FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
AUIRLR3915

AUIRLR3915

MOSFET N-CH 55V 30A DPAK

Infineon Technologies

4,401 -
RFQ
AUIRLR3915

Datenblatt

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 5V, 10V 14mOhm @ 30A, 10V 3V @ 250µA 92 nC @ 10 V ±16V 1870 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
AUIRLS3034

AUIRLS3034

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies

6,361 -
RFQ
AUIRLS3034

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.7mOhm @ 195A, 10V 2.5V @ 250µA 162 nC @ 4.5 V ±20V 10315 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRLS3034-7P

AUIRLS3034-7P

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies

8,605 -
RFQ
AUIRLS3034-7P

Datenblatt

HEXFET® TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 4.5V, 10V 1.4mOhm @ 200A, 10V 2.5V @ 250µA 180 nC @ 4.5 V ±20V 10990 pF @ 40 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
AUIRLS3036

AUIRLS3036

MOSFET N-CH 60V 195A D2PAK

Infineon Technologies

5,943 -
RFQ
AUIRLS3036

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
AUIRLS3036-7P

AUIRLS3036-7P

MOSFET N-CH 60V 240A D2PAK

Infineon Technologies

9,897 -
RFQ
AUIRLS3036-7P

Datenblatt

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 4.5V, 10V 1.9mOhm @ 180A, 10V 2.5V @ 250µA 160 nC @ 4.5 V ±16V 11270 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
AUIRLS4030

AUIRLS4030

MOSFET N-CH 100V 180A D2PAK

Infineon Technologies

5,660 -
RFQ
AUIRLS4030

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 4.5V, 10V 4.3mOhm @ 110A, 10V 2.5V @ 250µA 130 nC @ 4.5 V ±16V 11360 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3
AUIRLS4030-7P

AUIRLS4030-7P

MOSFET N-CH 100V 190A D2PAK

Infineon Technologies

4,608 -
RFQ
AUIRLS4030-7P

Datenblatt

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) 4.5V, 10V 3.9mOhm @ 110A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11490 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK (7-Lead)
AUIRLU2905

AUIRLU2905

MOSFET N-CH 55V 42A IPAK

Infineon Technologies

4,063 -
RFQ
AUIRLU2905

Datenblatt

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
AUIRLU3110Z

AUIRLU3110Z

MOSFET N-CH 100V 42A IPAK

Infineon Technologies

4,489 -
RFQ
AUIRLU3110Z

Datenblatt

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) - 14mOhm @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V - 3980 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
AUIRLZ44ZL

AUIRLZ44ZL

MOSFET N-CH 55V 51A TO220AB

Infineon Technologies

8,256 -
RFQ
AUIRLZ44ZL

Datenblatt

- TO-220-3 Tube Obsolete - - - 51A (Tc) 4.5V, 10V - - - ±16V - - - -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRF3710ZGPBF

IRF3710ZGPBF

MOSFET N-CH 100V 59A TO220AB

Infineon Technologies

9,815 -
RFQ
IRF3710ZGPBF

Datenblatt

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 18mOhm @ 35A, 10V 4V @ 250mA 120 nC @ 10 V ±20V 2900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRF4104GPBF

IRF4104GPBF

MOSFET N CH 40V 75A TO220AB

Infineon Technologies

6,306 -
RFQ
IRF4104GPBF

Datenblatt

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.5mOhm @ 75A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3000 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IPW50R280CEFKSA1

IPW50R280CEFKSA1

MOSFET N-CH 500V 13A TO247-3

Infineon Technologies

8,086 -
RFQ
IPW50R280CEFKSA1

Datenblatt

CoolMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 13V 280mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6 nC @ 10 V ±20V 773 pF @ 100 V - 92W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
IPD50R950CEBTMA1

IPD50R950CEBTMA1

MOSFET N-CH 500V 4.3A TO252-3

Infineon Technologies

3,511 -
RFQ
IPD50R950CEBTMA1

Datenblatt

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 500 V 4.3A (Tc) 13V 950mOhm @ 1.2A, 13V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 231 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3-11
IPD50R280CEBTMA1

IPD50R280CEBTMA1

MOSFET N-CH 500V 13A TO252-3

Infineon Technologies

7,299 -
RFQ
IPD50R280CEBTMA1

Datenblatt

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 13V 280mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6 nC @ 10 V ±20V 773 pF @ 100 V - 92W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3-11
IPP50R500CEXKSA1

IPP50R500CEXKSA1

MOSFET N-CH 500V 7.6A TO220-3

Infineon Technologies

7,964 -
RFQ
IPP50R500CEXKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 7.6A (Tc) 13V 500mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7 nC @ 10 V ±20V 433 pF @ 100 V - - - - - Through Hole PG-TO220-3-1
IPD50R500CEBTMA1

IPD50R500CEBTMA1

MOSFET N-CH 500V 7.6A TO252-3

Infineon Technologies

7,920 -
RFQ
IPD50R500CEBTMA1

Datenblatt

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 500 V 7.6A (Tc) 13V 500mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7 nC @ 10 V ±20V 433 pF @ 100 V - 57W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3-11
STI11NM80

STI11NM80

MOSFET N-CH 800V 11A I2PAK

STMicroelectronics

5,712 -
RFQ
STI11NM80

Datenblatt

MDmesh™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 400mOhm @ 5.5A, 10V 5V @ 250µA 43.6 nC @ 10 V ±30V 1630 pF @ 25 V - 150W (Tc) -65°C ~ 150°C (TJ) - - Through Hole I2PAK (TO-262)
FDMS8558SDC

FDMS8558SDC

MOSFET N-CH 25V 33A 8-PQFN

onsemi

2,797 -
RFQ

-

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
SFT1342-W

SFT1342-W

MOSFET P-CH 60V 12A TP

onsemi

2,851 -
RFQ
SFT1342-W

Datenblatt

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 12A (Ta) 4V, 10V 62mOhm @ 6A, 10V - 26 nC @ 10 V ±20V 1150 pF @ 20 V - 1W (Ta), 15W (Tc) 150°C (TJ) - - Through Hole IPAK/TP
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