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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NTLUS3A39PZCTBG

    NTLUS3A39PZCTBG

    MOSFET P-CH 20V 3.4A 6UDFN

    onsemi

    		 5,728 -
    RFQ
    		NTLUS3A39PZCTBG

    Datenblatt

         		µCool™ 6-PowerUFDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.4A (Ta) 1.5V, 4.5V 39mOhm @ 4A, 4.5V 1V @ 250µA 10.4 nC @ 4.5 V ±8V 920 pF @ 15 V - 600mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-UDFN (1.6x1.6)
    NTMFS5C404NLTWFT1G

    NTMFS5C404NLTWFT1G

    MOSFET N-CH 40V 5DFN

    onsemi

    		 2,984 -
    RFQ
    		NTMFS5C404NLTWFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 370A (Tc) 4.5V, 10V 0.75mOhm @ 50A, 10V 2V @ 250µA 181 nC @ 10 V ±20V 12168 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    NTMFS5C410NLTWFT1G

    NTMFS5C410NLTWFT1G

    MOSFET N-CH 40V 50A/330A 5DFN

    onsemi

    		 3,735 -
    RFQ
    		NTMFS5C410NLTWFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Ta), 330A (Tc) 4.5V, 10V 0.9mOhm @ 50A, 10V 2V @ 250µA 143 nC @ 10 V ±20V 8862 pF @ 25 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    NVTFS5824NLTWG

    NVTFS5824NLTWG

    MOSFET N-CH 60V 20A 8WDFN

    onsemi

    		 7,725 -
    RFQ
    		NVTFS5824NLTWG

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 37A (Tc) 4.5V, 10V 20.5mOhm @ 10A, 10V 2.5V @ 250µA 16 nC @ 10 V ±20V 850 pF @ 25 V - 3.2W (Ta), 57W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
    NVTFS5824NLWFTWG

    NVTFS5824NLWFTWG

    MOSFET N-CH 60V 20A 8WDFN

    onsemi

    		 9,421 -
    RFQ
    		NVTFS5824NLWFTWG

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 37A (Tc) 4.5V, 10V 20.5mOhm @ 10A, 10V 2.5V @ 250µA 16 nC @ 10 V ±20V 850 pF @ 25 V - 3.2W (Ta), 57W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
    IPI030N10N3GXKSA1

    IPI030N10N3GXKSA1

    MOSFET N-CH 100V 100A TO262-3

    Infineon Technologies

    		 5,932 -
    RFQ
    		IPI030N10N3GXKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 3mOhm @ 100A, 10V 3.5V @ 275µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI037N08N3GXKSA1

    IPI037N08N3GXKSA1

    MOSFET N-CH 80V 100A TO262-3

    Infineon Technologies

    		 7,395 -
    RFQ
    		IPI037N08N3GXKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 3.75mOhm @ 100A, 10V 3.5V @ 155µA 117 nC @ 10 V ±20V 8110 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    FCH125N60E

    FCH125N60E

    MOSFET N-CH 600V 29A TO247-3

    onsemi

    		 9,181 -
    RFQ
    		FCH125N60E

    Datenblatt

         		SuperFET® II TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 14.5A, 10V 3.5V @ 250µA 95 nC @ 10 V ±20V 2990 pF @ 380 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    FCP290N80

    FCP290N80

    MOSFET N-CH 800V 17A TO220-3

    onsemi

    		 5,719 -
    RFQ
    		FCP290N80

    Datenblatt

         		SuperFET® II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 8.5A, 10V 4.5V @ 1.7mA 75 nC @ 10 V ±20V 3205 pF @ 100 V - 212W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    BSL303SPEH6327XTSA1

    BSL303SPEH6327XTSA1

    MOSFET P-CH 30V 6.3A TSOP-6

    Infineon Technologies

    		 7,053 -
    RFQ
    		BSL303SPEH6327XTSA1

    Datenblatt

         		OptiMOS™ SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 6.3A (Ta) 4.5V, 10V 33mOhm @ 6.3A, 10V 2V @ 30µA 20.9 nC @ 10 V ±20V 1401 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSOP6-6
    BSL305SPEH6327XTSA1

    BSL305SPEH6327XTSA1

    MOSFET P-CH 30V 5.3A TSOP-6

    Infineon Technologies

    		 8,111 -
    RFQ
    		BSL305SPEH6327XTSA1

    Datenblatt

         		OptiMOS™ SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 5.3A (Ta) 4.5V, 10V 45mOhm @ 5.3A, 10V 2V @ 20µA 14 nC @ 10 V ±20V 939 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSOP6-6
    IPAW60R190CEXKSA1

    IPAW60R190CEXKSA1

    MOSFET N-CH 600V 26.7A TO220

    Infineon Technologies

    		 9,393 -
    RFQ
    		IPAW60R190CEXKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 26.7A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 34W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    IPD60R650CEBTMA1

    IPD60R650CEBTMA1

    MOSFET N-CH 600V 7A TO252-3

    Infineon Technologies

    		 4,636 -
    RFQ
    		IPD60R650CEBTMA1

    Datenblatt

         		CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 650mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 82W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    IPD70R2K0CEAUMA1

    IPD70R2K0CEAUMA1

    MOSFET N-CH 700V 4A TO252-3

    Infineon Technologies

    		 8,998 -
    RFQ
    		IPD70R2K0CEAUMA1

    Datenblatt

         		CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 2Ohm @ 1A, 10V 3.5V @ 70µA 7.8 nC @ 10 V ±20V 163 pF @ 100 V - 42W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    IPD70R600CEAUMA1

    IPD70R600CEAUMA1

    MOSFET N-CH 700V 10.5A TO252-3

    Infineon Technologies

    		 5,083 -
    RFQ
    		IPD70R600CEAUMA1

    Datenblatt

         		CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 700 V 10.5A (Tc) 10V 600mOhm @ 1A, 10V 3.5V @ 210µA 22 nC @ 10 V ±20V 474 pF @ 100 V - 86W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    IPS70R600CEAKMA1

    IPS70R600CEAKMA1

    MOSFET N-CH 700V 10.5A TO251-3

    Infineon Technologies

    		 4,423 -
    RFQ
    		IPS70R600CEAKMA1

    Datenblatt

         		CoolMOS™ TO-251-3 Stub Leads, IPAK Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 700 V 10.5A (Tc) 10V 600mOhm @ 1A, 10V 3.5V @ 210µA 22 nC @ 10 V ±20V 474 pF @ 100 V - 86W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-11
    IPU50R2K0CEAKMA1

    IPU50R2K0CEAKMA1

    MOSFET N-CH 500V 2.4A TO251-3

    Infineon Technologies

    		 4,866 -
    RFQ
    		IPU50R2K0CEAKMA1

    Datenblatt

         		CoolMOS™ CE TO-251-3 Short Leads, IPAK, TO-251AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 13V 2Ohm @ 600mA, 13V 3.5V @ 50µA 6 nC @ 10 V ±20V 124 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    IPU50R3K0CEAKMA1

    IPU50R3K0CEAKMA1

    MOSFET N-CH 500V 1.7A TO251-3

    Infineon Technologies

    		 9,061 -
    RFQ
    		IPU50R3K0CEAKMA1

    Datenblatt

         		CoolMOS™ CE TO-251-3 Short Leads, IPAK, TO-251AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 500 V 1.7A (Tc) 13V 3Ohm @ 400mA, 13V 3.5V @ 30µA 4.3 nC @ 10 V ±20V 84 pF @ 100 V - 26W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    IPU50R950CEAKMA2

    IPU50R950CEAKMA2

    MOSFET N-CH 500V 4.3A TO251-3

    Infineon Technologies

    		 4,709 -
    RFQ
    		IPU50R950CEAKMA2

    Datenblatt

         		CoolMOS™ CE TO-251-3 Short Leads, IPAK, TO-251AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 500 V 4.3A (Tc) 13V 950mOhm @ 1.2A, 13V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 231 pF @ 100 V - 53W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    IPP50R350CPHKSA1

    IPP50R350CPHKSA1

    MOSFET N-CH 500V 10A TO220-3

    Infineon Technologies

    		 2,363 -
    RFQ
    		IPP50R350CPHKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 350mOhm @ 5.6A, 10V 3.5V @ 370µA 25 nC @ 10 V ±20V 1020 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
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