FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IPB065N10N3GATMA1

IPB065N10N3GATMA1

MOSFET N-CH 100V 80A D2PAK

Infineon Technologies

4,885 -
RFQ
IPB065N10N3GATMA1

Datenblatt

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 6.5mOhm @ 80A, 10V 3.5V @ 90µA 64 nC @ 10 V ±20V 4910 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
IPB120N04S404ATMA1

IPB120N04S404ATMA1

MOSFET N-CH 40V 120A D2PAK

Infineon Technologies

9,311 -
RFQ
IPB120N04S404ATMA1

Datenblatt

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 3.6mOhm @ 100A, 10V 4V @ 40µA 55 nC @ 10 V ±20V 4100 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3
IPB120P04P404ATMA1

IPB120P04P404ATMA1

MOSFET P-CH 40V 120A D2PAK

Infineon Technologies

5,900 -
RFQ
IPB120P04P404ATMA1

Datenblatt

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 3.5mOhm @ 100A, 10V 4V @ 340µA 205 nC @ 10 V ±20V 14790 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3
IPB140N08S404ATMA1

IPB140N08S404ATMA1

MOSFET N-CH 80V 140A TO263-7

Infineon Technologies

7,567 -
RFQ
IPB140N08S404ATMA1

Datenblatt

OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80 V 140A (Tc) 10V 4.2mOhm @ 100A, 10V 4V @ 100µA 80 nC @ 10 V ±20V 5500 pF @ 25 V - 161W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-3
IPB160N08S403ATMA1

IPB160N08S403ATMA1

MOSFET N-CH 80V 160A TO263-7

Infineon Technologies

2,135 -
RFQ
IPB160N08S403ATMA1

Datenblatt

OptiMOS™ T2 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80 V 160A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 150µA 112 nC @ 10 V ±20V 7750 pF @ 25 V - 208W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-3
IPB45P03P4L11ATMA1

IPB45P03P4L11ATMA1

MOSFET P-CH 30V 45A TO263-3

Infineon Technologies

9,975 -
RFQ
IPB45P03P4L11ATMA1

Datenblatt

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 4.5V, 10V 10.8mOhm @ 45A, 10V 2V @ 85µA 55 nC @ 10 V +5V, -16V 3770 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3-2
IPB60R330P6ATMA1

IPB60R330P6ATMA1

MOSFET N-CH 600V 12A D2PAK

Infineon Technologies

9,469 -
RFQ
IPB60R330P6ATMA1

Datenblatt

CoolMOS™ P6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 330mOhm @ 4.5A, 10V 4.5V @ 370µA 22 nC @ 10 V ±20V 1010 pF @ 100 V - 93W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IPB60R600P6ATMA1

IPB60R600P6ATMA1

MOSFET N-CH 600V 7.3A D2PAK

Infineon Technologies

7,422 -
RFQ
IPB60R600P6ATMA1

Datenblatt

CoolMOS™ P6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 4.5V @ 200µA 12 nC @ 10 V ±20V 557 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IPB65R065C7ATMA1

IPB65R065C7ATMA1

MOSFET N-CH 600V 7.3A D2PAK

Infineon Technologies

6,704 -
RFQ
IPB65R065C7ATMA1

Datenblatt

CoolMOS™ P6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 4.5V @ 200µA 12 nC @ 10 V ±20V 557 pF @ 100 V - 171W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IPB65R095C7ATMA1

IPB65R095C7ATMA1

MOSFET N-CH 650V 24A D2PAK

Infineon Technologies

9,256 -
RFQ
IPB65R095C7ATMA1

Datenblatt

CoolMOS™ C7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 95mOhm @ 11.8A, 10V 4V @ 590µA 45 nC @ 10 V ±20V 2140 pF @ 400 V - 128W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IPB65R125C7ATMA1

IPB65R125C7ATMA1

MOSFET N-CH 650V 18A D2PAK

Infineon Technologies

8,166 -
RFQ
IPB65R125C7ATMA1

Datenblatt

CoolMOS™ C7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 650 V 18A (Ta) 10V 125mOhm @ 8.9A, 10V 4V @ 440µA 35 nC @ 10 V ±20V 1670 pF @ 400 V - 101W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IPB65R190C7ATMA1

IPB65R190C7ATMA1

MOSFET N-CH 650V 13A D2PAK

Infineon Technologies

3,062 -
RFQ
IPB65R190C7ATMA1

Datenblatt

CoolMOS™ C7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 650 V 13A (Tc) 10V 190mOhm @ 5.7A, 10V 4V @ 290µA 23 nC @ 10 V ±20V 1150 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IPB65R280E6ATMA1

IPB65R280E6ATMA1

MOSFET N-CH 650V 13.8A D2PAK

Infineon Technologies

4,815 -
RFQ
IPB65R280E6ATMA1

Datenblatt

CoolMOS™ E6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 650 V 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V 3.5V @ 440µA 45 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IPB80R290C3AATMA1

IPB80R290C3AATMA1

MOSFET P-CH TO263-3

Infineon Technologies

4,887 -
RFQ
IPB80R290C3AATMA1

Datenblatt

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
IPC100N04S402ATMA1

IPC100N04S402ATMA1

MOSFET N-CH 40V 100A 8TDSON

Infineon Technologies

7,989 -
RFQ
IPC100N04S402ATMA1

Datenblatt

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.4mOhm @ 50A, 10V 4V @ 80µA 105 nC @ 10 V ±20V 8100 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-23
IPD65R650CEATMA1

IPD65R650CEATMA1

MOSFET N-CH 650V 10.1A TO252-3

Infineon Technologies

7,288 -
RFQ
IPD65R650CEATMA1

Datenblatt

CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 10.1A (Tc) 10V 650mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 86W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPD85P04P407ATMA1

IPD85P04P407ATMA1

MOSFET P-CH 40V 85A TO252-3

Infineon Technologies

2,472 -
RFQ
IPD85P04P407ATMA1

Datenblatt

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) 10V 7.3mOhm @ 85A, 10V 4V @ 150µA 89 nC @ 10 V ±20V 6085 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-313
IPI120N08S403AKSA1

IPI120N08S403AKSA1

MOSFET N-CH 80V 120A TO262-3

Infineon Technologies

4,497 -
RFQ
IPI120N08S403AKSA1

Datenblatt

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 2.8mOhm @ 100A, 10V 4V @ 223µA 167 nC @ 10 V ±20V 11550 pF @ 25 V - 278W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO262-3-1
IPI120N08S404AKSA1

IPI120N08S404AKSA1

MOSFET N-CH 80V 120A TO262-3

Infineon Technologies

5,070 -
RFQ
IPI120N08S404AKSA1

Datenblatt

OptiMOS™ T2 TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 4.4mOhm @ 100A, 10V 4V @ 120µA 95 nC @ 10 V ±20V 6450 pF @ 25 V - 179W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO262-3-1
IPI120N10S403AKSA1

IPI120N10S403AKSA1

MOSFET N-CH 100V 120A TO262-3

Infineon Technologies

9,857 -
RFQ
IPI120N10S403AKSA1

Datenblatt

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 3.9mOhm @ 100A, 10V 3.5V @ 180µA 140 nC @ 10 V ±20V 10120 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO262-3-1
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