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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    PSMN1R7-40YLDX

    PSMN1R7-40YLDX

    MOSFET N-CH 40V 200A LFPAK56

    Nexperia USA Inc.

    		 8,342 -
    RFQ
    		PSMN1R7-40YLDX

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 4.5V, 10V 1.8mOhm @ 25A, 10V 2.05V @ 1mA 109 nC @ 10 V ±20V 7966 pF @ 20 V Schottky Diode (Body) 194W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    FDMC86340

    FDMC86340

    MOSFET N-CH 80V 14A/48A POWER33

    onsemi

    		 5,281 -
    RFQ
    		FDMC86340

    Datenblatt

         		PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 14A (Ta), 48A (Tc) 8V, 10V 6.5mOhm @ 14A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 3885 pF @ 40 V - 2.3W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount Power33
    IRFR9024TRLPBF

    IRFR9024TRLPBF

    MOSFET P-CH 60V 8.8A DPAK

    Vishay Siliconix

    		 3,232 -
    RFQ
    		IRFR9024TRLPBF

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 8.8A (Tc) 10V 280mOhm @ 5.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    SQ4425EY-T1_BE3

    SQ4425EY-T1_BE3

    MOSFET P-CHANNEL 30V 18A 8SOIC

    Vishay Siliconix

    		 2,673 -
    RFQ
    		SQ4425EY-T1_BE3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 18A (Tc) 4.5V, 10V 12mOhm @ 13A, 10V 2.5V @ 250µA 50 nC @ 4.5 V ±20V 3630 pF @ 25 V - 6.8W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    VP2206N3-G-P003

    VP2206N3-G-P003

    MOSFET P-CH 60V 640MA TO92-3

    Microchip Technology

    		 2,228 -
    RFQ
    		VP2206N3-G-P003

    Datenblatt

         		- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 640mA (Tj) 5V, 10V 900mOhm @ 3.5A, 10V 3.5V @ 10mA - ±20V 450 pF @ 25 V - 740mW (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
    RS1E281BNTB1

    RS1E281BNTB1

    MOSFET N-CH 30V 28A/80A 8HSOP

    Rohm Semiconductor

    		 909 -
    RFQ
    		RS1E281BNTB1

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 80A (Tc) 4.5V, 10V 2.3mOhm @ 28A, 10V 2.5V @ 1mA 94 nC @ 10 V ±20V 5100 pF @ 15 V - 3W (Ta) 150°C (TJ) - - Surface Mount 8-HSOP
    IPB050N10NF2SATMA1

    IPB050N10NF2SATMA1

    TRENCH >=100V

    Infineon Technologies

    		 727 -
    RFQ
    		IPB050N10NF2SATMA1

    Datenblatt

         		StrongIRFET™ 2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 103A (Tc) 6V, 10V 5.05mOhm @ 60A, 10V 3.8V @ 85µA 76 nC @ 10 V ±20V 3600 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    IAUC120N04S6N010ATMA1

    IAUC120N04S6N010ATMA1

    MOSFET N-CH 40V 150A TDSON-8-34

    Infineon Technologies

    		 14,844 -
    RFQ
    		IAUC120N04S6N010ATMA1

    Datenblatt

         		OptiMOS™ 6 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 7V, 10V 1.03mOhm @ 60A, 10V 3V @ 90µA 108 nC @ 10 V ±20V 6878 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8-34
    IAUC120N04S6L009ATMA1

    IAUC120N04S6L009ATMA1

    MOSFET N-CH 40V 150A TDSON-8-34

    Infineon Technologies

    		 12,119 -
    RFQ
    		IAUC120N04S6L009ATMA1

    Datenblatt

         		OptiMOS™ 6 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 4.5V, 10V 960mOhm @ 60A, 10V 2V @ 90µA 128 nC @ 10 V ±16V 7806 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8-34
    BUK969R0-60E,118

    BUK969R0-60E,118

    MOSFET N-CH 60V 75A D2PAK

    Nexperia USA Inc.

    		 5,111 -
    RFQ
    		BUK969R0-60E,118

    Datenblatt

         		TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 5V 8mOhm @ 20A, 10V 2.1V @ 1mA 29.8 nC @ 5 V ±10V 4350 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
    IPD60R180P7ATMA1

    IPD60R180P7ATMA1

    MOSFET N-CH 600V 18A TO252-3

    Infineon Technologies

    		 4,537 -
    RFQ
    		IPD60R180P7ATMA1

    Datenblatt

         		CoolMOS™ P7 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    STB4NK60ZT4

    STB4NK60ZT4

    MOSFET N-CH 600V 4A D2PAK

    STMicroelectronics

    		 4,327 -
    RFQ
    		STB4NK60ZT4

    Datenblatt

         		SuperMESH™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2Ohm @ 2A, 10V 4.5V @ 50µA 26 nC @ 10 V ±30V 510 pF @ 25 V - 70W (Tc) 150°C (TJ) - - Surface Mount D2PAK
    SI4896DY-T1-GE3

    SI4896DY-T1-GE3

    MOSFET N-CH 80V 6.7A 8SO

    Vishay Siliconix

    		 3,852 -
    RFQ
    		SI4896DY-T1-GE3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 6.7A (Ta) 6V, 10V 16.5mOhm @ 10A, 10V 2V @ 250µA (Min) 41 nC @ 10 V ±20V - - 1.56W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    STP2NK90Z

    STP2NK90Z

    MOSFET N-CH 900V 2.1A TO220AB

    STMicroelectronics

    		 577 -
    RFQ
    		STP2NK90Z

    Datenblatt

         		SuperMESH™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 900 V 2.1A (Tc) 10V 6.5Ohm @ 1.05A, 10V 4.5V @ 50µA 27 nC @ 10 V ±30V 485 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    IRFU430APBF

    IRFU430APBF

    MOSFET N-CH 500V 5A TO251AA

    Vishay Siliconix

    		 391 -
    RFQ
    		IRFU430APBF

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.7Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 490 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
    IPB043N10NF2SATMA1

    IPB043N10NF2SATMA1

    AUTOMOTIVE MOSFET

    Infineon Technologies

    		 194 -
    RFQ
    		IPB043N10NF2SATMA1

    Datenblatt

         		StrongIRFET™ 2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 21A (Ta), 135A (Tc) 6V, 10V 4.35mOhm @ 80A, 10V 3.8V @ 93µA 85 nC @ 10 V ±20V 4000 pF @ 50 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    RD3U080CNTL1

    RD3U080CNTL1

    MOSFET N-CH 250V 8A TO252

    Rohm Semiconductor

    		 22,477 -
    RFQ
    		RD3U080CNTL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 8A (Tc) 10V 300mOhm @ 4A, 10V 5V @ 1mA 25 nC @ 10 V ±30V 1440 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
    MCB130N10YA-TP

    MCB130N10YA-TP

    N-CHANNEL MOSFET, D2-PAK

    Micro Commercial Co

    		 6,210 -
    RFQ

    -

    		 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 4.6mOhm @ 20A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 4600 pF @ 50 V - 260W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    AOB240L

    AOB240L

    MOSFET N-CH 40V 20A/105A TO263

    Alpha & Omega Semiconductor Inc.

    		 4,214 -
    RFQ
    		AOB240L

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 20A (Ta), 105A (Tc) 4.5V, 10V 2.6mOhm @ 20A, 10V 2.2V @ 250µA 72 nC @ 10 V ±20V 3510 pF @ 20 V - 1.9W (Ta), 176W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IPD040N08NF2SATMA1

    IPD040N08NF2SATMA1

    MOSFET

    Infineon Technologies

    		 3,249 -
    RFQ
    		IPD040N08NF2SATMA1

    Datenblatt

         		StrongIRFET™ 2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 20A (Ta), 129A (Tc) 6V, 10V 4mOhm @ 70A, 10V 3.8V @ 85µA 81 nC @ 10 V ±20V 3800 pF @ 40 V - 3W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
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