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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    BUK654R6-55C,127

    BUK654R6-55C,127

    MOSFET N-CH 55V 100A TO220AB

    NXP USA Inc.

    		 9,828 -
    RFQ

    -

    		 TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 4.5V, 10V 5.4mOhm @ 25A, 10V 2.8V @ 1mA 124 nC @ 10 V ±16V 7750 pF @ 25 V - 204W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    BUK6E2R0-30C,127

    BUK6E2R0-30C,127

    MOSFET N-CH 30V 120A I2PAK

    Nexperia USA Inc.

    		 2,365 -
    RFQ
    		BUK6E2R0-30C,127

    Datenblatt

         		TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 10V 2.2mOhm @ 25A, 10V 2.8V @ 1mA 229 nC @ 10 V ±16V 14964 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole I2PAK
    BUK6E2R3-40C,127

    BUK6E2R3-40C,127

    MOSFET N-CH 40V 120A I2PAK

    Nexperia USA Inc.

    		 4,340 -
    RFQ
    		BUK6E2R3-40C,127

    Datenblatt

         		TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 25A, 10V 2.8V @ 1mA 260 nC @ 10 V ±16V 15100 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole I2PAK
    BUK6E3R2-55C,127

    BUK6E3R2-55C,127

    MOSFET N-CH 55V 120A I2PAK

    Nexperia USA Inc.

    		 4,607 -
    RFQ
    		BUK6E3R2-55C,127

    Datenblatt

         		TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 3.2mOhm @ 25A, 10V 2.8V @ 1mA 258 nC @ 10 V ±16V 15300 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole I2PAK
    PSMN7R0-100ES,127

    PSMN7R0-100ES,127

    MOSFET N-CH 100V 100A I2PAK

    Nexperia USA Inc.

    		 8,015 -
    RFQ
    		PSMN7R0-100ES,127

    Datenblatt

         		- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 6.8mOhm @ 15A, 10V 4V @ 1mA 125 nC @ 10 V ±20V 6686 pF @ 50 V - 269W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK
    IRFR9024TRRPBF

    IRFR9024TRRPBF

    MOSFET P-CH 60V 8.8A DPAK

    Vishay Siliconix

    		 8,253 -
    RFQ
    		IRFR9024TRRPBF

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 8.8A (Tc) 10V 280mOhm @ 5.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    IRLZ34SPBF

    IRLZ34SPBF

    MOSFET N-CH 60V 30A TO263

    Vishay Siliconix

    		 7,222 -
    RFQ
    		IRLZ34SPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4V, 5V 50mOhm @ 18A, 5V 2V @ 250µA 35 nC @ 5 V ±10V 1600 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    SI1031X-T1-GE3

    SI1031X-T1-GE3

    MOSFET P-CH 20V 155MA SC75A

    Vishay Siliconix

    		 9,352 -
    RFQ
    		SI1031X-T1-GE3

    Datenblatt

         		TrenchFET® SC-75, SOT-416 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 155mA (Ta) 1.5V, 4.5V 8Ohm @ 150mA, 4.5V 1.2V @ 250µA 1.5 nC @ 4.5 V ±6V - - 300mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-75A
    SI1303DL-T1-GE3

    SI1303DL-T1-GE3

    MOSFET P-CH 20V 670MA SC70-3

    Vishay Siliconix

    		 7,096 -
    RFQ

    -

    		 TrenchFET® SC-70, SOT-323 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 670mA (Ta) 2.5V, 4.5V 430mOhm @ 1A, 4.5V 1.4V @ 250µA 2.2 nC @ 4.5 V ±12V - - 290mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-3
    SI1404BDH-T1-E3

    SI1404BDH-T1-E3

    MOSFET N-CH 30V 1.9A/2.37A SC70

    Vishay Siliconix

    		 5,423 -
    RFQ

    -

    		 TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta), 2.37A (Tc) 2.5V, 4.5V 238mOhm @ 1.9A, 4.5V 1.3V @ 250µA 2.7 nC @ 4.5 V ±12V 100 pF @ 15 V - 1.32W (Ta), 2.28W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    SI1404BDH-T1-GE3

    SI1404BDH-T1-GE3

    MOSFET N-CH 30V 1.9A/2.37A SC70

    Vishay Siliconix

    		 3,829 -
    RFQ

    -

    		 TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta), 2.37A (Tc) 2.5V, 4.5V 238mOhm @ 1.9A, 4.5V 1.3V @ 250µA 2.7 nC @ 4.5 V ±12V 100 pF @ 15 V - 1.32W (Ta), 2.28W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    SI1405DL-T1-GE3

    SI1405DL-T1-GE3

    MOSFET P-CH 8V 1.6A SC70-6

    Vishay Siliconix

    		 8,877 -
    RFQ

    -

    		 TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 8 V 1.6A (Ta) 1.8V, 4.5V 125mOhm @ 1.8A, 4.5V 450mV @ 250µA (Min) 7 nC @ 4.5 V ±8V - - 568mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    SI1406DH-T1-E3

    SI1406DH-T1-E3

    MOSFET N-CH 20V 3.1A SC70-6

    Vishay Siliconix

    		 6,898 -
    RFQ
    		SI1406DH-T1-E3

    Datenblatt

         		TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 3.1A (Ta) 1.8V, 4.5V 65mOhm @ 3.9A, 4.5V 1.2V @ 250µA 7.5 nC @ 4.5 V ±8V - - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    SI1431DH-T1-E3

    SI1431DH-T1-E3

    MOSFET P-CH 30V 1.7A SC70-6

    Vishay Siliconix

    		 5,859 -
    RFQ

    -

    		 TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 1.7A (Ta) 4.5V, 10V 200mOhm @ 2A, 10V 3V @ 100µA 4 nC @ 4.5 V ±20V - - 950mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    SI1431DH-T1-GE3

    SI1431DH-T1-GE3

    MOSFET P-CH 30V 1.7A SC70-6

    Vishay Siliconix

    		 6,601 -
    RFQ

    -

    		 TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 1.7A (Ta) 4.5V, 10V 200mOhm @ 2A, 10V 3V @ 100µA 4 nC @ 4.5 V ±20V - - 950mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    SI1433DH-T1-GE3

    SI1433DH-T1-GE3

    MOSFET P-CH 30V 1.9A SC70-6

    Vishay Siliconix

    		 5,429 -
    RFQ

    -

    		 TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta) 4.5V, 10V 150mOhm @ 2.2A, 10V 3V @ 100µA 5 nC @ 4.5 V ±20V - - 950mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    SI2303BDS-T1-GE3

    SI2303BDS-T1-GE3

    MOSFET P-CH 30V 1.49A SOT23-3

    Vishay Siliconix

    		 5,341 -
    RFQ

    -

    		 - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 1.49A (Ta) 4.5V, 10V 200mOhm @ 1.7A, 10V 3V @ 250µA 10 nC @ 10 V ±20V 180 pF @ 15 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
    SI2335DS-T1-GE3

    SI2335DS-T1-GE3

    MOSFET P-CH 12V 3.2A SOT23-3

    Vishay Siliconix

    		 8,420 -
    RFQ

    -

    		 TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12 V 3.2A (Ta) 1.8V, 4.5V 51mOhm @ 4A, 4.5V 450mV @ 250µA (Min) 15 nC @ 4.5 V ±8V 1225 pF @ 6 V - 750mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
    SI3424DV-T1-GE3

    SI3424DV-T1-GE3

    MOSFET N-CH 30V 5A 6TSOP

    Vishay Siliconix

    		 8,079 -
    RFQ

    -

    		 TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 4.5V, 10V 28mOhm @ 6.7A, 10V 800mV @ 250µA (Min) 18 nC @ 10 V ±20V - - 1.14W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
    SI3433BDV-T1-GE3

    SI3433BDV-T1-GE3

    MOSFET P-CH 20V 4.3A 6TSOP

    Vishay Siliconix

    		 5,135 -
    RFQ

    -

    		 TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.3A (Ta) 1.8V, 4.5V 42mOhm @ 5.6A, 4.5V 850mV @ 250µA 18 nC @ 4.5 V ±8V - - 1.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
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