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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    AUIRF7805QTR

    AUIRF7805QTR

    MOSFET N CH 30V 13A 8-SO

    Infineon Technologies

    		 8,053 -
    RFQ
    		AUIRF7805QTR

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V 11mOhm @ 7A, 4.5V 3V @ 250µA 31 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    AUIRFBA1405

    AUIRFBA1405

    MOSFET N-CH 55V 95A SUPER-220

    Infineon Technologies

    		 4,752 -
    RFQ
    		AUIRFBA1405

    Datenblatt

         		HEXFET® TO-273AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 95A (Tc) 10V 5mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) - - Through Hole SUPER-220™ (TO-273AA)
    AUIRF7805Q

    AUIRF7805Q

    MOSFET N-CH 30V 13A 8SO

    Infineon Technologies

    		 5,601 -
    RFQ
    		AUIRF7805Q

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V 11mOhm @ 7A, 4.5V 3V @ 250µA 31 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    AUIRFU540Z

    AUIRFU540Z

    MOSFET N-CH 100V 35A IPAK

    Infineon Technologies

    		 3,749 -
    RFQ
    		AUIRFU540Z

    Datenblatt

         		HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 28.5mOhm @ 21A, 10V 4V @ 50µA 59 nC @ 10 V ±20V 1690 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    AUIRF7484QTR

    AUIRF7484QTR

    MOSFET N CH 40V 14A 8-SO

    Infineon Technologies

    		 7,942 -
    RFQ
    		AUIRF7484QTR

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta) 7V 10mOhm @ 14A, 7V 2V @ 250µA 100 nC @ 7 V ±8V 3520 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    AUIRF7484Q

    AUIRF7484Q

    MOSFET N CH 40V 14A 8-SO

    Infineon Technologies

    		 2,466 -
    RFQ
    		AUIRF7484Q

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta) 7V 10mOhm @ 14A, 7V 2V @ 250µA 100 nC @ 7 V ±8V 3520 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    AUIRF6215S

    AUIRF6215S

    MOSFET P-CH 150V 13A D2PAK

    Infineon Technologies

    		 2,501 -
    RFQ
    		AUIRF6215S

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    AUIRF6218S

    AUIRF6218S

    MOSFET P-CH 150V 27A D2PAK

    Infineon Technologies

    		 3,108 -
    RFQ
    		AUIRF6218S

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete P-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) 10V 150mOhm @ 16A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 2210 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    AUIRLR024Z

    AUIRLR024Z

    MOSFET N CH 55V 16A DPAK

    Infineon Technologies

    		 6,039 -
    RFQ
    		AUIRLR024Z

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 16A (Tc) 4.5V, 10V 58mOhm @ 9.6A, 10V 3V @ 250µA 9.9 nC @ 5 V ±16V 380 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    AUIRLL024Z

    AUIRLL024Z

    MOSFET N-CH 55V 5A SOT223

    Infineon Technologies

    		 2,872 -
    RFQ
    		AUIRLL024Z

    Datenblatt

         		HEXFET® TO-261-4, TO-261AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 5A (Ta) 4.5V, 10V 60mOhm @ 3A, 10V 3V @ 250µA 11 nC @ 5 V ±16V 380 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
    AUIRLU024Z

    AUIRLU024Z

    MOSFET N-CH 55V 16A IPAK

    Infineon Technologies

    		 2,245 -
    RFQ
    		AUIRLU024Z

    Datenblatt

         		HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 16A (Tc) 4.5V, 10V 58mOhm @ 9.6A, 10V 3V @ 250µA 9.9 nC @ 5 V ±16V 380 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    AUIRLL2705

    AUIRLL2705

    MOSFET N-CH 55V 5.2A SOT223

    Infineon Technologies

    		 8,607 -
    RFQ
    		AUIRLL2705

    Datenblatt

         		HEXFET® TO-261-4, TO-261AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 5.2A (Ta) 4V, 10V 40mOhm @ 3.8A, 10V 2V @ 250µA 48 nC @ 10 V ±16V 870 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
    AUIRF5210S

    AUIRF5210S

    MOSFET P-CH 100V 38A D2PAK

    Infineon Technologies

    		 2,301 -
    RFQ
    		AUIRF5210S

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 10V 60mOhm @ 38A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 2780 pF @ 25 V - 3.1W (Ta), 170W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    IRFB7434GPBF

    IRFB7434GPBF

    MOSFET N CH 40V 195A TO220AB

    Infineon Technologies

    		 7,686 -
    RFQ
    		IRFB7434GPBF

    Datenblatt

         		HEXFET®, StrongIRFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - - - - - Through Hole TO-220-3
    IRFB7446GPBF

    IRFB7446GPBF

    MOSFET N CH 40V 120A TO220AB

    Infineon Technologies

    		 5,526 -
    RFQ
    		IRFB7446GPBF

    Datenblatt

         		HEXFET®, StrongIRFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 6V, 10V 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) - - - Through Hole TO-220AB
    AUIRF4905STRL

    AUIRF4905STRL

    MOSFET P-CH 55V 42A D2PAK

    Infineon Technologies

    		 2,575 -
    RFQ
    		AUIRF4905STRL

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 20mOhm @ 42A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3500 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3
    IRFU3607-701PBF

    IRFU3607-701PBF

    MOSFET N-CH 75V 56A IPAK

    Infineon Technologies

    		 2,294 -
    RFQ
    		IRFU3607-701PBF

    Datenblatt

         		HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
    IRFP4332-203PBF

    IRFP4332-203PBF

    MOSFET N-CH 250V 57A TO247AC

    Infineon Technologies

    		 9,747 -
    RFQ
    		IRFP4332-203PBF

    Datenblatt

         		HEXFET® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 57A (Tc) 10V 33mOhm @ 35A, 10V 5V @ 250µA 150 nC @ 10 V ±30V 5860 pF @ 25 V - 360W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247AC
    IRFU3607TRL701P

    IRFU3607TRL701P

    MOSFET N CH 75V 56A IPAK

    Infineon Technologies

    		 7,855 -
    RFQ
    		IRFU3607TRL701P

    Datenblatt

         		HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
    AUIRFR540Z

    AUIRFR540Z

    MOSFET N-CH 100V 35A DPAK

    Infineon Technologies

    		 8,032 -
    RFQ
    		AUIRFR540Z

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 28.5mOhm @ 21A, 10V 4V @ 50µA 59 nC @ 10 V ±20V 1690 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
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