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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    EPC2018

    EPC2018

    GANFET N-CH 150V 12A DIE

    EPC

    		 4,747 -
    RFQ
    		EPC2018

    Datenblatt

         		eGaN® Die Tape & Reel (TR) Discontinued at Digi-Key N-Channel GaNFET (Gallium Nitride) 150 V 12A (Ta) 5V 25mOhm @ 6A, 5V 2.5V @ 3mA 7.5 nC @ 5 V +6V, -5V 540 pF @ 100 V - - -40°C ~ 125°C (TJ) - - Surface Mount Die
    AUIRFS8408-7TRR

    AUIRFS8408-7TRR

    MOSFET N-CH 40V 240A D2PAK

    Infineon Technologies

    		 3,489 -
    RFQ
    		AUIRFS8408-7TRR

    Datenblatt

         		HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1mOhm @ 100A, 10V 3.9V @ 250µA 315 nC @ 10 V ±20V 10250 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-900
    AUIRFS8405TRL

    AUIRFS8405TRL

    MOSFET N-CH 40V 120A D2PAK

    Infineon Technologies

    		 9,205 -
    RFQ
    		AUIRFS8405TRL

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 100A, 10V 3.9V @ 100µA 161 nC @ 10 V ±20V 5193 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    AUIRFSL8405

    AUIRFSL8405

    MOSFET N-CH 40V 120A TO262

    Infineon Technologies

    		 9,560 -
    RFQ
    		AUIRFSL8405

    Datenblatt

         		HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 100A, 10V 3.9V @ 100µA 161 nC @ 10 V ±20V 5193 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
    AUIRFU8403

    AUIRFU8403

    MOSFET N-CH 40V 100A IPAK

    Infineon Technologies

    		 2,184 -
    RFQ
    		AUIRFU8403

    Datenblatt

         		HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.1mOhm @ 76A, 10V 3.9V @ 100µA 99 nC @ 10 V ±20V 3171 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    AUIRFS8403

    AUIRFS8403

    MOSFET N-CH 40V 123A D2PAK

    Infineon Technologies

    		 4,240 -
    RFQ
    		AUIRFS8403

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 123A (Tc) 10V 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    AUIRFSL8403

    AUIRFSL8403

    MOSFET N-CH 40V 123A TO262

    Infineon Technologies

    		 4,648 -
    RFQ
    		AUIRFSL8403

    Datenblatt

         		HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 123A (Tc) 10V 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
    AUIRFS8405

    AUIRFS8405

    MOSFET N-CH 40V 120A D2PAK

    Infineon Technologies

    		 8,521 -
    RFQ
    		AUIRFS8405

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 100A, 10V 3.9V @ 100µA 161 nC @ 10 V ±20V 5193 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    AUIRFS8407

    AUIRFS8407

    MOSFET N-CH 40V 195A D2PAK

    Infineon Technologies

    		 2,661 -
    RFQ
    		AUIRFS8407

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.8mOhm @ 100A, 10V 4V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    AUIRFS8408

    AUIRFS8408

    MOSFET N-CH 40V 195A D2PAK

    Infineon Technologies

    		 9,745 -
    RFQ
    		AUIRFS8408

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    AUIRFS8408-7P

    AUIRFS8408-7P

    MOSFET N-CH 40V 240A D2PAK

    Infineon Technologies

    		 6,741 -
    RFQ
    		AUIRFS8408-7P

    Datenblatt

         		HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1mOhm @ 100A, 10V 3.9V @ 250µA 315 nC @ 10 V ±20V 10250 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-900
    AUIRFS8409

    AUIRFS8409

    MOSFET N-CH 40V 195A D2PAK

    Infineon Technologies

    		 2,470 -
    RFQ
    		AUIRFS8409

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 450 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    AUIRFR8401

    AUIRFR8401

    MOSFET N-CH 40V 100A DPAK

    Infineon Technologies

    		 6,127 -
    RFQ
    		AUIRFR8401

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 4.25mOhm @ 60A, 10V 3.9V @ 50µA 63 nC @ 10 V ±20V 2200 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    AUIRFU8405

    AUIRFU8405

    MOSFET N-CH 40V 100A IPAK

    Infineon Technologies

    		 5,228 -
    RFQ
    		AUIRFU8405

    Datenblatt

         		HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 1.98mOhm @ 90A, 10V 3.9V @ 100µA 155 nC @ 10 V ±20V 5171 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    AUIRFU8401

    AUIRFU8401

    MOSFET N-CH 40V 100A IPAK

    Infineon Technologies

    		 5,759 -
    RFQ
    		AUIRFU8401

    Datenblatt

         		HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 4.25mOhm @ 60A, 10V 3.9V @ 500µA 63 nC @ 10 V ±20V 2200 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    SK8603180L

    SK8603180L

    MOSFET N-CH 30V 15A/39A 8HSO

    Panasonic Electronic Components

    		 3,110 -
    RFQ

    -

    		 - 8-PowerSMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 39A (Tc) 4.5V, 10V 7.1mOhm @ 10A, 10V 3V @ 1.45mA 9.2 nC @ 4.5 V ±20V 1680 pF @ 10 V - 2.4W (Ta), 19W (Tc) 150°C (TJ) - - Surface Mount HSO8-F4-B
    SK8603190L

    SK8603190L

    MOSFET N-CH 30V 12A/19A 8HSO

    Panasonic Electronic Components

    		 4,273 -
    RFQ

    -

    		 - 8-PowerSMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 19A (Tc) 4.5V, 10V 10mOhm @ 8A, 10V 3V @ 1.01mA 6.3 nC @ 4.5 V ±20V 1092 pF @ 10 V - 2.7W (Ta), 19W (Tc) 150°C (TJ) - - Surface Mount HSO8-F4-B
    SCT2120AFC

    SCT2120AFC

    SICFET N-CH 650V 29A TO220AB

    Rohm Semiconductor

    		 2,037 -
    RFQ
    		SCT2120AFC

    Datenblatt

         		- TO-220-3 Tube Obsolete N-Channel SiCFET (Silicon Carbide) 650 V 29A (Tc) 18V 156mOhm @ 10A, 18V 4V @ 3.3mA 61 nC @ 18 V +22V, -6V 1200 pF @ 500 V - 165W (Tc) 175°C (TJ) - - Through Hole TO-220AB
    IRFH4213TRPBF

    IRFH4213TRPBF

    MOSFET N-CH 25V 41A PQFN

    Infineon Technologies

    		 3,365 -
    RFQ
    		IRFH4213TRPBF

    Datenblatt

         		HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 41A (Ta) 4.5V, 10V 1.35mOhm @ 50A, 10V 2.1V @ 100µA 54 nC @ 10 V ±20V 3420 pF @ 13 V - 3.6W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PQFN (5x6)
    IRFHM4226TRPBF

    IRFHM4226TRPBF

    MOSFET N CH 25V 28A PQFN

    Infineon Technologies

    		 8,716 -
    RFQ
    		IRFHM4226TRPBF

    Datenblatt

         		HEXFET® 8-TQFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 28A (Ta) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.1V @ 50µA 32 nC @ 10 V ±20V 2000 pF @ 13 V - 2.7W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount -
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