FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
SUD50N03-12P-GE3

SUD50N03-12P-GE3

MOSFET N-CH 30V 16.8A TO252

Vishay Siliconix

6,444 -
RFQ
SUD50N03-12P-GE3

Datenblatt

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16.8A (Ta) 4.5V, 10V 17mOhm @ 20A, 10V 3V @ 250µA 42 nC @ 10 V ±20V 1600 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
SUM120N04-1M7L-GE3

SUM120N04-1M7L-GE3

MOSFET N-CH 40V 120A TO263

Vishay Siliconix

7,451 -
RFQ
SUM120N04-1M7L-GE3

Datenblatt

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 17mOhm @ 30A, 10V 2.5V @ 250µA 285 nC @ 10 V ±20V 11685 pF @ 20 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
SUM25P10-138-E3

SUM25P10-138-E3

MOSFET N-CH 100V 16.7A TO263

Vishay Siliconix

7,921 -
RFQ
SUM25P10-138-E3

Datenblatt

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 16.7A (Tc) 6V, 10V 13.8mOhm @ 6A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 2110 pF @ 25 V - 3.75W (Ta), 88.2W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
SUM50P10-42-E3

SUM50P10-42-E3

MOSFET N-CH 100V 36A TO263

Vishay Siliconix

7,256 -
RFQ
SUM50P10-42-E3

Datenblatt

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 4.5V, 10V 4.2mOhm @ 14A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 4600 pF @ 50 V - 18.8W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SUP25P10-138-GE3

SUP25P10-138-GE3

MOSFET N-CH 100V 16.3A TO220AB

Vishay Siliconix

2,516 -
RFQ
SUP25P10-138-GE3

Datenblatt

TrenchFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 16.3A (Tc) 6V, 10V 13.8mOhm @ 6A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 2100 pF @ 50 V - 3.1W (Ta), 73.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SPD04N60S5BTMA1

SPD04N60S5BTMA1

MOSFET N-CH 600V 4.5A TO252-3

Infineon Technologies

4,812 -
RFQ
SPD04N60S5BTMA1

Datenblatt

CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 5.5V @ 200µA 22.9 nC @ 10 V ±20V 580 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPI100N04S303MATMA1

IPI100N04S303MATMA1

MOSFET N-CH TO262-3

Infineon Technologies

6,513 -
RFQ
IPI100N04S303MATMA1

Datenblatt

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPP90N06S4L04AKSA2

IPP90N06S4L04AKSA2

MOSFET N-CH 60V 90A TO220-3

Infineon Technologies

8,131 -
RFQ
IPP90N06S4L04AKSA2

Datenblatt

OptiMOS™ TO-220-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 3.7mOhm @ 90A, 10V 2.2V @ 90µA 170 nC @ 10 V ±16V 13000 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3-1
IPI100N04S303MATMA2

IPI100N04S303MATMA2

MOSFET N-CH TO262-3

Infineon Technologies

3,116 -
RFQ
IPI100N04S303MATMA2

Datenblatt

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
IPP80N06S4L05AKSA2

IPP80N06S4L05AKSA2

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies

5,185 -
RFQ
IPP80N06S4L05AKSA2

Datenblatt

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 8.5mOhm @ 40A, 4.5V 2.2V @ 60µA 110 nC @ 10 V ±16V 8180 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3-1
IPP80P04P405AKSA1

IPP80P04P405AKSA1

MOSFET P-CH 40V 80A TO220-3

Infineon Technologies

6,580 -
RFQ
IPP80P04P405AKSA1

Datenblatt

OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 4V @ 250µA 151 nC @ 10 V ±20V 10300 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3-1
94-2355PBF

94-2355PBF

MOSFET N-CH 100V TO-220AB

Infineon Technologies

7,345 -
RFQ
94-2355PBF

Datenblatt

- - Tube Obsolete - - - - 4V, 10V - - - ±16V - - - - - - - -
94-2503PBF

94-2503PBF

MOSFET N-CH 100V 57A D2PAK

Infineon Technologies

6,986 -
RFQ
94-2503PBF

Datenblatt

- - Tube Obsolete - - - - - - - - - - - - - - - - -
94-4849PBF

94-4849PBF

MOSFET P-CH 55V 11A DPAK

Infineon Technologies

2,897 -
RFQ
94-4849PBF

Datenblatt

- - Tube Obsolete - - - - - - - - - - - - - - - - -
IRFC4310EF

IRFC4310EF

MOSFET N-CH 100V DIE ON FILM

Infineon Technologies

7,525 -
RFQ
IRFC4310EF

Datenblatt

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
IPB45N06S409ATMA2

IPB45N06S409ATMA2

MOSFET N-CH 60V 45A TO263-3

Infineon Technologies

2,935 -
RFQ
IPB45N06S409ATMA2

Datenblatt

OptiMOS™ T2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 10V 9.4mOhm @ 45A, 10V 4V @ 34µA 47 nC @ 10 V ±20V 3785 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3-2
IPB80N06S4L05ATMA2

IPB80N06S4L05ATMA2

MOSFET N-CH 60V 80A TO263-3

Infineon Technologies

6,099 -
RFQ
IPB80N06S4L05ATMA2

Datenblatt

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 5.1mOhm @ 80A, 10V 2.2V @ 60µA 110 nC @ 10 V ±16V 8180 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3-2
IPP80N06S407AKSA2

IPP80N06S407AKSA2

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies

3,690 -
RFQ
IPP80N06S407AKSA2

Datenblatt

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 40µA 56 nC @ 10 V ±20V 4500 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3-1
FDD86580-F085

FDD86580-F085

MOSFET N-CH 60V 50A DPAK

onsemi

6,156 -
RFQ
FDD86580-F085

Datenblatt

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 19mOhm @ 50A, 10V 4.2V @ 250µA 30 nC @ 10 V ±20V 1430 pF @ 30 V - 75W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
NTMFS4C290NT1G

NTMFS4C290NT1G

MOSFET N-CH 30V 8.2A/46A 5DFN

onsemi

9,710 -
RFQ
NTMFS4C290NT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.2A (Ta), 46A (Tc) 4.5V, 10V 6.95mOhm @ 30A, 10V 2.2V @ 250µA 2.8 nC @ 4.5 V ±20V 987 pF @ 15 V - 750mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
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