FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
STD7N80K5

STD7N80K5

MOSFET N-CH 800V 6A DPAK

STMicroelectronics

11,891 -
RFQ
STD7N80K5

Datenblatt

SuperMESH5™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 1.2Ohm @ 3A, 10V 5V @ 100µA 13.4 nC @ 10 V ±30V 360 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
RJK1052DPB-00#J5

RJK1052DPB-00#J5

MOSFET N-CH 100V 20A LFPAK

Renesas Electronics Corporation

6,572 -
RFQ
RJK1052DPB-00#J5

Datenblatt

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Ta) 4.5V, 10V 20mOhm @ 10A, 10V - 29 nC @ 4.5 V ±20V 4160 pF @ 10 V - 55W (Tc) 150°C (TJ) - - Surface Mount LFPAK
ISC012N04NM6ATMA1

ISC012N04NM6ATMA1

TRENCH <= 40V PG-TDSON-8

Infineon Technologies

13,858 -
RFQ
ISC012N04NM6ATMA1

Datenblatt

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 36A (Ta), 232A (Tc) 6V, 10V 1.2mOhm @ 50A, 10V 2.8V @ 747µA 64 nC @ 10 V ±20V 4600 pF @ 20 V - 3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8 FL
SI4434ADY-T1-GE3

SI4434ADY-T1-GE3

MOSFET N-CH 250V 2.8A/4.1A 8SO

Vishay Siliconix

9,208 -
RFQ
SI4434ADY-T1-GE3

Datenblatt

ThunderFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 2.8A (Ta), 4.1A (Tc) 7.5V, 10V 150mOhm @ 2.8A, 10V 4V @ 250µA 16.5 nC @ 10 V ±20V 600 pF @ 125 V - 2.9W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF620SPBF

IRF620SPBF

MOSFET N-CH 200V 5.2A D2PAK

Vishay Siliconix

847 -
RFQ
IRF620SPBF

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFZ44PBF-BE3

IRFZ44PBF-BE3

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix

680 -
RFQ
IRFZ44PBF-BE3

Datenblatt

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IPP50R190CEXKSA1

IPP50R190CEXKSA1

MOSFET N-CH 500V 18.5A TO220-3

Infineon Technologies

495 -
RFQ
IPP50R190CEXKSA1

Datenblatt

CoolMOS™ CE TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 18.5A (Tc) 13V 190mOhm @ 6.2A, 13V 3.5V @ 510µA 47.2 nC @ 10 V ±20V 1137 pF @ 100 V - 127W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPA95R750P7XKSA1

IPA95R750P7XKSA1

MOSFET N-CH 950V 9A TO220

Infineon Technologies

429 -
RFQ
IPA95R750P7XKSA1

Datenblatt

CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 950 V 9A (Tc) 10V 750mOhm @ 4.5A, 10V 3.5V @ 220µA 23 nC @ 10 V ±20V 712 pF @ 400 V - 28W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPB018N06NF2SATMA1

IPB018N06NF2SATMA1

TRENCH 40<-<100V

Infineon Technologies

243 -
RFQ
IPB018N06NF2SATMA1

Datenblatt

StrongIRFET™2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 34A (Ta), 187A (Tc) 6V, 10V 1.8mOhm @ 100A, 10V 3.3V @ 129µA 162 nC @ 10 V ±20V 7300 pF @ 30 V - 3.8W (Ta), 188W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
IRF9640PBF-BE3

IRF9640PBF-BE3

MOSFET P-CH 200V 11A TO220AB

Vishay Siliconix

135 -
RFQ
IRF9640PBF-BE3

Datenblatt

- TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IXFQ20N50P3

IXFQ20N50P3

MOSFET N-CH 500V 20A TO3P

IXYS

294 -
RFQ
IXFQ20N50P3

Datenblatt

HiPerFET™, Polar3™ TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 300mOhm @ 10A, 10V 5V @ 1.5mA 36 nC @ 10 V ±30V 1800 pF @ 25 V - 380W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
RS3E130ATTB1

RS3E130ATTB1

PCH -30V -13A POWER MOSFET : RS3

Rohm Semiconductor

7,111 -
RFQ
RS3E130ATTB1

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 8.5mOhm @ 13A, 10V 2.5V @ 2mA 83 nC @ 10 V ±20V 3730 pF @ 15 V - 1.4W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
FDMC8360L

FDMC8360L

MOSFET N-CH 40V 27A/80A POWER33

onsemi

6,051 -
RFQ
FDMC8360L

Datenblatt

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 27A (Ta), 80A (Tc) 4.5V, 10V 2.1mOhm @ 27A, 10V 3V @ 250µA 80 nC @ 10 V ±20V 5795 pF @ 20 V - 2.3W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount Power33
STU6N95K5

STU6N95K5

MOSFET N-CH 950V 9A IPAK

STMicroelectronics

2,563 -
RFQ
STU6N95K5

Datenblatt

SuperMESH5™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 950 V 9A (Tc) 10V 1.25Ohm @ 3A, 10V 5V @ 100µA 13 nC @ 10 V ±30V 450 pF @ 100 V - 90W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
NTD5C632NLT4G

NTD5C632NLT4G

T6 60V LL DPAK

onsemi

2,225 -
RFQ
NTD5C632NLT4G

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 29A (Ta), 155A (Tc) 4.5V, 10V 2.5mOhm @ 50A, 10V 2.1V @ 250µA 34 nC @ 4.5 V ±20V 5700 pF @ 25 V - 4W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
BUK9Y4R8-60E,115

BUK9Y4R8-60E,115

MOSFET N-CH 60V 100A LFPAK56

Nexperia USA Inc.

14,699 -
RFQ
BUK9Y4R8-60E,115

Datenblatt

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 5V 4.1mOhm @ 25A, 10V 2.1V @ 1mA 50 nC @ 5 V ±10V 7853 pF @ 25 V - 238W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
FDD86326

FDD86326

MOSFET N-CH 80V 8A/37A DPAK

onsemi

9,450 -
RFQ
FDD86326

Datenblatt

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 8A (Ta), 37A (Tc) 6V, 10V 23mOhm @ 8A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 1035 pF @ 50 V - 3.1W (Ta), 62W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
IPB35N10S3L26ATMA1

IPB35N10S3L26ATMA1

MOSFET N-CH 100V 35A D2PAK

Infineon Technologies

3,411 -
RFQ
IPB35N10S3L26ATMA1

Datenblatt

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 4.5V, 10V 26.3mOhm @ 35A, 10V 2.4V @ 39µA 39 nC @ 10 V ±20V 2700 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3
FDB2572

FDB2572

MOSFET N-CH 150V 4A/29A TO263AB

onsemi

1,015 -
RFQ
FDB2572

Datenblatt

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Ta), 29A (Tc) 6V, 10V 54mOhm @ 9A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1770 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IPP015N04NF2SAKMA1

IPP015N04NF2SAKMA1

TRENCH PG-TO220-3

Infineon Technologies

797 -
RFQ
IPP015N04NF2SAKMA1

Datenblatt

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