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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    AUIRF1404ZS

    AUIRF1404ZS

    MOSFET N-CH 40V 160A D2PAK

    Infineon Technologies

    		 8,710 -
    RFQ
    		AUIRF1404ZS

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 3.7mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 4340 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    AUIRF1405ZS

    AUIRF1405ZS

    MOSFET N-CH 55V 150A D2PAK

    Infineon Technologies

    		 5,006 -
    RFQ
    		AUIRF1405ZS

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 150A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    AUIRF2804

    AUIRF2804

    MOSFET N-CH 40V 195A TO220

    Infineon Technologies

    		 4,899 -
    RFQ
    		AUIRF2804

    Datenblatt

         		HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2.3mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    AUIRF2804S

    AUIRF2804S

    MOSFET N-CH 40V 195A D2PAK

    Infineon Technologies

    		 7,478 -
    RFQ
    		AUIRF2804S

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    AUIRF2804S-7P

    AUIRF2804S-7P

    MOSFET N-CH 40V 240A D2PAK

    Infineon Technologies

    		 4,693 -
    RFQ
    		AUIRF2804S-7P

    Datenblatt

         		HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
    AUIRF2907Z

    AUIRF2907Z

    MOSFET N-CH 75V 75A TO220AB

    Infineon Technologies

    		 7,031 -
    RFQ
    		AUIRF2907Z

    Datenblatt

         		HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    AUIRF2907ZS7PTL

    AUIRF2907ZS7PTL

    MOSFET N-CH 75V 180A D2PAK

    Infineon Technologies

    		 3,077 -
    RFQ
    		AUIRF2907ZS7PTL

    Datenblatt

         		HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75 V 180A (Tc) 10V 3.8mOhm @ 110A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7580 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
    AUIRF3205ZS

    AUIRF3205ZS

    MOSFET N-CH 55V 75A D2PAK

    Infineon Technologies

    		 8,294 -
    RFQ
    		AUIRF3205ZS

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    AUIRF3710Z

    AUIRF3710Z

    MOSFET N-CH 100V 59A TO220AB

    Infineon Technologies

    		 6,237 -
    RFQ
    		AUIRF3710Z

    Datenblatt

         		HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 18mOhm @ 35A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    AUIRF3710ZS

    AUIRF3710ZS

    MOSFET N-CH 100V 59A D2PAK

    Infineon Technologies

    		 4,306 -
    RFQ
    		AUIRF3710ZS

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 18mOhm @ 35A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    AUIRF3805L-7P

    AUIRF3805L-7P

    MOSFET N-CH 55V 160A TO262

    Infineon Technologies

    		 8,817 -
    RFQ
    		AUIRF3805L-7P

    Datenblatt

         		HEXFET® TO-262-7 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 2.6mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7820 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
    AUIRF3805S

    AUIRF3805S

    MOSFET N-CH 55V 160A D2PAK

    Infineon Technologies

    		 5,167 -
    RFQ
    		AUIRF3805S

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V 7960 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    AUIRF3805S-7P

    AUIRF3805S-7P

    MOSFET N-CH 55V 160A D2PAK

    Infineon Technologies

    		 5,387 -
    RFQ
    		AUIRF3805S-7P

    Datenblatt

         		HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 2.6mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7820 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
    AUIRF4104S

    AUIRF4104S

    MOSFET N-CH 40V 75A D2PAK

    Infineon Technologies

    		 9,432 -
    RFQ
    		AUIRF4104S

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.5mOhm @ 75A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3000 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    AUIRF4905

    AUIRF4905

    MOSFET P-CH 55V 74A TO220AB

    Infineon Technologies

    		 5,000 -
    RFQ
    		AUIRF4905

    Datenblatt

         		HEXFET® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 55 V 74A (Tc) 10V 20mOhm @ 38A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3400 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    AUIRF540ZS

    AUIRF540ZS

    MOSFET N-CH 100V 36A D2PAK

    Infineon Technologies

    		 2,704 -
    RFQ
    		AUIRF540ZS

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 10V 26.5mOhm @ 22A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1770 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    AUIRF540ZSTRL

    AUIRF540ZSTRL

    MOSFET N-CH 100V 36A D2PAK

    Infineon Technologies

    		 4,522 -
    RFQ
    		AUIRF540ZSTRL

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 10V 26.5mOhm @ 22A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1770 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    AUIRF7665S2TR

    AUIRF7665S2TR

    MOSFET N-CH 100V 4.1A DIRECTFET

    Infineon Technologies

    		 4,499 -
    RFQ
    		AUIRF7665S2TR

    Datenblatt

         		HEXFET® DirectFET™ Isometric SB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 4.1A (Ta), 14.4A (Tc) 10V 62mOhm @ 8.9A, 10V 5V @ 25µA 13 nC @ 10 V ±20V 515 pF @ 25 V - 2.4W (Ta), 30W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DIRECTFET SB
    AUIRF7738L2TR

    AUIRF7738L2TR

    MOSFET N-CH 40V 35A DIRECTFET

    Infineon Technologies

    		 6,929 -
    RFQ
    		AUIRF7738L2TR

    Datenblatt

         		HEXFET® DirectFET™ Isometric L6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 130A (Tc) 10V 1.6mOhm @ 109A, 10V 4V @ 250µA 194 nC @ 10 V ±20V 7471 pF @ 25 V - 3.3W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DIRECTFET L6
    AUIRFB3207

    AUIRFB3207

    MOSFET N-CH 75V 75A TO220AB

    Infineon Technologies

    		 3,149 -
    RFQ
    		AUIRFB3207

    Datenblatt

         		HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7600 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
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