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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    STF5N95K5

    STF5N95K5

    MOSFET N-CH 950V 3.5A TO220FP

    STMicroelectronics

    		 728 -
    RFQ
    		STF5N95K5

    Datenblatt

         		SuperMESH5™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 950 V 3.5A (Tc) 10V 2.5Ohm @ 1.5A, 10V 5V @ 100µA 12.5 nC @ 10 V ±30V 220 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    IRLR3636TRLPBF

    IRLR3636TRLPBF

    MOSFET N-CH 60V 50A DPAK

    Infineon Technologies

    		 705 -
    RFQ
    		IRLR3636TRLPBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 6.8mOhm @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V ±16V 3779 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    FDMC008N08C

    FDMC008N08C

    MOSFET N-CHANNEL 80V 60A 8PQFN

    onsemi

    		 649 -
    RFQ
    		FDMC008N08C

    Datenblatt

         		PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 6V, 10V 7.8mOhm @ 21A, 10V 4V @ 120µA 29 nC @ 10 V ±20V 2150 pF @ 40 V - 57W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (3.3x3.3), Power33
    SIS402DN-T1-GE3

    SIS402DN-T1-GE3

    MOSFET N-CH 30V 35A PPAK1212-8

    Vishay Siliconix

    		 4,782 -
    RFQ
    		SIS402DN-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 6mOhm @ 19A, 10V 2.2V @ 250µA 42 nC @ 10 V ±20V 1700 pF @ 15 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
    SI7190ADP-T1-RE3

    SI7190ADP-T1-RE3

    MOSFET N-CH 250V 4.3A/14.4A PPAK

    Vishay Siliconix

    		 4,540 -
    RFQ
    		SI7190ADP-T1-RE3

    Datenblatt

         		ThunderFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 4.3A (Ta), 14.4A (Tc) 7.5V, 10V 102mOhm @ 4.3A, 10V 4V @ 250µA 22.4 nC @ 10 V ±20V 860 pF @ 100 V - 5W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    PHB45NQ10T,118

    PHB45NQ10T,118

    MOSFET N-CH 100V 47A D2PAK

    Nexperia USA Inc.

    		 3,378 -
    RFQ
    		PHB45NQ10T,118

    Datenblatt

         		TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 10V 25mOhm @ 25A, 10V 4V @ 1mA 61 nC @ 10 V ±20V 2600 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    BSC120N12LSGATMA1

    BSC120N12LSGATMA1

    TRENCH >=100V PG-TDSON-8

    Infineon Technologies

    		 2,427 -
    RFQ
    		BSC120N12LSGATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 10A (Ta), 68A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 2.4V @ 72µA 51 nC @ 10 V ±20V 4900 pF @ 60 V - 114W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8
    SI7464DP-T1-E3

    SI7464DP-T1-E3

    MOSFET N-CH 200V 1.8A PPAK SO-8

    Vishay Siliconix

    		 2,034 -
    RFQ
    		SI7464DP-T1-E3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 1.8A (Ta) 6V, 10V 240mOhm @ 2.8A, 10V 4V @ 250µA 18 nC @ 10 V ±20V - - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    STB60NF06T4

    STB60NF06T4

    MOSFET N-CH 60V 60A D2PAK

    STMicroelectronics

    		 1,683 -
    RFQ
    		STB60NF06T4

    Datenblatt

         		STripFET™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 16mOhm @ 30A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 1810 pF @ 25 V - 110W (Tc) -65°C ~ 175°C (TJ) - - Surface Mount D2PAK
    STF10N95K5

    STF10N95K5

    MOSFET N-CH 950V 8A TO220FP

    STMicroelectronics

    		 1,073 -
    RFQ
    		STF10N95K5

    Datenblatt

         		SuperMESH5™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 950 V 8A (Tc) 10V 800mOhm @ 4A, 10V 5V @ 100µA 22 nC @ 10 V ±30V 630 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    FDP3672

    FDP3672

    MOSFET N-CH 105V 5.9A/41A TO220

    onsemi

    		 312 -
    RFQ
    		FDP3672

    Datenblatt

         		PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 105 V 5.9A (Ta), 41A (Tc) 6V, 10V 33mOhm @ 41A, 10V 4V @ 250µA 37 nC @ 10 V ±20V 1670 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    MCB85N06Y-TP

    MCB85N06Y-TP

    MOSFET N-CH 60V 85A D2PAK

    Micro Commercial Co

    		 25,637 -
    RFQ
    		MCB85N06Y-TP

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 85A (Tc) 10V 13mOhm @ 30A, 10V 2.4V @ 250µA 36 nC @ 10 V ±20V 2498 pF @ 25 V - 85W -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    SI7892BDP-T1-E3

    SI7892BDP-T1-E3

    MOSFET N-CH 30V 15A PPAK SO-8

    Vishay Siliconix

    		 5,556 -
    RFQ
    		SI7892BDP-T1-E3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 4.2mOhm @ 25A, 10V 3V @ 250µA 40 nC @ 4.5 V ±20V 3775 pF @ 15 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    IPB65R660CFDAATMA1

    IPB65R660CFDAATMA1

    MOSFET N-CH 650V 6A D2PAK

    Infineon Technologies

    		 4,016 -
    RFQ
    		IPB65R660CFDAATMA1

    Datenblatt

         		CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 3.2A, 10V 4.5V @ 200µA 20 nC @ 10 V ±20V 543 pF @ 100 V - 62.5W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3
    IPB054N08N3GATMA1

    IPB054N08N3GATMA1

    MOSFET N-CH 80V 80A D2PAK

    Infineon Technologies

    		 3,633 -
    RFQ
    		IPB054N08N3GATMA1

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 5.4mOhm @ 80A, 10V 3.5V @ 90µA 69 nC @ 10 V ±20V 4750 pF @ 40 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    IRF100B202

    IRF100B202

    MOSFET N-CH 100V 97A TO220AB

    Infineon Technologies

    		 1,919 -
    RFQ
    		IRF100B202

    Datenblatt

         		HEXFET®, StrongIRFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 8.6mOhm @ 58A, 10V 4V @ 150µA 116 nC @ 10 V ±20V 4476 pF @ 50 V - 221W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    SI7892BDP-T1-GE3

    SI7892BDP-T1-GE3

    MOSFET N-CH 30V 15A PPAK SO-8

    Vishay Siliconix

    		 1,251 -
    RFQ
    		SI7892BDP-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 4.2mOhm @ 25A, 10V 3V @ 250µA 40 nC @ 4.5 V ±20V 3775 pF @ 15 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    BSZ014NE2LS5IFATMA1

    BSZ014NE2LS5IFATMA1

    MOSFET N-CH 25V 31A/40A TSDSON

    Infineon Technologies

    		 26,690 -
    RFQ
    		BSZ014NE2LS5IFATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 31A (Ta), 40A (Tc) 4.5V, 10V 1.45mOhm @ 20A, 10V 2V @ 250µA 33 nC @ 10 V ±16V 2300 pF @ 12 V Schottky Diode (Body) 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSDSON-8-FL
    SI7434ADP-T1-RE3

    SI7434ADP-T1-RE3

    MOSFET N-CH 250V 3.7A/12.3A PPAK

    Vishay Siliconix

    		 5,853 -
    RFQ
    		SI7434ADP-T1-RE3

    Datenblatt

         		ThunderFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 3.7A (Ta), 12.3A (Tc) 7.5V, 10V 150mOhm @ 3.7A, 10V 4V @ 250µA 16.5 nC @ 10 V ±20V 600 pF @ 125 V - 5W (Ta), 54.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    XPW6R30ANB,L1XHQ

    XPW6R30ANB,L1XHQ

    MOSFET N-CH 100V 45A 8DSOP

    Toshiba Semiconductor and Storage

    		 5,290 -
    RFQ
    		XPW6R30ANB,L1XHQ

    Datenblatt

         		U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 45A (Ta) 6V, 10V 6.3mOhm @ 22.5A, 10V 3.5V @ 500µA 52 nC @ 10 V ±20V 3240 pF @ 10 V - 960mW (Ta), 132W (Tc) 175°C - - Surface Mount 8-DSOP Advance
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