FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IPI120P04P4L03AKSA1

IPI120P04P4L03AKSA1

MOSFET P-CH 40V 120A TO262-3

Infineon Technologies

8,811 -
RFQ
IPI120P04P4L03AKSA1

Datenblatt

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3.4mOhm @ 100A, 10V 2.2V @ 340µA 234 nC @ 10 V ±16V 15000 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO262-3-1
IPI65R280E6XKSA1

IPI65R280E6XKSA1

MOSFET N-CH 650V 13.8A TO262-3

Infineon Technologies

9,829 -
RFQ
IPI65R280E6XKSA1

Datenblatt

CoolMOS™ E6 TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 650 V 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V 3.5V @ 440µA 45 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3-1
IPI80P03P405AKSA1

IPI80P03P405AKSA1

MOSFET P-CH 30V 80A TO262-3

Infineon Technologies

4,711 -
RFQ
IPI80P03P405AKSA1

Datenblatt

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 10V 5mOhm @ 80A, 10V 4V @ 253µA 130 nC @ 10 V ±20V 10300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO262-3-1
IPI80P04P405AKSA1

IPI80P04P405AKSA1

MOSFET P-CH 40V 80A TO262-3

Infineon Technologies

8,067 -
RFQ
IPI80P04P405AKSA1

Datenblatt

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 4V @ 250µA 151 nC @ 10 V ±20V 10300 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO262-3-1
IPI80P04P4L04AKSA1

IPI80P04P4L04AKSA1

MOSFET P-CH 40V 80A TO262-3

Infineon Technologies

8,204 -
RFQ
IPI80P04P4L04AKSA1

Datenblatt

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 4.7mOhm @ 80A, 10V 2.2V @ 250µA 176 nC @ 10 V +5V, -16V 3800 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO262-3-1
IPL65R165CFDAUMA1

IPL65R165CFDAUMA1

MOSFET N-CH 650V 21.3A 4VSON

Infineon Technologies

6,819 -
RFQ
IPL65R165CFDAUMA1

Datenblatt

CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 21.3A (Tc) 10V 165mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPL65R190E6AUMA1

IPL65R190E6AUMA1

MOSFET N-CH 650V 20.2A 4VSON

Infineon Technologies

7,482 -
RFQ
IPL65R190E6AUMA1

Datenblatt

CoolMOS™ E6 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 700µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 151W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPL65R210CFDAUMA1

IPL65R210CFDAUMA1

MOSFET N-CH 650V 16.6A 4VSON

Infineon Technologies

6,956 -
RFQ
IPL65R210CFDAUMA1

Datenblatt

CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 16.6A (Tc) 10V 210mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPL65R310E6AUMA1

IPL65R310E6AUMA1

MOSFET N-CH 650V 13.1A THIN-PAK

Infineon Technologies

2,333 -
RFQ
IPL65R310E6AUMA1

Datenblatt

CoolMOS™ E6 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 13.1A (Tc) 10V 310mOhm @ 4.4A, 10V 3.5V @ 400µA 45 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPL65R340CFDAUMA1

IPL65R340CFDAUMA1

MOSFET N-CH 650V 10.9A THIN-PAK

Infineon Technologies

4,797 -
RFQ
IPL65R340CFDAUMA1

Datenblatt

CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 10.9A (Tc) 10V 340mOhm @ 4.4A, 10V 4.5V @ 400µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPL65R420E6AUMA1

IPL65R420E6AUMA1

MOSFET N-CH 650V 10.1A THIN-PAK

Infineon Technologies

6,988 -
RFQ
IPL65R420E6AUMA1

Datenblatt

CoolMOS™ E6 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 10.1A (Tc) 10V 420mOhm @ 3.4A, 10V 3.5V @ 300µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPL65R460CFDAUMA1

IPL65R460CFDAUMA1

MOSFET N-CH 650V 8.3A THIN-PAK

Infineon Technologies

2,551 -
RFQ
IPL65R460CFDAUMA1

Datenblatt

CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 8.3A (Tc) 10V 460mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPL65R660E6AUMA1

IPL65R660E6AUMA1

MOSFET N-CH 650V 7A THIN-PAK

Infineon Technologies

5,788 -
RFQ
IPL65R660E6AUMA1

Datenblatt

CoolMOS™ E6 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 660mOhm @ 2.1A, 10V 3.5V @ 200µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPP120P04P404AKSA1

IPP120P04P404AKSA1

MOSFET P-CH 40V 120A TO220-3

Infineon Technologies

3,291 -
RFQ
IPP120P04P404AKSA1

Datenblatt

OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 3.8mOhm @ 100A, 10V 4V @ 340µA 205 nC @ 10 V ±20V 14790 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3-1
IPP65R190CFDAAKSA1

IPP65R190CFDAAKSA1

MOSFET N-CH 650V 17.5A TO220-3

Infineon Technologies

5,088 -
RFQ
IPP65R190CFDAAKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3
IPP80P03P405AKSA1

IPP80P03P405AKSA1

MOSFET P-CH 30V 80A TO220-3

Infineon Technologies

5,569 -
RFQ
IPP80P03P405AKSA1

Datenblatt

OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 10V 5mOhm @ 80A, 10V 4V @ 253µA 130 nC @ 10 V ±20V 10300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3-1
IPP80P04P4L04AKSA1

IPP80P04P4L04AKSA1

MOSFET P-CH 40V 80A TO220-3

Infineon Technologies

2,581 -
RFQ
IPP80P04P4L04AKSA1

Datenblatt

OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 4.7mOhm @ 80A, 10V 2.2V @ 250µA 176 nC @ 10 V +5V, -16V 3800 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3-1
IPP80P04P4L06AKSA1

IPP80P04P4L06AKSA1

MOSFET P-CH 40V 80A TO220-3

Infineon Technologies

2,198 -
RFQ
IPP80P04P4L06AKSA1

Datenblatt

OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 6.7mOhm @ 80A, 10V 2.2V @ 150µA 104 nC @ 10 V +5V, -16V 6580 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3-1
IPP80P04P4L08AKSA1

IPP80P04P4L08AKSA1

MOSFET P-CH 40V 80A TO220-3

Infineon Technologies

9,250 -
RFQ
IPP80P04P4L08AKSA1

Datenblatt

OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 8.2mOhm @ 80A, 10V 2.2V @ 120µA 92 nC @ 10 V +5V, -16V 5430 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3-1
IPS65R600E6AKMA1

IPS65R600E6AKMA1

MOSFET N-CH 650V 7.3A TO251-3

Infineon Technologies

5,655 -
RFQ
IPS65R600E6AKMA1

Datenblatt

CoolMOS™ E6 TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-11
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