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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    RJK6014DPP-E0#T2

    RJK6014DPP-E0#T2

    MOSFET N-CH 600V 16A TO220FP

    Renesas Electronics Corporation

    		 6,263 -
    RFQ
    		RJK6014DPP-E0#T2

    Datenblatt

         		- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 16A (Ta) 10V 575mOhm @ 8A, 10V - 45 nC @ 10 V ±30V 1800 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220FP
    RJK6015DPK-00#T0

    RJK6015DPK-00#T0

    MOSFET N-CH 600V 21A TO3P

    Renesas Electronics Corporation

    		 9,069 -
    RFQ
    		RJK6015DPK-00#T0

    Datenblatt

         		- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Ta) 10V 360mOhm @ 10.5A, 10V - 67 nC @ 10 V ±30V 2600 pF @ 25 V - 150W (Tc) 150°C (TJ) - - Through Hole TO-3P
    RJK6015DPM-00#T1

    RJK6015DPM-00#T1

    MOSFET N-CH 600V 21A TO3PFM

    Renesas Electronics Corporation

    		 8,554 -
    RFQ
    		RJK6015DPM-00#T1

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Ta) 10V 360mOhm @ 10.5A, 10V - 67 nC @ 10 V ±30V 2600 pF @ 25 V - 60W (Tc) 150°C (TJ) - - Through Hole TO-3PFM
    RJK6018DPK-00#T0

    RJK6018DPK-00#T0

    MOSFET N-CH 600V 30A TO3P

    Renesas Electronics Corporation

    		 5,563 -
    RFQ
    		RJK6018DPK-00#T0

    Datenblatt

         		- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Ta) 10V 235mOhm @ 15A, 10V - 92 nC @ 10 V ±30V 4100 pF @ 25 V - 200W (Tc) 150°C (TJ) - - Through Hole TO-3P
    RJK6018DPM-00#T1

    RJK6018DPM-00#T1

    MOSFET N-CH 600V 30A TO3PFM

    Renesas Electronics Corporation

    		 8,156 -
    RFQ
    		RJK6018DPM-00#T1

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Ta) 10V 235mOhm @ 15A, 10V - 92 nC @ 10 V ±30V 4100 pF @ 25 V - 60W (Tc) 150°C (TJ) - - Through Hole TO-3PFM
    RJK6020DPK-00#T0

    RJK6020DPK-00#T0

    MOSFET N-CH 600V 32A TO3P

    Renesas Electronics Corporation

    		 6,091 -
    RFQ
    		RJK6020DPK-00#T0

    Datenblatt

         		- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Ta) 10V 175mOhm @ 16A, 10V - 121 nC @ 10 V ±30V 5150 pF @ 25 V - 200W (Tc) 150°C (TJ) - - Through Hole TO-3P
    RJK6032DPH-E0#T2

    RJK6032DPH-E0#T2

    MOSFET N-CH 600V 3A TO251

    Renesas Electronics Corporation

    		 3,988 -
    RFQ
    		RJK6032DPH-E0#T2

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3A (Ta) 10V 4.3Ohm @ 1.5A, 10V - 9 nC @ 10 V ±30V 285 pF @ 25 V - 40.3W (Tc) 150°C (TJ) - - Through Hole TO-251
    RJL5012DPE-00#J3

    RJL5012DPE-00#J3

    MOSFET N-CH 500V 12A 4LDPAK

    Renesas Electronics Corporation

    		 7,665 -
    RFQ
    		RJL5012DPE-00#J3

    Datenblatt

         		- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Ta) 10V 700mOhm @ 6A, 10V - 27.8 nC @ 10 V ±30V 1050 pF @ 25 V - 100W (Tc) 150°C (TJ) - - Surface Mount LDPAK
    RJL5012DPP-M0#T2

    RJL5012DPP-M0#T2

    MOSFET N-CH 500V 12A TO220FL

    Renesas Electronics Corporation

    		 8,365 -
    RFQ
    		RJL5012DPP-M0#T2

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Ta) 10V 700mOhm @ 6A, 10V - 27.8 nC @ 10 V ±30V 1050 pF @ 25 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220FL
    RJL5014DPK-00#T0

    RJL5014DPK-00#T0

    MOSFET N-CH 500V 19A TO3P

    Renesas Electronics Corporation

    		 8,827 -
    RFQ
    		RJL5014DPK-00#T0

    Datenblatt

         		- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Ta) 10V 400mOhm @ 9.5A, 10V - 43 nC @ 10 V ±30V 1700 pF @ 25 V - 150W (Tc) 150°C (TJ) - - Through Hole TO-3P
    RJL5020DPK-00#T0

    RJL5020DPK-00#T0

    MOSFET N-CH 500V 38A TO3P

    Renesas Electronics Corporation

    		 9,043 -
    RFQ
    		RJL5020DPK-00#T0

    Datenblatt

         		- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 38A (Ta) 10V 135mOhm @ 19A, 10V - 140 nC @ 10 V ±30V 4750 pF @ 25 V - 200W (Tc) 150°C (TJ) - - Through Hole TO-3P
    RJL6012DPE-00#J3

    RJL6012DPE-00#J3

    MOSFET N-CH 600V 10A 4LDPAK

    Renesas Electronics Corporation

    		 8,732 -
    RFQ

    -

    		 - SC-83 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Ta) 10V 1.1Ohm @ 5A, 10V - 28 nC @ 10 V ±30V 1050 pF @ 25 V - 100W (Tc) 150°C (TJ) - - Surface Mount LDPAK
    RJL6018DPK-00#T0

    RJL6018DPK-00#T0

    MOSFET N-CH 600V 27A TO3P

    Renesas Electronics Corporation

    		 6,534 -
    RFQ

    -

    		 - TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 27A (Ta) 10V 265mOhm @ 13.5A, 10V - 98 nC @ 10 V ±30V 3830 pF @ 25 V - 200W (Tc) 150°C (TJ) - - Through Hole TO-3P
    RJL6020DPK-00#T0

    RJL6020DPK-00#T0

    MOSFET N-CH 600V 30A TO3P

    Renesas Electronics Corporation

    		 4,473 -
    RFQ
    		RJL6020DPK-00#T0

    Datenblatt

         		- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Ta) 10V 210mOhm @ 15A, 10V - 130 nC @ 10 V ±30V 4750 pF @ 25 V - 200W (Tc) 150°C (TJ) - - Through Hole TO-3P
    UPA2735GR-E1-AT

    UPA2735GR-E1-AT

    MOSFET P-CH 30V 16A 8SOP

    Renesas Electronics Corporation

    		 8,763 -
    RFQ
    		UPA2735GR-E1-AT

    Datenblatt

         		- 8-PowerSOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 5mOhm @ 16A, 10V - 195 nC @ 10 V ±20V 6250 pF @ 10 V - 1.1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    UPA2736GR-E1-AT

    UPA2736GR-E1-AT

    MOSFET P-CH 30V 14A 8SOP

    Renesas Electronics Corporation

    		 4,396 -
    RFQ
    		UPA2736GR-E1-AT

    Datenblatt

         		- 8-PowerSOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 7mOhm @ 14A, 10V - 80 nC @ 10 V ±20V 3400 pF @ 10 V - 1.1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    UPA2737GR-E1-AT

    UPA2737GR-E1-AT

    MOSFET P-CH 30V 11A 8SOP

    Renesas Electronics Corporation

    		 9,694 -
    RFQ
    		UPA2737GR-E1-AT

    Datenblatt

         		- 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 13mOhm @ 11A, 10V - 45 nC @ 10 V ±20V 1750 pF @ 10 V - 1.1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    UPA2738GR-E1-AT

    UPA2738GR-E1-AT

    MOSFET P-CH 30V 10A 8SOP

    Renesas Electronics Corporation

    		 9,283 -
    RFQ
    		UPA2738GR-E1-AT

    Datenblatt

         		- 8-PowerSOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 15mOhm @ 10A, 10V - 37 nC @ 10 V ±20V 1450 pF @ 10 V - 1.1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    UPA2812T1L-E2-AT

    UPA2812T1L-E2-AT

    MOSFET P-CH 30V 30A 8HWSON

    Renesas Electronics Corporation

    		 7,333 -
    RFQ
    		UPA2812T1L-E2-AT

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 4.8mOhm @ 30A, 10V - 100 nC @ 10 V ±20V 3740 pF @ 10 V - 1.5W (Ta) 150°C (TJ) - - Surface Mount 8-HWSON (3.3x3.3)
    UPA2813T1L-E2-AT

    UPA2813T1L-E2-AT

    MOSFET P-CH 30V 27A 8HWSON

    Renesas Electronics Corporation

    		 6,815 -
    RFQ
    		UPA2813T1L-E2-AT

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 27A (Tc) 4.5V, 10V 6.2mOhm @ 27A, 10V - 80 nC @ 10 V ±20V 3130 pF @ 10 V - 1.5W (Ta) 150°C (TJ) - - Surface Mount 8-HWSON (3.3x3.3)
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