FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
NP89N055MUK-S18-AY

NP89N055MUK-S18-AY

MOSFET N-CH 55V 90A TO220-3

Renesas Electronics Corporation

9,950 -
RFQ
NP89N055MUK-S18-AY

Datenblatt

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 90A (Tc) 10V 4.4mOhm @ 45A, 10V 4V @ 250µA 102 nC @ 10 V ±20V 6000 pF @ 25 V - 1.8W (Ta), 147W (Tc) 175°C (TJ) - - Through Hole TO-220-3
NP90N03VHG-E1-AY

NP90N03VHG-E1-AY

MOSFET N-CH 30V 90A TO252

Renesas Electronics Corporation

9,048 -
RFQ
NP90N03VHG-E1-AY

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 10V 3.2mOhm @ 45A, 10V 4V @ 250µA 135 nC @ 10 V ±20V 7500 pF @ 25 V - 1.2W (Ta), 105W (Tc) 175°C (TJ) - - Surface Mount TO-252
NP90N03VLG-E1-AY

NP90N03VLG-E1-AY

MOSFET N-CH 30V 90A TO252

Renesas Electronics Corporation

5,391 -
RFQ
NP90N03VLG-E1-AY

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 3.2mOhm @ 45A, 10V 2.5V @ 250µA 135 nC @ 10 V ±20V 7500 pF @ 25 V - 1.2W (Ta), 105W (Tc) 175°C (TJ) - - Surface Mount TO-252
NP90N04MUK-S18-AY

NP90N04MUK-S18-AY

MOSFET N-CH 40V 90A TO220

Renesas Electronics Corporation

5,811 -
RFQ
NP90N04MUK-S18-AY

Datenblatt

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 2.8mOhm @ 45A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 7050 pF @ 25 V - 1.8W (Ta), 176W (Tc) 175°C (TJ) - - Through Hole TO-220
NP90N055MUK-S18-AY

NP90N055MUK-S18-AY

MOSFET N-CH 55V 90A TO220-3

Renesas Electronics Corporation

2,881 -
RFQ
NP90N055MUK-S18-AY

Datenblatt

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 55 V 90A (Tc) 10V 3.8mOhm @ 45A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 7350 pF @ 25 V - 1.8W (Ta), 176W (Tc) 175°C (TJ) - - Through Hole TO-220-3
RJK0601DPN-E0#T2

RJK0601DPN-E0#T2

MOSFET N-CH 60V 110A TO220AB

Renesas Electronics Corporation

2,975 -
RFQ
RJK0601DPN-E0#T2

Datenblatt

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 110A (Ta) 10V 3.1mOhm @ 55A, 10V - 141 nC @ 10 V ±20V 10000 pF @ 10 V - 200W (Tc) 150°C (TJ) - - Through Hole TO-220AB
RJK0602DPN-E0#T2

RJK0602DPN-E0#T2

MOSFET N-CH 60V 110A TO220AB

Renesas Electronics Corporation

4,232 -
RFQ
RJK0602DPN-E0#T2

Datenblatt

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 110A (Ta) 10V 3.9mOhm @ 50A, 10V - 90 nC @ 10 V ±20V 6450 pF @ 10 V - 150W (Tc) 150°C (TJ) - - Through Hole TO-220AB
RJK0603DPN-E0#T2

RJK0603DPN-E0#T2

MOSFET N-CH 60V 80A TO220AB

Renesas Electronics Corporation

2,236 -
RFQ
RJK0603DPN-E0#T2

Datenblatt

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Ta) 10V 5.2mOhm @ 40A, 10V - 57 nC @ 10 V ±20V 4150 pF @ 10 V - 125W (Tc) 150°C (TJ) - - Through Hole TO-220AB
RJK0703DPN-E0#T2

RJK0703DPN-E0#T2

MOSFET N-CH 75V 70A TO220AB

Renesas Electronics Corporation

4,482 -
RFQ
RJK0703DPN-E0#T2

Datenblatt

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 70A (Ta) 10V 6.7mOhm @ 35A, 10V - 56 nC @ 10 V ±20V 4150 pF @ 10 V - 125W (Tc) 150°C (TJ) - - Through Hole TO-220AB
RJK0703DPP-E0#T2

RJK0703DPP-E0#T2

MOSFET N-CH 75V 70A TO220FP

Renesas Electronics Corporation

5,706 -
RFQ
RJK0703DPP-E0#T2

Datenblatt

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 70A (Ta) 10V 6.7mOhm @ 35A, 10V - 56 nC @ 10 V ±20V 4150 pF @ 10 V - 25W (Tc) 150°C (TJ) - - Through Hole TO-220FP
RJK1001DPP-E0#T2

RJK1001DPP-E0#T2

MOSFET N-CH 100V 80A TO220FP

Renesas Electronics Corporation

5,081 -
RFQ
RJK1001DPP-E0#T2

Datenblatt

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 80A (Ta) 10V 5.5mOhm @ 40A, 10V - 147 nC @ 10 V ±20V 10000 pF @ 10 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220FP
RJK1002DPN-E0#T2

RJK1002DPN-E0#T2

MOSFET N-CH 100V 70A TO220AB

Renesas Electronics Corporation

6,289 -
RFQ
RJK1002DPN-E0#T2

Datenblatt

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70A (Ta) 10V 7.6mOhm @ 35A, 10V - 94 nC @ 10 V ±20V 6450 pF @ 10 V - 150W (Tc) 150°C (TJ) - - Through Hole TO-220AB
RJK1002DPP-E0#T2

RJK1002DPP-E0#T2

MOSFET N-CH 100V 70A TO220FP

Renesas Electronics Corporation

6,204 -
RFQ
RJK1002DPP-E0#T2

Datenblatt

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70A (Ta) 10V 7.6mOhm @ 35A, 10V - 94 nC @ 10 V ±20V 6450 pF @ 10 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220FP
RJK1003DPN-E0#T2

RJK1003DPN-E0#T2

MOSFET N-CH 100V 50A TO220AB

Renesas Electronics Corporation

2,154 -
RFQ
RJK1003DPN-E0#T2

Datenblatt

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 50A (Ta) 10V 11mOhm @ 25A, 10V - 59 nC @ 10 V ±20V 4150 pF @ 10 V - 125W (Tc) 150°C (TJ) - - Through Hole TO-220AB
RJK1003DPP-E0#T2

RJK1003DPP-E0#T2

MOSFET N-CH 100V 50A TO220FP

Renesas Electronics Corporation

6,158 -
RFQ
RJK1003DPP-E0#T2

Datenblatt

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 50A (Ta) 10V 11mOhm @ 25A, 10V - 59 nC @ 10 V ±20V 4150 pF @ 10 V - 25W (Tc) 150°C (TJ) - - Through Hole TO-220FP
RJK2006DPE-00#J3

RJK2006DPE-00#J3

MOSFET N-CH 200V 40A 4LDPAK

Renesas Electronics Corporation

6,327 -
RFQ
RJK2006DPE-00#J3

Datenblatt

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 40A (Ta) 10V 59mOhm @ 20A, 10V - 43 nC @ 10 V ±30V 1800 pF @ 25 V - 100W (Tc) 150°C (TJ) - - Surface Mount LDPAK
RJK2009DPM-00#T0

RJK2009DPM-00#T0

MOSFET N-CH 200V 40A TO3PFM

Renesas Electronics Corporation

3,163 -
RFQ
RJK2009DPM-00#T0

Datenblatt

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 200 V 40A (Ta) 10V 36mOhm @ 20A, 10V - 72 nC @ 10 V ±30V 2900 pF @ 25 V - 60W (Tc) - - - Through Hole TO-3PFM
RJK2057DPA-00#J0

RJK2057DPA-00#J0

MOSFET N-CH 200V 20A 8WPAK

Renesas Electronics Corporation

2,832 -
RFQ
RJK2057DPA-00#J0

Datenblatt

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 20A (Ta) 10V 85mOhm @ 10A, 10V - 19 nC @ 10 V ±30V 1250 pF @ 25 V - 30W (Tc) 150°C (TJ) - - Surface Mount 8-WPAK (3)
RJK2508DPK-00#T0

RJK2508DPK-00#T0

MOSFET N-CH 250V 50A TO3P

Renesas Electronics Corporation

2,675 -
RFQ
RJK2508DPK-00#T0

Datenblatt

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 50A (Ta) 10V 64mOhm @ 25A, 10V - 60 nC @ 10 V ±30V 2600 pF @ 25 V - 150W (Tc) - - - Through Hole TO-3P
RJK2511DPK-00#T0

RJK2511DPK-00#T0

MOSFET N-CH 250V 65A TO3P

Renesas Electronics Corporation

2,878 -
RFQ
RJK2511DPK-00#T0

Datenblatt

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 65A (Ta) 10V 34mOhm @ 32.5A, 10V - 120 nC @ 10 V ±30V 4900 pF @ 25 V - 200W (Tc) 150°C (TJ) - - Through Hole TO-3P
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