FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IPW50R190CEFKSA1

IPW50R190CEFKSA1

MOSFET N-CH 500V 18.5A TO247-3

Infineon Technologies

5,059 -
RFQ
IPW50R190CEFKSA1

Datenblatt

CoolMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 18.5A (Tc) 13V 190mOhm @ 6.2A, 13V 3.5V @ 510µA 47.2 nC @ 10 V ±20V 1137 pF @ 100 V - 127W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
IPD50R800CEBTMA1

IPD50R800CEBTMA1

MOSFET N CH 500V 5A TO252

Infineon Technologies

6,928 -
RFQ
IPD50R800CEBTMA1

Datenblatt

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 13V 800mOhm @ 1.5A, 13V 3.5V @ 130µA 12.4 nC @ 10 V ±20V 280 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPD50R650CEBTMA1

IPD50R650CEBTMA1

MOSFET N-CH 500V 6.1A TO252-3

Infineon Technologies

9,463 -
RFQ
IPD50R650CEBTMA1

Datenblatt

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 500 V 6.1A (Tc) 13V 650mOhm @ 1.8A, 13V 3.5V @ 150µA 15 nC @ 10 V ±20V 342 pF @ 100 V - 47W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IRFS7437-7PPBF

IRFS7437-7PPBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies

8,533 -
RFQ
IRFS7437-7PPBF

Datenblatt

HEXFET®, StrongIRFET™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V 3.9V @ 150µA 225 nC @ 10 V ±20V 7437 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
IRFR7440PBF

IRFR7440PBF

MOSFET N CH 40V 90A DPAK

Infineon Technologies

4,277 -
RFQ
IRFR7440PBF

Datenblatt

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 6V, 10V 2.4mOhm @ 90A, 10V 3.9V @ 100µA 134 nC @ 10 V ±20V 4610 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFS7437PBF

IRFS7437PBF

MOSFET N CH 40V 195A D2PAK

Infineon Technologies

9,785 -
RFQ
IRFS7437PBF

Datenblatt

HEXFET®, StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.8mOhm @ 100A, 10V 3.9V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
IRFS7440PBF

IRFS7440PBF

MOSFET N CH 40V 120A D2PAK

Infineon Technologies

2,095 -
RFQ
IRFS7440PBF

Datenblatt

HEXFET®, StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 6V, 10V 2.5mOhm @ 100A, 10V 3.9V @ 100µA 135 nC @ 10 V ±20V 4730 pF @ 25 V - 208W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRF7820PBF

IRF7820PBF

MOSFET N CH 200V 3.7A 8-SO

Infineon Technologies

3,118 -
RFQ
IRF7820PBF

Datenblatt

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 200 V 3.7A (Ta) 10V 78mOhm @ 2.2A, 10V 5V @ 100µA 44 nC @ 10 V ±20V 1750 pF @ 100 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
FK3503010L

FK3503010L

MOSFET N-CH 30V 100MA SMINI3

Panasonic Electronic Components

7,309 -
RFQ
FK3503010L

Datenblatt

- SC-85 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 3Ohm @ 10mA, 4V 1.5V @ 1µA - ±12V 12 pF @ 3 V - 150mW (Ta) 150°C (TJ) - - Surface Mount SMini3-F2-B
FK8V03020L

FK8V03020L

MOSFET N CH 33V 14A WMINI8

Panasonic Electronic Components

9,191 -
RFQ
FK8V03020L

Datenblatt

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 33 V 14A (Ta) 4.5V, 10V 4.6mOhm @ 7A, 10V 3V @ 2.2mA 14 nC @ 4.5 V ±10V 1500 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount WMini8-F1
FK8V03060L

FK8V03060L

MOSFET N CH 33V 6.5A WMINI8

Panasonic Electronic Components

6,027 -
RFQ
FK8V03060L

Datenblatt

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 33 V 6.5A (Ta) 4.5V, 10V 20mOhm @ 3.3A, 10V 2.5V @ 0.48mA 3.8 nC @ 4.5 V ±20V 360 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount WMini8-F1
FK8V03030L

FK8V03030L

MOSFET N CH 33V 12A WMINI8

Panasonic Electronic Components

8,563 -
RFQ
FK8V03030L

Datenblatt

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 33 V 12A (Ta) 4.5V, 10V 7mOhm @ 6A, 10V 2.5V @ 1.73mA 10.2 nC @ 4.5 V ±20V 1100 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount WMini8-F1
FL6L52010L

FL6L52010L

MOSFET P-CH 20V 2A WSSMINI6-F1

Panasonic Electronic Components

6,734 -
RFQ
FL6L52010L

Datenblatt

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.8 V, 4V 120mOhm @ 1A, 4V 1.1V @ 1mA - ±10V 300 pF @ 10 V - 540mW (Ta) 125°C (TJ) - - Surface Mount WSSMini6-F1
FDMS8570SDC

FDMS8570SDC

MOSFET N-CH 25V 28A/60A DLCOOL56

onsemi

5,982 -
RFQ
FDMS8570SDC

Datenblatt

PowerTrench®, SyncFET™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 28A (Ta), 60A (Tc) 4.5V, 10V 2.8mOhm @ 28A, 10V 2.2V @ 1mA 42 nC @ 10 V ±12V 2825 pF @ 13 V Schottky Diode (Body) 3.3W (Ta), 59W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
IRF9383MTR1PBF

IRF9383MTR1PBF

MOSFET P-CH 30V 22A DIRECTFET

Infineon Technologies

7,708 -
RFQ
IRF9383MTR1PBF

Datenblatt

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 160A (Tc) 4.5V, 10V 2.9mOhm @ 22A, 10V 2.4V @ 150µA 130 nC @ 10 V ±20V 7305 pF @ 15 V - 2.1W (Ta), 113W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MX
IXTF03N400

IXTF03N400

MOSFET N-CH 4000V 300MA I4PAC

IXYS

2,597 -
RFQ

-

- i4-Pac™-5 (3 Leads) Tube Obsolete N-Channel MOSFET (Metal Oxide) 4000 V 300mA (Tc) 10V 300Ohm @ 150mA, 10V 4V @ 250µA 16.3 nC @ 10 V ±20V 435 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS i4-PAC™
IRFB4510GPBF

IRFB4510GPBF

MOSFET N CH 100V 62A TO-220AB

Infineon Technologies

3,858 -
RFQ
IRFB4510GPBF

Datenblatt

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 62A (Tc) 10V 13.5mOhm @ 37A, 10V 4V @ 100µA 87 nC @ 10 V ±20V 3180 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
AUIRF6218STRL

AUIRF6218STRL

MOSFET P-CH 150V 27A D2PAK

Infineon Technologies

9,502 -
RFQ
AUIRF6218STRL

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) 10V 150mOhm @ 16A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 2210 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
AUIRFR4292

AUIRFR4292

MOSFET N-CH 250V 9.3A DPAK

Infineon Technologies

9,935 -
RFQ
AUIRFR4292

Datenblatt

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 9.3A (Tc) 10V 345mOhm @ 5.6A, 10V 5V @ 50µA 20 nC @ 10 V ±20V 705 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
AUIRFZ48N

AUIRFZ48N

MOSFET N-CH 55V 69A TO220AB

Infineon Technologies

3,172 -
RFQ
AUIRFZ48N

Datenblatt

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 69A (Tc) 10V 14mOhm @ 40A, 10V 4V @ 100µA 63 nC @ 10 V ±20V 1900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
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