FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IPA60R520E6XKSA1

IPA60R520E6XKSA1

MOSFET N-CH 600V 8.1A TO220-FP

Infineon Technologies

7,725 -
RFQ
IPA60R520E6XKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 8.1A (Tc) 10V 520mOhm @ 2.8A, 10V 3.5V @ 230µA 23.4 nC @ 10 V ±20V 512 pF @ 100 V - 29W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPA60R750E6XKSA1

IPA60R750E6XKSA1

MOSFET N-CH 600V 5.7A TO220-FP

Infineon Technologies

6,793 -
RFQ
IPA60R750E6XKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.7A (Tc) 10V 750mOhm @ 2A, 10V 3.5V @ 170µA 17.2 nC @ 10 V ±20V 373 pF @ 100 V - 27W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPD60R450E6BTMA1

IPD60R450E6BTMA1

MOSFET N-CH 600V 9.2A TO252-3

Infineon Technologies

8,792 -
RFQ
IPD60R450E6BTMA1

Datenblatt

CoolMOS™ E6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 450mOhm @ 3.4A, 10V 3.5V @ 280µA 28 nC @ 10 V ±20V 620 pF @ 100 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPD60R600E6

IPD60R600E6

MOSFET N-CH 600V 7.3A TO252-3

Infineon Technologies

5,582 -
RFQ
IPD60R600E6

Datenblatt

CoolMOS™ E6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPD60R750E6BTMA1

IPD60R750E6BTMA1

MOSFET N-CH 600V 5.7A TO252-3

Infineon Technologies

7,535 -
RFQ
IPD60R750E6BTMA1

Datenblatt

CoolMOS™ E6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 600 V 5.7A (Tc) 10V 750mOhm @ 2A, 10V 3.5V @ 170µA 17.2 nC @ 10 V ±20V 373 pF @ 100 V - 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPP60R450E6XKSA1

IPP60R450E6XKSA1

MOSFET N-CH 600V 9.2A TO220-3

Infineon Technologies

2,929 -
RFQ
IPP60R450E6XKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 450mOhm @ 3.4A, 10V 3.5V @ 280µA 28 nC @ 10 V ±20V 620 pF @ 100 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPP60R520E6XKSA1

IPP60R520E6XKSA1

MOSFET N-CH 600V 8.1A TO220-3

Infineon Technologies

6,039 -
RFQ
IPP60R520E6XKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 8.1A (Tc) 10V 520mOhm @ 2.8A, 10V 3.5V @ 230µA 23.4 nC @ 10 V ±20V 512 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPP60R600E6XKSA1

IPP60R600E6XKSA1

MOSFET N-CH 600V 7.3A TO220-3

Infineon Technologies

3,408 -
RFQ
IPP60R600E6XKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPP60R750E6XKSA1

IPP60R750E6XKSA1

MOSFET N-CH 600V 5.7A TO220-3

Infineon Technologies

4,925 -
RFQ
IPP60R750E6XKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.7A (Tc) 10V 750mOhm @ 2A, 10V 3.5V @ 170µA 17.2 nC @ 10 V ±20V 373 pF @ 100 V - 48W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPP65R280E6XKSA1

IPP65R280E6XKSA1

MOSFET N-CH 650V 13.8A TO220-3

Infineon Technologies

4,400 -
RFQ
IPP65R280E6XKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V 3.5V @ 440µA 45 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPP65R380E6XKSA1

IPP65R380E6XKSA1

MOSFET N-CH 650V 10.6A TO220-3

Infineon Technologies

5,227 -
RFQ
IPP65R380E6XKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPW60R280E6FKSA1

IPW60R280E6FKSA1

MOSFET N-CH 600V 13.8A TO247-3

Infineon Technologies

2,933 -
RFQ
IPW60R280E6FKSA1

Datenblatt

CoolMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) 10V 280mOhm @ 6.5A, 10V 3.5V @ 430µA 43 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
IRLR6225PBF

IRLR6225PBF

MOSFET N-CH 20V 100A DPAK

Infineon Technologies

4,987 -
RFQ
IRLR6225PBF

Datenblatt

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) 2.5V, 4.5V 4mOhm @ 21A, 4.5V 1.1V @ 50µA 72 nC @ 4.5 V ±12V 3770 pF @ 10 V - 63W (Tc) -50°C ~ 150°C (TJ) - - Surface Mount DPAK
SI1072X-T1-GE3

SI1072X-T1-GE3

MOSFET N-CH 30V SC89-6

Vishay Siliconix

6,136 -
RFQ
SI1072X-T1-GE3

Datenblatt

TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 1.3A (Ta) 4.5V, 10V 93mOhm @ 1.3A, 10V 3V @ 250µA 8.3 nC @ 10 V ±20V 280 pF @ 15 V - 236mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-89 (SOT-563F)
IPD60R1K4C6

IPD60R1K4C6

MOSFET N-CH 600V 3.2A TO252-3

Infineon Technologies

5,718 -
RFQ
IPD60R1K4C6

Datenblatt

CoolMOS™ C6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V - 28.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPD60R2K0C6BTMA1

IPD60R2K0C6BTMA1

MOSFET N-CH 600V 2.4A TO252-3

Infineon Technologies

8,184 -
RFQ
IPD60R2K0C6BTMA1

Datenblatt

CoolMOS™ C6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 2Ohm @ 760mA, 10V 3.5V @ 60µA 6.7 nC @ 10 V ±20V 140 pF @ 100 V - 22.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
BUK754R0-40C,127

BUK754R0-40C,127

MOSFET N-CH 40V 100A TO220AB

Nexperia USA Inc.

5,765 -
RFQ
BUK754R0-40C,127

Datenblatt

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 4mOhm @ 25A, 10V 4V @ 1mA 97 nC @ 10 V ±20V 5708 pF @ 25 V - 203W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK9520-100B,127

BUK9520-100B,127

MOSFET N-CH 100V 63A TO220AB

Nexperia USA Inc.

2,274 -
RFQ
BUK9520-100B,127

Datenblatt

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 63A (Tc) 4.5V, 10V 18.5mOhm @ 25A, 10V 2V @ 1mA 53.4 nC @ 5 V ±15V 5657 pF @ 25 V - 203W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK7Y20-30B,115

BUK7Y20-30B,115

MOSFET N-CH 30V 39.5A LFPAK56

Nexperia USA Inc.

8,078 -
RFQ
BUK7Y20-30B,115

Datenblatt

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 39.5A (Tc) 10V 20mOhm @ 20A, 10V 4V @ 1mA 11.2 nC @ 10 V ±20V 688 pF @ 25 V - 59W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
BUK7Y35-55B,115

BUK7Y35-55B,115

MOSFET N-CH 55V 28.43A LFPAK56

NXP USA Inc.

7,566 -
RFQ
BUK7Y35-55B,115

Datenblatt

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 28.43A (Tc) 10V 35mOhm @ 15A, 10V 4V @ 1mA 13.1 nC @ 10 V ±20V 781 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
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