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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IRF8304MTRPBF

    IRF8304MTRPBF

    MOSFET N-CH 30V 28A DIRECTFET

    Infineon Technologies

    		 2,421 -
    RFQ
    		IRF8304MTRPBF

    Datenblatt

         		HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 170A (Tc) 4.5V, 10V 2.2mOhm @ 28A, 10V 2.35V @ 100µA 42 nC @ 4.5 V ±20V 4700 pF @ 15 V - 2.8W (Ta), 100W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DirectFET™ Isometric MX
    IRF8308MTRPBF

    IRF8308MTRPBF

    MOSFET N-CH 30V 27A DIRECTFET

    Infineon Technologies

    		 3,053 -
    RFQ
    		IRF8308MTRPBF

    Datenblatt

         		HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 150A (Tc) 4.5V, 10V 2.5mOhm @ 27A, 10V 2.35V @ 100µA 42 nC @ 4.5 V ±20V 4404 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MX
    IRF8327STRPBF

    IRF8327STRPBF

    MOSFET N-CH 30V 14A DIRECTFET

    Infineon Technologies

    		 6,002 -
    RFQ
    		IRF8327STRPBF

    Datenblatt

         		- DirectFET™ Isometric SQ Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 60A (Tc) 4.5V, 10V 7.3mOhm @ 14A, 10V 2.4V @ 25µA 14 nC @ 4.5 V ±20V 1430 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ SQ
    IRLR8743TRLPBF

    IRLR8743TRLPBF

    MOSFET N-CH 30V 160A DPAK

    Infineon Technologies

    		 2,851 -
    RFQ
    		IRLR8743TRLPBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 4.5V, 10V 3.1mOhm @ 25A, 10V 2.35V @ 100µA 59 nC @ 4.5 V ±20V 4880 pF @ 15 V - 135W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    IRF6892STR1PBF

    IRF6892STR1PBF

    MOSFET N-CH 25V 28A DIRECTFET

    Infineon Technologies

    		 2,248 -
    RFQ
    		IRF6892STR1PBF

    Datenblatt

         		HEXFET® DirectFET™ Isometric S3C Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 28A (Ta), 125A (Tc) 4.5V, 10V 1.7mOhm @ 28A, 10V 2.1V @ 50µA 25 nC @ 4.5 V ±16V 2510 pF @ 13 V - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ S3C
    IRF8302MTR1PBF

    IRF8302MTR1PBF

    MOSFET N CH 30V 31A MX

    Infineon Technologies

    		 8,690 -
    RFQ
    		IRF8302MTR1PBF

    Datenblatt

         		HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 31A (Ta), 190A (Tc) 4.5V, 10V 1.8mOhm @ 31A, 10V 2.35V @ 150µA 53 nC @ 4.5 V ±20V 6030 pF @ 15 V - 2.8W (Ta), 104W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MX
    IRF8304MTR1PBF

    IRF8304MTR1PBF

    MOSFET N-CH 30V 28A DIRECTFET

    Infineon Technologies

    		 2,705 -
    RFQ
    		IRF8304MTR1PBF

    Datenblatt

         		HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 170A (Tc) 4.5V, 10V 2.2mOhm @ 28A, 10V 2.35V @ 100µA 42 nC @ 4.5 V ±20V 4700 pF @ 15 V - 2.8W (Ta), 100W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MX
    IRF8327STR1PBF

    IRF8327STR1PBF

    MOSFET N-CH 30V 14A DIRECTFET

    Infineon Technologies

    		 9,456 -
    RFQ
    		IRF8327STR1PBF

    Datenblatt

         		- DirectFET™ Isometric SQ Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 60A (Tc) 4.5V, 10V 7.3mOhm @ 14A, 10V 2.4V @ 25µA 14 nC @ 4.5 V ±20V 1430 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ SQ
    AUIRF1018ES

    AUIRF1018ES

    MOSFET N-CH 60V 79A D2PAK

    Infineon Technologies

    		 5,164 -
    RFQ
    		AUIRF1018ES

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 79A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    AUIRF1404

    AUIRF1404

    MOSFET N-CH 40V 160A TO220AB

    Infineon Technologies

    		 3,454 -
    RFQ
    		AUIRF1404

    Datenblatt

         		HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 4mOhm @ 121A, 10V 4V @ 250µA 196 nC @ 10 V ±20V 5669 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    AUIRF1404S

    AUIRF1404S

    MOSFET N-CH 40V 75A D2PAK

    Infineon Technologies

    		 7,780 -
    RFQ
    		AUIRF1404S

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    AUIRF1405

    AUIRF1405

    MOSFET N-CH 55V 75A TO220AB

    Infineon Technologies

    		 2,536 -
    RFQ
    		AUIRF1405

    Datenblatt

         		HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 5.3mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    AUIRF2805

    AUIRF2805

    MOSFET N-CH 55V 75A TO220AB

    Infineon Technologies

    		 3,343 -
    RFQ
    		AUIRF2805

    Datenblatt

         		HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.7mOhm @ 104A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 5110 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    AUIRF2805S

    AUIRF2805S

    MOSFET N-CH 55V 135A D2PAK

    Infineon Technologies

    		 7,107 -
    RFQ
    		AUIRF2805S

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 135A (Tc) 10V 4.7mOhm @ 104A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 5110 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    AUIRF2807

    AUIRF2807

    MOSFET N-CH 75V 75A TO220AB

    Infineon Technologies

    		 7,504 -
    RFQ
    		AUIRF2807

    Datenblatt

         		HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 13mOhm @ 43A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3820 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    AUIRF2903Z

    AUIRF2903Z

    MOSFET N-CH 30V 160A TO220AB

    Infineon Technologies

    		 6,201 -
    RFQ
    		AUIRF2903Z

    Datenblatt

         		HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    AUIRF2903ZL

    AUIRF2903ZL

    MOSFET N-CH 30V 160A TO262

    Infineon Technologies

    		 6,496 -
    RFQ
    		AUIRF2903ZL

    Datenblatt

         		HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 150µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
    AUIRF2903ZS

    AUIRF2903ZS

    MOSFET N-CH 30V 160A D2PAK

    Infineon Technologies

    		 3,874 -
    RFQ
    		AUIRF2903ZS

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 150µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    AUIRF3004WL

    AUIRF3004WL

    MOSFET N-CH 40V 240A TO262-3

    Infineon Technologies

    		 5,882 -
    RFQ
    		AUIRF3004WL

    Datenblatt

         		HEXFET® TO-262-3 Wide Leads Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.4mOhm @ 195A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9450 pF @ 32 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-262-3 Wide
    AUIRF3007

    AUIRF3007

    MOSFET N-CH 75V 75A TO220AB

    Infineon Technologies

    		 7,790 -
    RFQ
    		AUIRF3007

    Datenblatt

         		HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 12.6mOhm @ 48A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3270 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
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