FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

Alles zurücksetzen
Alle anwenden
Ergebnis

FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
RJL5014DPK-00#T0

RJL5014DPK-00#T0

MOSFET N-CH 500V 19A TO3P

Renesas Electronics Corporation

8,827 -
RFQ
RJL5014DPK-00#T0

Datenblatt

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Ta) 10V 400mOhm @ 9.5A, 10V - 43 nC @ 10 V ±30V 1700 pF @ 25 V - 150W (Tc) 150°C (TJ) - - Through Hole TO-3P
RJL5020DPK-00#T0

RJL5020DPK-00#T0

MOSFET N-CH 500V 38A TO3P

Renesas Electronics Corporation

9,043 -
RFQ
RJL5020DPK-00#T0

Datenblatt

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 38A (Ta) 10V 135mOhm @ 19A, 10V - 140 nC @ 10 V ±30V 4750 pF @ 25 V - 200W (Tc) 150°C (TJ) - - Through Hole TO-3P
RJL6012DPE-00#J3

RJL6012DPE-00#J3

MOSFET N-CH 600V 10A 4LDPAK

Renesas Electronics Corporation

8,732 -
RFQ

-

- SC-83 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Ta) 10V 1.1Ohm @ 5A, 10V - 28 nC @ 10 V ±30V 1050 pF @ 25 V - 100W (Tc) 150°C (TJ) - - Surface Mount LDPAK
RJL6018DPK-00#T0

RJL6018DPK-00#T0

MOSFET N-CH 600V 27A TO3P

Renesas Electronics Corporation

6,534 -
RFQ

-

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 27A (Ta) 10V 265mOhm @ 13.5A, 10V - 98 nC @ 10 V ±30V 3830 pF @ 25 V - 200W (Tc) 150°C (TJ) - - Through Hole TO-3P
RJL6020DPK-00#T0

RJL6020DPK-00#T0

MOSFET N-CH 600V 30A TO3P

Renesas Electronics Corporation

4,473 -
RFQ
RJL6020DPK-00#T0

Datenblatt

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Ta) 10V 210mOhm @ 15A, 10V - 130 nC @ 10 V ±30V 4750 pF @ 25 V - 200W (Tc) 150°C (TJ) - - Through Hole TO-3P
UPA2735GR-E1-AT

UPA2735GR-E1-AT

MOSFET P-CH 30V 16A 8SOP

Renesas Electronics Corporation

8,763 -
RFQ
UPA2735GR-E1-AT

Datenblatt

- 8-PowerSOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 5mOhm @ 16A, 10V - 195 nC @ 10 V ±20V 6250 pF @ 10 V - 1.1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
UPA2736GR-E1-AT

UPA2736GR-E1-AT

MOSFET P-CH 30V 14A 8SOP

Renesas Electronics Corporation

4,396 -
RFQ
UPA2736GR-E1-AT

Datenblatt

- 8-PowerSOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 7mOhm @ 14A, 10V - 80 nC @ 10 V ±20V 3400 pF @ 10 V - 1.1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
UPA2737GR-E1-AT

UPA2737GR-E1-AT

MOSFET P-CH 30V 11A 8SOP

Renesas Electronics Corporation

9,694 -
RFQ
UPA2737GR-E1-AT

Datenblatt

- 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 13mOhm @ 11A, 10V - 45 nC @ 10 V ±20V 1750 pF @ 10 V - 1.1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
UPA2738GR-E1-AT

UPA2738GR-E1-AT

MOSFET P-CH 30V 10A 8SOP

Renesas Electronics Corporation

9,283 -
RFQ
UPA2738GR-E1-AT

Datenblatt

- 8-PowerSOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 15mOhm @ 10A, 10V - 37 nC @ 10 V ±20V 1450 pF @ 10 V - 1.1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
UPA2812T1L-E2-AT

UPA2812T1L-E2-AT

MOSFET P-CH 30V 30A 8HWSON

Renesas Electronics Corporation

7,333 -
RFQ
UPA2812T1L-E2-AT

Datenblatt

- 8-PowerVDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 4.8mOhm @ 30A, 10V - 100 nC @ 10 V ±20V 3740 pF @ 10 V - 1.5W (Ta) 150°C (TJ) - - Surface Mount 8-HWSON (3.3x3.3)
UPA2813T1L-E2-AT

UPA2813T1L-E2-AT

MOSFET P-CH 30V 27A 8HWSON

Renesas Electronics Corporation

6,815 -
RFQ
UPA2813T1L-E2-AT

Datenblatt

- 8-PowerVDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 27A (Tc) 4.5V, 10V 6.2mOhm @ 27A, 10V - 80 nC @ 10 V ±20V 3130 pF @ 10 V - 1.5W (Ta) 150°C (TJ) - - Surface Mount 8-HWSON (3.3x3.3)
UPA2821T1L-E1-AT

UPA2821T1L-E1-AT

MOSFET N-CH 30V 26A 8HWSON

Renesas Electronics Corporation

2,075 -
RFQ
UPA2821T1L-E1-AT

Datenblatt

- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 26A (Tc) 4.5V, 10V 3.8mOhm @ 26A, 10V - 51 nC @ 10 V ±20V 2490 pF @ 10 V - 1.5W (Ta) 150°C (TJ) - - Surface Mount 8-HWSON (3.3x3.3)
UPA2822T1L-E1-AT

UPA2822T1L-E1-AT

MOSFET N-CH 30V 34A 8HWSON

Renesas Electronics Corporation

3,934 -
RFQ
UPA2822T1L-E1-AT

Datenblatt

- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 34A (Tc) 4.5V, 10V 2.6mOhm @ 34A, 10V - 83 nC @ 10 V ±20V 4660 pF @ 10 V - 1.5W (Ta) 150°C (TJ) - - Surface Mount 8-HWSON (3.3x3.3)
DMG4N65CTI

DMG4N65CTI

MOSFET N-CH 650V 4A ITO220AB

Diodes Incorporated

3,443 -
RFQ
DMG4N65CTI

Datenblatt

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 3Ohm @ 2A, 10V 5V @ 250µA 13.5 nC @ 10 V ±30V 900 pF @ 25 V - 8.35W (Ta) -55°C ~ 150°C (TJ) - - Through Hole ITO-220AB
SIA439EDJ-T1-GE3

SIA439EDJ-T1-GE3

MOSFET P-CH 20V 28A PPAK SC70-6

Vishay Siliconix

3,415 -
RFQ
SIA439EDJ-T1-GE3

Datenblatt

TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 28A (Tc) 1.8V, 4.5V 16.5mOhm @ 5A, 4.5V 1V @ 250µA 69 nC @ 8 V ±8V 2410 pF @ 10 V - 3.5W (Ta), 19W (Tc) -50°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6
EPC2018

EPC2018

GANFET N-CH 150V 12A DIE

EPC

4,747 -
RFQ
EPC2018

Datenblatt

eGaN® Die Tape & Reel (TR) Discontinued at Digi-Key N-Channel GaNFET (Gallium Nitride) 150 V 12A (Ta) 5V 25mOhm @ 6A, 5V 2.5V @ 3mA 7.5 nC @ 5 V +6V, -5V 540 pF @ 100 V - - -40°C ~ 125°C (TJ) - - Surface Mount Die
AUIRFS8408-7TRR

AUIRFS8408-7TRR

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies

3,489 -
RFQ
AUIRFS8408-7TRR

Datenblatt

HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1mOhm @ 100A, 10V 3.9V @ 250µA 315 nC @ 10 V ±20V 10250 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-900
AUIRFS8405TRL

AUIRFS8405TRL

MOSFET N-CH 40V 120A D2PAK

Infineon Technologies

9,205 -
RFQ
AUIRFS8405TRL

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 100A, 10V 3.9V @ 100µA 161 nC @ 10 V ±20V 5193 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
AUIRFSL8405

AUIRFSL8405

MOSFET N-CH 40V 120A TO262

Infineon Technologies

9,560 -
RFQ
AUIRFSL8405

Datenblatt

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 100A, 10V 3.9V @ 100µA 161 nC @ 10 V ±20V 5193 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
AUIRFU8403

AUIRFU8403

MOSFET N-CH 40V 100A IPAK

Infineon Technologies

2,184 -
RFQ
AUIRFU8403

Datenblatt

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.1mOhm @ 76A, 10V 3.9V @ 100µA 99 nC @ 10 V ±20V 3171 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
TomatoElec

Suche

TomatoElec

Produkte

TomatoElec

Telefon

TomatoElec

Benutzer