V ±20V 4160 pF @ 10 V - 55W (Tc) 150°C (TJ) - - Surface Mount LFPAK
    ISC012N04NM6ATMA1

    ISC012N04NM6ATMA1

    TRENCH <= 40V PG-TDSON-8

    Infineon Technologies

    		 13,858 -
    RFQ
    		ISC012N04NM6ATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 36A (Ta), 232A (Tc) 6V, 10V 1.2mOhm @ 50A, 10V 2.8V @ 747µA 64 nC @ 10 V ±20V 4600 pF @ 20 V - 3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8 FL
    SI4434ADY-T1-GE3

    SI4434ADY-T1-GE3

    MOSFET N-CH 250V 2.8A/4.1A 8SO

    Vishay Siliconix

    		 9,208 -
    RFQ
    		SI4434ADY-T1-GE3

    Datenblatt

         		ThunderFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 2.8A (Ta), 4.1A (Tc) 7.5V, 10V 150mOhm @ 2.8A, 10V 4V @ 250µA 16.5 nC @ 10 V ±20V 600 pF @ 125 V - 2.9W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF620SPBF

    IRF620SPBF

    MOSFET N-CH 200V 5.2A D2PAK

    Vishay Siliconix

    		 847 -
    RFQ
    		IRF620SPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
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