FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
AUIRFS4310

AUIRFS4310

MOSFET N-CH 100V 75A D2PAK

Infineon Technologies

7,344 -
RFQ
AUIRFS4310

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRFS4610

AUIRFS4610

MOSFET N-CH 100V 73A D2PAK

Infineon Technologies

2,956 -
RFQ
AUIRFS4610

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRFSL4310

AUIRFSL4310

MOSFET N-CH 100V 75A TO262

Infineon Technologies

6,752 -
RFQ
AUIRFSL4310

Datenblatt

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) - 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V - 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
AUIRFU4104

AUIRFU4104

MOSFET N-CH 40V 42A IPAK

Infineon Technologies

6,891 -
RFQ
AUIRFU4104

Datenblatt

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
AUIRFZ44VZS

AUIRFZ44VZS

MOSFET N-CH 60V 57A D2PAK

Infineon Technologies

4,200 -
RFQ
AUIRFZ44VZS

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 12mOhm @ 34A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1690 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRFZ44VZSTRL

AUIRFZ44VZSTRL

MOSFET N-CH 60V 57A D2PAK

Infineon Technologies

6,326 -
RFQ
AUIRFZ44VZSTRL

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 12mOhm @ 34A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1690 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRFZ44Z

AUIRFZ44Z

MOSFET N-CH 55V 51A TO220

Infineon Technologies

9,029 -
RFQ
AUIRFZ44Z

Datenblatt

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.9mOhm @ 31A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 1420 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
AUIRFZ44ZS

AUIRFZ44ZS

MOSFET N-CH 55V 51A D2PAK

Infineon Technologies

8,170 -
RFQ
AUIRFZ44ZS

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.9mOhm @ 31A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 1420 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRFZ44ZSTRL

AUIRFZ44ZSTRL

MOSFET N-CH 55V 51A D2PAK

Infineon Technologies

3,764 -
RFQ
AUIRFZ44ZSTRL

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.9mOhm @ 31A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 1420 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRFZ48Z

AUIRFZ48Z

MOSFET N-CH 55V 61A TO220

Infineon Technologies

8,310 -
RFQ
AUIRFZ48Z

Datenblatt

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 61A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
AUIRFZ48ZS

AUIRFZ48ZS

MOSFET N-CH 55V 61A D2PAK

Infineon Technologies

4,259 -
RFQ
AUIRFZ48ZS

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 61A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRL1404Z

AUIRL1404Z

MOSFET N-CH 40V 160A TO220

Infineon Technologies

2,366 -
RFQ
AUIRL1404Z

Datenblatt

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
AUIRL1404ZL

AUIRL1404ZL

MOSFET N-CH 40V 160A TO262

Infineon Technologies

5,054 -
RFQ
AUIRL1404ZL

Datenblatt

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
AUIRL1404ZS

AUIRL1404ZS

MOSFET N-CH 40V 160A D2PAK

Infineon Technologies

8,171 -
RFQ
AUIRL1404ZS

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRL3705ZSTRL

AUIRL3705ZSTRL

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies

7,694 -
RFQ
AUIRL3705ZSTRL

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V - 2880 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRLR024N

AUIRLR024N

MOSFET N-CH 55V 17A DPAK

Infineon Technologies

3,959 -
RFQ
AUIRLR024N

Datenblatt

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 4V, 10V 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
AUIRLR024NTRL

AUIRLR024NTRL

MOSFET N-CH 55V 17A DPAK

Infineon Technologies

2,711 -
RFQ
AUIRLR024NTRL

Datenblatt

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 4V, 10V 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
AUIRLR2703

AUIRLR2703

MOSFET N-CH 30V 20A DPAK

Infineon Technologies

7,678 -
RFQ
AUIRLR2703

Datenblatt

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 45mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
AUIRLR2703TRL

AUIRLR2703TRL

MOSFET N-CH 30V 20A DPAK

Infineon Technologies

4,260 -
RFQ
AUIRLR2703TRL

Datenblatt

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) - 45mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V - 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
AUIRLR2905

AUIRLR2905

MOSFET N-CH 55V 42A DPAK

Infineon Technologies

4,265 -
RFQ
AUIRLR2905

Datenblatt

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
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