FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
BUK7E2R6-60E,127

BUK7E2R6-60E,127

MOSFET N-CH 60V 120A I2PAK

Nexperia USA Inc.

6,467 -
RFQ
BUK7E2R6-60E,127

Datenblatt

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.6mOhm @ 25A, 10V 4V @ 1mA 158 nC @ 10 V ±20V 11180 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole I2PAK
BUK7E4R6-60E,127

BUK7E4R6-60E,127

MOSFET N-CH 60V 100A I2PAK

Nexperia USA Inc.

8,160 -
RFQ
BUK7E4R6-60E,127

Datenblatt

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 4.6mOhm @ 25A, 10V 4V @ 1mA 82 nC @ 10 V ±20V 6230 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole I2PAK
BUK9515-60E,127

BUK9515-60E,127

MOSFET N-CH 60V 54A TO220AB

NXP USA Inc.

3,398 -
RFQ

-

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 54A (Tc) 5V, 10V 13mOhm @ 15A, 10V 2.1V @ 1mA 20.5 nC @ 5 V ±10V 2651 pF @ 25 V - 96W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK951R6-30E,127

BUK951R6-30E,127

MOSFET N-CH 30V 120A TO220AB

NXP USA Inc.

6,511 -
RFQ

-

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 5V, 10V 1.4mOhm @ 25A, 10V 2.1V @ 1mA 113 nC @ 5 V ±10V 16150 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK951R9-40E,127

BUK951R9-40E,127

MOSFET N-CH 40V 120A TO220AB

NXP USA Inc.

4,362 -
RFQ
BUK951R9-40E,127

Datenblatt

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 5V, 10V 1.7mOhm @ 25A, 10V 2.1V @ 1mA 120 nC @ 5 V ±10V 16400 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK952R8-60E,127

BUK952R8-60E,127

MOSFET N-CH 60V 120A TO220AB

NXP USA Inc.

8,276 -
RFQ
BUK952R8-60E,127

Datenblatt

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 5V, 10V 2.6mOhm @ 25A, 10V 2.1V @ 1mA 120 nC @ 5 V ±10V 17450 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK953R2-40E,127

BUK953R2-40E,127

MOSFET N-CH 40V 100A TO220AB

NXP USA Inc.

2,296 -
RFQ
BUK953R2-40E,127

Datenblatt

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 5V, 10V 2.8mOhm @ 25A, 10V 2.1V @ 1mA 69.5 nC @ 5 V ±10V 9150 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK953R5-60E,127

BUK953R5-60E,127

MOSFET N-CH 60V 120A TO220AB

Nexperia USA Inc.

8,653 -
RFQ
BUK953R5-60E,127

Datenblatt

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 5V, 10V 3.4mOhm @ 25A, 10V 2.1V @ 1mA 95 nC @ 5 V ±10V 13490 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-220AB
BUK954R4-80E,127

BUK954R4-80E,127

MOSFET N-CH 80V 120A TO220AB

NXP USA Inc.

2,375 -
RFQ
BUK954R4-80E,127

Datenblatt

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 5V, 10V 4.2mOhm @ 25A, 10V 2.1V @ 1mA 123 nC @ 5 V ±10V 17130 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK956R1-100E,127

BUK956R1-100E,127

MOSFET N-CH 100V 120A TO220AB

NXP USA Inc.

7,919 -
RFQ
BUK956R1-100E,127

Datenblatt

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 5V, 10V 5.9mOhm @ 25A, 10V 2.1V @ 1mA 133 nC @ 5 V ±10V 17460 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK9E3R2-40E,127

BUK9E3R2-40E,127

MOSFET N-CH 40V 100A I2PAK

NXP USA Inc.

6,470 -
RFQ
BUK9E3R2-40E,127

Datenblatt

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 5V, 10V 2.8mOhm @ 25A, 10V 2.1V @ 1mA 69.5 nC @ 5 V ±10V 9150 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK
DMP1080UCB4-7

DMP1080UCB4-7

MOSFET P-CH 12V 3.3A U-WLB1010-4

Diodes Incorporated

6,592 -
RFQ
DMP1080UCB4-7

Datenblatt

- 4-UFBGA, WLBGA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12 V 3.3A (Ta) 1.5V, 4.5V 80mOhm @ 500mA, 4.5V 1V @ 250µA 5 nC @ 4.5 V -6V 350 pF @ 6 V - 820mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount U-WLB1010-4
BUK762R0-40E,118

BUK762R0-40E,118

MOSFET N-CH 40V 120A D2PAK

Nexperia USA Inc.

3,552 -
RFQ
BUK762R0-40E,118

Datenblatt

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2mOhm @ 25A, 10V 4V @ 1mA 109.2 nC @ 10 V ±20V 8500 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
BUK762R6-40E,118

BUK762R6-40E,118

MOSFET N-CH 40V 100A D2PAK

Nexperia USA Inc.

3,985 -
RFQ
BUK762R6-40E,118

Datenblatt

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.6mOhm @ 25A, 10V 4V @ 1mA 91 nC @ 10 V ±20V 7130 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
BUK954R8-60E,127

BUK954R8-60E,127

MOSFET N-CH 60V 100A TO220AB

Nexperia USA Inc.

7,267 -
RFQ
BUK954R8-60E,127

Datenblatt

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 5V, 10V 4.5mOhm @ 25A, 10V 2.1V @ 1mA 65 nC @ 5 V ±10V 9710 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-220AB
BUK9E1R8-40E,127

BUK9E1R8-40E,127

MOSFET N-CH 40V 120A I2PAK

NXP USA Inc.

6,383 -
RFQ
BUK9E1R8-40E,127

Datenblatt

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 5V, 10V 1.7mOhm @ 25A, 10V 2.1V @ 1mA 120 nC @ 5 V ±10V 16400 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK
PSMN4R6-100XS,127

PSMN4R6-100XS,127

MOSFET N-CH 100V 70.4A TO220F

NXP USA Inc.

8,113 -
RFQ
PSMN4R6-100XS,127

Datenblatt

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70.4A (Tc) 10V 4.6mOhm @ 15A, 10V 4V @ 1mA 153 nC @ 10 V ±20V 9900 pF @ 50 V - 63.8W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F
IPI020N06NAKSA1

IPI020N06NAKSA1

MOSFET N-CH 60V 29A/120A TO262

Infineon Technologies

3,416 -
RFQ
IPI020N06NAKSA1

Datenblatt

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 29A (Ta), 120A (Tc) 6V, 10V 2mOhm @ 100A, 10V 2.8V @ 143µA 106 nC @ 10 V ±20V 7800 pF @ 30 V - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3-1
IPD50R380CEBTMA1

IPD50R380CEBTMA1

MOSFET N-CH 500V 14.1A TO252-3

Infineon Technologies

6,740 -
RFQ
IPD50R380CEBTMA1

Datenblatt

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 500 V 14.1A (Tc) 13V 380mOhm @ 3.2A, 13V 3.5V @ 260µA 24.8 nC @ 10 V ±20V 584 pF @ 100 V - 73W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPA50R190CE

IPA50R190CE

MOSFET N-CH 500V 18.5A TO220-FP

Infineon Technologies

5,456 -
RFQ
IPA50R190CE

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 18.5A (Tc) 13V 190mOhm @ 6.2A, 13V 3.5V @ 510µA 47.2 nC @ 10 V ±20V 1137 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
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