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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    EPC2016

    EPC2016

    GANFET N-CH 100V 11A DIE

    EPC

    		 2,747 -
    RFQ
    		EPC2016

    Datenblatt

         		eGaN® Die Tape & Reel (TR) Discontinued at Digi-Key N-Channel GaNFET (Gallium Nitride) 100 V 11A (Ta) 5V 16mOhm @ 11A, 5V 2.5V @ 3mA 5.2 nC @ 5 V +6V, -5V 520 pF @ 50 V - - -40°C ~ 125°C (TJ) - - Surface Mount Die
    2N7002-G

    2N7002-G

    MOSFET N-CH 60V 0.25A SOT23-3

    Comchip Technology

    		 8,475 -
    RFQ
    		2N7002-G

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 250mA (Ta) 4.5V, 10V 3Ohm @ 250mA, 10V 2.5V @ 250µA 1 nC @ 10 V - 25 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
    SI8439DB-T1-E1

    SI8439DB-T1-E1

    MOSFET P-CH 8V 4MICROFOOT

    Vishay Siliconix

    		 8,133 -
    RFQ
    		SI8439DB-T1-E1

    Datenblatt

         		TrenchFET® 4-UFBGA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 8 V 5.9A (Ta) 1.2V, 4.5V 25mOhm @ 1.5A, 4.5V 800mV @ 250µA 50 nC @ 4.5 V ±5V - - 1.1W (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 4-Microfoot
    BUK6246-75C,118

    BUK6246-75C,118

    MOSFET N-CH 75V 22A DPAK

    Nexperia USA Inc.

    		 5,241 -
    RFQ
    		BUK6246-75C,118

    Datenblatt

         		TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75 V 22A (Tc) 4.5V, 10V 46mOhm @ 10A, 10V 2.8V @ 1mA 21.4 nC @ 10 V ±16V 1280 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
    BUK626R2-40C,118

    BUK626R2-40C,118

    MOSFET N-CH 40V 90A DPAK

    Nexperia USA Inc.

    		 7,807 -
    RFQ
    		BUK626R2-40C,118

    Datenblatt

         		TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 6.2mOhm @ 15A, 10V 2.8V @ 1mA 67 nC @ 10 V ±16V 3720 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
    BUK653R3-30C,127

    BUK653R3-30C,127

    MOSFET N-CH 30V 100A TO220AB

    Nexperia USA Inc.

    		 5,311 -
    RFQ
    		BUK653R3-30C,127

    Datenblatt

         		TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 3.3mOhm @ 25A, 10V 2.8V @ 1mA 114 nC @ 10 V ±16V 6960 pF @ 25 V - 204W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    PMN35EN,125

    PMN35EN,125

    MOSFET N-CH 30V 5.1A 6TSOP

    Nexperia USA Inc.

    		 9,135 -
    RFQ
    		PMN35EN,125

    Datenblatt

         		- SC-74, SOT-457 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5.1A (Ta) 4.5V, 10V 31mOhm @ 5.1A, 10V 2.5V @ 250µA 9.3 nC @ 10 V ±20V 334 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
    PMV62XN,215

    PMV62XN,215

    MOSFET N-CH SOT-23

    NXP USA Inc.

    		 3,742 -
    RFQ

    -

    		 * - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
    PMV65UN,215

    PMV65UN,215

    MOSFET N-CH 20V 2.2A TO236AB

    NXP USA Inc.

    		 5,308 -
    RFQ
    		PMV65UN,215

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 1.8V, 4.5V 76mOhm @ 2A, 4.5V 1V @ 250µA 3.9 nC @ 4.5 V ±8V 183 pF @ 10 V - 310mW (Ta), 2.17W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23 (TO-236AB)
    R5009FNX

    R5009FNX

    MOSFET N-CH 500V 9A TO220FM

    Rohm Semiconductor

    		 5,311 -
    RFQ
    		R5009FNX

    Datenblatt

         		- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 840mOhm @ 4.5A, 10V 4V @ 1mA 18 nC @ 10 V ±30V 630 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    R6012FNX

    R6012FNX

    MOSFET N-CH 600V 12A TO220FM

    Rohm Semiconductor

    		 8,634 -
    RFQ
    		R6012FNX

    Datenblatt

         		- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 510mOhm @ 6A, 10V 5V @ 1mA 35 nC @ 10 V ±30V 1300 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    IRFSL4510PBF

    IRFSL4510PBF

    MOSFET N-CH 100V 61A TO262

    Infineon Technologies

    		 9,236 -
    RFQ
    		IRFSL4510PBF

    Datenblatt

         		HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 61A (Tc) 10V 13.9mOhm @ 37A, 10V 4V @ 100µA 87 nC @ 10 V ±20V 3180 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
    IRFR4510PBF

    IRFR4510PBF

    MOSFET N CH 100V 56A DPAK

    Infineon Technologies

    		 2,280 -
    RFQ
    		IRFR4510PBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 13.9mOhm @ 38A, 10V 4V @ 100µA 81 nC @ 10 V ±20V 3031 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    IRFS4510PBF

    IRFS4510PBF

    MOSFET N-CH 100V 61A D2PAK

    Infineon Technologies

    		 5,692 -
    RFQ
    		IRFS4510PBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100 V 61A (Tc) 10V 13.9mOhm @ 37A, 10V 4V @ 100µA 87 nC @ 10 V ±20V 3180 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    IRFI4510GPBF

    IRFI4510GPBF

    MOSFET N CH 100V 35A TO220

    Infineon Technologies

    		 3,619 -
    RFQ
    		IRFI4510GPBF

    Datenblatt

         		HEXFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 13.5mOhm @ 21A, 10V 4V @ 100µA 81 nC @ 10 V ±20V 2998 pF @ 50 V - 42W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB Full-Pak
    AUIRF1404STRL

    AUIRF1404STRL

    MOSFET N-CH 40V 75A D2PAK

    Infineon Technologies

    		 7,020 -
    RFQ
    		AUIRF1404STRL

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    AUIRF3315STRL

    AUIRF3315STRL

    MOSFET N-CH 150V 21A D2PAK

    Infineon Technologies

    		 6,245 -
    RFQ
    		AUIRF3315STRL

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 10V 82mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    AUIRF7207QTR

    AUIRF7207QTR

    MOSFET P-CH 20V 5.4A 8SO

    Infineon Technologies

    		 8,164 -
    RFQ
    		AUIRF7207QTR

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.4A (Ta) 2.7V, 4.5V 60mOhm @ 5.4A, 4.5V 1.6V @ 250µA 22 nC @ 4.5 V ±12V 780 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    AUIRF7416QTR

    AUIRF7416QTR

    MOSFET P-CH 30V 10A 8SO

    Infineon Technologies

    		 4,085 -
    RFQ
    		AUIRF7416QTR

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 20mOhm @ 5.6A, 10V 2.04V @ 250µA 92 nC @ 10 V ±20V 1700 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    AUIRF7478QTR

    AUIRF7478QTR

    MOSFET N-CH 60V 7A 8SO

    Infineon Technologies

    		 9,934 -
    RFQ
    		AUIRF7478QTR

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 7A (Ta) 4.5V, 10V 26mOhm @ 4.2A, 10V 3V @ 250µA 31 nC @ 4.5 V ±20V 1740 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
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