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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    BUK768R3-60E,118

    BUK768R3-60E,118

    MOSFET N-CH 60V 75A D2PAK

    Nexperia USA Inc.

    		 5,158 -
    RFQ
    		BUK768R3-60E,118

    Datenblatt

         		TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 8.3mOhm @ 20A, 10V 4V @ 1mA 43.1 nC @ 10 V ±20V 2920 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
    IPD60R280CFD7ATMA1

    IPD60R280CFD7ATMA1

    MOSFET N-CH 600V 9A TO252-3

    Infineon Technologies

    		 4,544 -
    RFQ
    		IPD60R280CFD7ATMA1

    Datenblatt

         		CoolMOS™ CFD7 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 280mOhm @ 3.6A, 10V 4.5V @ 180µA 18 nC @ 10 V ±20V 807 pF @ 400 V - 51W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    RCX300N20

    RCX300N20

    MOSFET N-CH 200V 30A TO220FM

    Rohm Semiconductor

    		 240 -
    RFQ
    		RCX300N20

    Datenblatt

         		- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 30A (Tc) 10V 80mOhm @ 15A, 10V 5V @ 1mA 60 nC @ 10 V ±30V 3200 pF @ 25 V - 2.23W (Ta), 40W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    SPD08N50C3ATMA1

    SPD08N50C3ATMA1

    MOSFET N-CH 500V 7.6A TO252-3

    Infineon Technologies

    		 12,119 -
    RFQ
    		SPD08N50C3ATMA1

    Datenblatt

         		CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    NTMFS034N15MC

    NTMFS034N15MC

    MOSFET N-CH 150V 6.1A/31A 8PQFN

    onsemi

    		 4,780 -
    RFQ
    		NTMFS034N15MC

    Datenblatt

         		PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 6.1A (Ta), 31A (Tc) - 31mOhm @ 13A, 10V 4.5V @ 70µA 12 nC @ 10 V ±20V 905 pF @ 75 V - 2.5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    BUK9Y8R5-80EX

    BUK9Y8R5-80EX

    MOSFET N-CH 80V 100A LFPAK56

    Nexperia USA Inc.

    		 4,357 -
    RFQ
    		BUK9Y8R5-80EX

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 5V 8mOhm @ 25A, 10V 2.1V @ 1mA 54.7 nC @ 5 V ±10V 8167 pF @ 25 V - 238W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    SIR182LDP-T1-RE3

    SIR182LDP-T1-RE3

    N-CHANNEL 60-V (D-S) MOSFET POWE

    Vishay Siliconix

    		 4,137 -
    RFQ
    		SIR182LDP-T1-RE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 31.7A (Ta), 130A (Tc) 4.5V, 10V 2.75mOhm @ 15A, 10V 2.4V @ 250µA 84 nC @ 10 V ±20V 3700 pF @ 30 V - 5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    SIHP15N80AEF-GE3

    SIHP15N80AEF-GE3

    EF SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 2,061 -
    RFQ
    		SIHP15N80AEF-GE3

    Datenblatt

         		EF TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 350mOhm @ 6.5A, 10V 4V @ 250µA 54 nC @ 10 V ±30V 1128 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    IRF730APBF-BE3

    IRF730APBF-BE3

    MOSFET N-CH 400V 5.5A TO220AB

    Vishay Siliconix

    		 984 -
    RFQ
    		IRF730APBF-BE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) - 1Ohm @ 3.3A, 10V 4.5V @ 250µA 22 nC @ 10 V ±30V 600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    IRF9Z20PBF

    IRF9Z20PBF

    MOSFET P-CH 50V 9.7A TO220AB

    Vishay Siliconix

    		 532 -
    RFQ
    		IRF9Z20PBF

    Datenblatt

         		- TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 50 V 9.7A (Tc) 10V 280mOhm @ 5.6A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 480 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    IPA60R380C6XKSA1

    IPA60R380C6XKSA1

    MOSFET N-CH 600V 10.6A TO220-FP

    Infineon Technologies

    		 484 -
    RFQ
    		IPA60R380C6XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 320µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    IRF730APBF

    IRF730APBF

    MOSFET N-CH 400V 5.5A TO220AB

    Vishay Siliconix

    		 329 -
    RFQ
    		IRF730APBF

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4.5V @ 250µA 22 nC @ 10 V ±30V 600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    AOTF190A60CL

    AOTF190A60CL

    MOSFET N-CH 600V 20A TO220F

    Alpha & Omega Semiconductor Inc.

    		 117 -
    RFQ
    		AOTF190A60CL

    Datenblatt

         		aMOS5™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tj) 10V 190mOhm @ 7.6A, 10V 4.6V @ 250µA 34 nC @ 10 V ±20V 1935 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
    FCD600N60Z

    FCD600N60Z

    MOSFET N-CH 600V 7.4A DPAK

    onsemi

    		 15,490 -
    RFQ
    		FCD600N60Z

    Datenblatt

         		SuperFET® II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 7.4A (Tc) 10V 600mOhm @ 3.7A, 10V 3.5V @ 250µA 26 nC @ 10 V ±20V 1120 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    TPH1R005PL,L1Q

    TPH1R005PL,L1Q

    MOSFET N-CH 45V 150A 8SOP

    Toshiba Semiconductor and Storage

    		 7,777 -
    RFQ
    		TPH1R005PL,L1Q

    Datenblatt

         		U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45 V 150A (Tc) 4.5V, 10V 1.04mOhm @ 50A, 10V 2.4V @ 1mA 99 nC @ 10 V ±20V 9600 pF @ 22.5 V - 960mW (Ta), 170W (Tc) 175°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
    IPD90N08S405ATMA1

    IPD90N08S405ATMA1

    MOSFET N-CH 80V 90A TO252-3

    Infineon Technologies

    		 6,942 -
    RFQ
    		IPD90N08S405ATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 90A (Tc) 10V 5.3mOhm @ 90A, 10V 4V @ 90µA 68 nC @ 10 V ±20V 4800 pF @ 25 V - 144W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-313
    RD3S075CNTL1

    RD3S075CNTL1

    MOSFET N-CH 190V 7.5A TO252

    Rohm Semiconductor

    		 3,225 -
    RFQ
    		RD3S075CNTL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 190 V 7.5A (Tc) 4V, 10V 336mOhm @ 3.8A, 10V 2.5V @ 1mA 30 nC @ 10 V ±20V 1100 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
    SIR180ADP-T1-RE3

    SIR180ADP-T1-RE3

    MOSFET N-CH 60V PPAK SO-8

    Vishay Siliconix

    		 3,111 -
    RFQ
    		SIR180ADP-T1-RE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Ta), 137A (Tc) 7.5V, 10V 2.2mOhm @ 10A, 10V 3.6V @ 250µA 70 nC @ 10 V ±20V 3280 pF @ 30 V - 5.4W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    IRFI530GPBF

    IRFI530GPBF

    MOSFET N-CH 100V 9.7A TO220-3

    Vishay Siliconix

    		 996 -
    RFQ
    		IRFI530GPBF

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 10V 160mOhm @ 5.8A, 10V 4V @ 250µA 33 nC @ 10 V ±20V 670 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    IPP114N12N3GXKSA1

    IPP114N12N3GXKSA1

    MOSFET N-CH 120V 75A TO220-3

    Infineon Technologies

    		 406 -
    RFQ
    		IPP114N12N3GXKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 75A (Tc) 10V 11.4mOhm @ 75A, 10V 4V @ 83µA 65 nC @ 10 V ±20V 4310 pF @ 60 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
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