FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

Alles zurücksetzen
Alle anwenden
Ergebnis

FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
RJK2555DPA-00#J0

RJK2555DPA-00#J0

MOSFET N-CH 250V 17A 8WPAK

Renesas Electronics Corporation

4,366 -
RFQ
RJK2555DPA-00#J0

Datenblatt

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 17A (Ta) 10V 104mOhm @ 8.5A, 10V - 39 nC @ 10 V ±30V 2400 pF @ 25 V - 30W (Tc) 150°C (TJ) - - Surface Mount 8-WPAK (3)
RJK2557DPA-00#J0

RJK2557DPA-00#J0

MOSFET N-CH 250V 17A 8WPAK

Renesas Electronics Corporation

3,195 -
RFQ
RJK2557DPA-00#J0

Datenblatt

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 17A (Ta) 10V 128mOhm @ 8.5A, 10V - 20 nC @ 10 V ±30V 1250 pF @ 25 V - 30W (Tc) 150°C (TJ) - - Surface Mount 8-WPAK (3)
RJK4002DJE-00#Z0

RJK4002DJE-00#Z0

MOSFET N-CH 400V 3A TO92MOD

Renesas Electronics Corporation

8,877 -
RFQ

-

- TO-226-3, TO-92-3 Long Body, Formed Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 400 V 3A (Ta) 10V 2.9Ohm @ 1.5A, 10V - 6 nC @ 100 V ±30V 165 pF @ 25 V - 2.54W (Tc) 150°C (TJ) - - Through Hole TO-92MOD
RJK4002DPP-M0#T2

RJK4002DPP-M0#T2

MOSFET N-CH 400V 3A TO220FL

Renesas Electronics Corporation

8,802 -
RFQ
RJK4002DPP-M0#T2

Datenblatt

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 400 V 3A (Ta) 10V 2.9Ohm @ 1.5A, 10V - 6 nC @ 100 V ±30V 165 pF @ 25 V - 20W (Tc) 150°C (TJ) - - Through Hole TO-220FL
RJK4006DPD-00#J2

RJK4006DPD-00#J2

MOSFET N-CH 400V 8A MP3A

Renesas Electronics Corporation

7,379 -
RFQ
RJK4006DPD-00#J2

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 400 V 8A (Ta) 10V 800mOhm @ 4A, 10V - 20 nC @ 10 V ±30V 620 pF @ 25 V - 65W (Tc) 150°C (TJ) - - Surface Mount MP-3A
RJK4006DPP-M0#T2

RJK4006DPP-M0#T2

MOSFET N-CH 400V 8A TO220FL

Renesas Electronics Corporation

8,491 -
RFQ
RJK4006DPP-M0#T2

Datenblatt

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 400 V 8A (Ta) 10V 800mOhm @ 4A, 10V - 20 nC @ 10 V ±30V 620 pF @ 25 V - 29W (Tc) 150°C (TJ) - - Through Hole TO-220FL
RJK4007DPP-M0#T2

RJK4007DPP-M0#T2

MOSFET N-CH 400V 7.6A TO220FL

Renesas Electronics Corporation

2,318 -
RFQ
RJK4007DPP-M0#T2

Datenblatt

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 400 V 7.6A (Ta) 10V 550mOhm @ 7A, 10V - 24.5 nC @ 10 V ±30V 850 pF @ 25 V - 32W (Tc) 150°C (TJ) - - Through Hole TO-220FL
RJK4013DPE-00#J3

RJK4013DPE-00#J3

MOSFET N-CH 400V 17A 4LDPAK

Renesas Electronics Corporation

8,115 -
RFQ
RJK4013DPE-00#J3

Datenblatt

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 400 V 17A (Ta) 10V 300mOhm @ 8.5A, 10V - 38 nC @ 10 V ±30V 1450 pF @ 25 V - 100W (Tc) 150°C (TJ) - - Surface Mount LDPAK
RJK4018DPK-00#T0

RJK4018DPK-00#T0

MOSFET N-CH 400V 43A TO3P

Renesas Electronics Corporation

7,624 -
RFQ
RJK4018DPK-00#T0

Datenblatt

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 400 V 43A (Ta) 10V 100mOhm @ 21.5A, 10V - 99 nC @ 10 V ±30V 4100 pF @ 25 V - 200W (Tc) 150°C (TJ) - - Through Hole TO-3P
RJK4512DPE-00#J3

RJK4512DPE-00#J3

MOSFET N-CH 450V 14A 4LDPAK

Renesas Electronics Corporation

3,776 -
RFQ
RJK4512DPE-00#J3

Datenblatt

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 450 V 14A (Ta) 10V 510mOhm @ 7A, 10V - 29 nC @ 10 V ±30V 1100 pF @ 25 V - 100W (Tc) 150°C (TJ) - - Surface Mount LDPAK
RJK4514DPK-00#T0

RJK4514DPK-00#T0

MOSFET N-CH 450V 22A TO3P

Renesas Electronics Corporation

2,006 -
RFQ
RJK4514DPK-00#T0

Datenblatt

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 450 V 22A (Ta) 10V 300mOhm @ 11A, 10V - 46 nC @ 10 V ±30V 1800 pF @ 25 V - 150W (Tc) 150°C (TJ) - - Through Hole TO-3P
RJK4518DPK-00#T0

RJK4518DPK-00#T0

MOSFET N-CH 450V 39A TO3P

Renesas Electronics Corporation

4,703 -
RFQ
RJK4518DPK-00#T0

Datenblatt

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 450 V 39A (Ta) 10V 130mOhm @ 19.5A, 10V - 93 nC @ 10 V ±30V 4100 pF @ 25 V - 200W (Tc) 150°C (TJ) - - Through Hole TO-3P
RJK4532DPD-00#J2

RJK4532DPD-00#J2

MOSFET N-CH 450V 4A MP3A

Renesas Electronics Corporation

7,497 -
RFQ
RJK4532DPD-00#J2

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 450 V 4A (Ta) 10V 2.3Ohm @ 2A, 10V - 9 nC @ 10 V ±30V 280 pF @ 25 V - 40.3W (Tc) 150°C (TJ) - - Surface Mount MP-3A
RJK5012DPE-00#J3

RJK5012DPE-00#J3

MOSFET N-CH 500V 12A 4LDPAK

Renesas Electronics Corporation

5,376 -
RFQ
RJK5012DPE-00#J3

Datenblatt

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Ta) 10V 620mOhm @ 6A, 10V - 29 nC @ 10 V ±30V 1100 pF @ 25 V - 100W (Tc) 150°C (TJ) - - Surface Mount LDPAK
RJK5012DPP-E0#T2

RJK5012DPP-E0#T2

MOSFET N-CH 500V 12A TO220FP

Renesas Electronics Corporation

2,388 -
RFQ
RJK5012DPP-E0#T2

Datenblatt

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Ta) 10V 620mOhm @ 6A, 10V - 29 nC @ 10 V ±30V 1100 pF @ 25 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220FP
RJK5013DPE-00#J3

RJK5013DPE-00#J3

MOSFET N-CH 500V 14A 4LDPAK

Renesas Electronics Corporation

9,816 -
RFQ
RJK5013DPE-00#J3

Datenblatt

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Ta) 10V 465mOhm @ 7A, 10V - 38 nC @ 10 V ±30V 1450 pF @ 25 V - 100W (Tc) 150°C (TJ) - - Surface Mount LDPAK
RJK5013DPP-E0#T2

RJK5013DPP-E0#T2

MOSFET N-CH 500V 14A TO220FP

Renesas Electronics Corporation

7,915 -
RFQ
RJK5013DPP-E0#T2

Datenblatt

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14A (Ta) 10V 465mOhm @ 7A, 10V - 38 nC @ 10 V ±30V 1450 pF @ 25 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220FP
RJK5014DPP-E0#T2

RJK5014DPP-E0#T2

MOSFET N-CH 500V 19A TO220FP

Renesas Electronics Corporation

8,128 -
RFQ
RJK5014DPP-E0#T2

Datenblatt

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 19A (Ta) 10V 390mOhm @ 9.5A, 10V - 46 nC @ 10 V ±30V 1800 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220FP
RJK5015DPM-00#T1

RJK5015DPM-00#T1

MOSFET N-CH 500V 25A TO3PFM

Renesas Electronics Corporation

6,896 -
RFQ
RJK5015DPM-00#T1

Datenblatt

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 25A (Ta) 10V 240mOhm @ 12.5A, 10V - 66 nC @ 10 V ±30V 2600 pF @ 25 V - 60W (Tc) 150°C (TJ) - - Through Hole TO-3PFM
RJK5018DPK-00#T0

RJK5018DPK-00#T0

MOSFET N-CH 500V 35A TO3P

Renesas Electronics Corporation

8,095 -
RFQ
RJK5018DPK-00#T0

Datenblatt

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 35A (Ta) 10V 155mOhm @ 17.5A, 10V - 104 nC @ 10 V ±30V 4100 pF @ 25 V - 200W (Tc) 150°C (TJ) - - Through Hole TO-3P
TomatoElec

Suche

TomatoElec

Produkte

TomatoElec

Telefon

TomatoElec

Benutzer