FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
RDX060N60FU6

RDX060N60FU6

MOSFET N-CH 600V 6A TO220FM

Rohm Semiconductor

5,186 -
RFQ
RDX060N60FU6

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6A (Ta) 10V 1.2Ohm @ 3A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 950 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220FM
RDX080N50FU6

RDX080N50FU6

MOSFET N-CH 500V 8A TO220FM

Rohm Semiconductor

5,441 -
RFQ
RDX080N50FU6

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Ta) 10V 850mOhm @ 4A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 920 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220FM
RDX100N60FU6

RDX100N60FU6

MOSFET N-CH 600V 10A TO220FM

Rohm Semiconductor

9,651 -
RFQ
RDX100N60FU6

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Ta) 10V 650mOhm @ 5A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 1600 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220FM
RDX120N50FU6

RDX120N50FU6

MOSFET N-CH 500V 12A TO220FM

Rohm Semiconductor

5,930 -
RFQ
RDX120N50FU6

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Ta) 10V 500mOhm @ 6A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 1600 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220FM
RSS065N06FU6TB

RSS065N06FU6TB

MOSFET N-CH 60V 6.5A 8SOP

Rohm Semiconductor

6,698 -
RFQ
RSS065N06FU6TB

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 6.5A (Ta) 4V, 10V 37mOhm @ 6.5A, 10V 2.5V @ 1mA 16 nC @ 5 V 20V 900 pF @ 10 V - 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
FDP24N40

FDP24N40

MOSFET N-CH 400V 24A TO220-3

onsemi

5,699 -
RFQ
FDP24N40

Datenblatt

UniFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 400 V 24A (Tc) 10V 175mOhm @ 12A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 3020 pF @ 25 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
ZXMN2F34MATA

ZXMN2F34MATA

MOSFET N-CH 20V 4A DFN322

Diodes Incorporated

6,401 -
RFQ
ZXMN2F34MATA

Datenblatt

- 3-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 2.5V, 4.5V 60mOhm @ 2.5A, 4.5V 1.5V @ 250µA 2.8 nC @ 4.5 V ±12V 277 pF @ 10 V - 1.35W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount DFN322
IRFR3706CPBF

IRFR3706CPBF

MOSFET N-CH 20V 75A DPAK

Infineon Technologies

4,911 -
RFQ
IRFR3706CPBF

Datenblatt

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 2.8V, 10V 9mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRF8707PBF

IRF8707PBF

MOSFET N-CH 30V 11A 8SO

Infineon Technologies

3,351 -
RFQ
IRF8707PBF

Datenblatt

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 11.9mOhm @ 11A, 10V 2.35V @ 25µA 9.3 nC @ 4.5 V ±20V 760 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7459PBF

IRF7459PBF

MOSFET N-CH 20V 12A 8SO

Infineon Technologies

8,024 -
RFQ
IRF7459PBF

Datenblatt

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 20 V 12A (Ta) 2.8V, 10V 9mOhm @ 12A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2480 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRL3713SPBF

IRL3713SPBF

MOSFET N-CH 30V 260A D2PAK

Infineon Technologies

4,068 -
RFQ
IRL3713SPBF

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 260A (Tc) 4.5V, 10V 3mOhm @ 38A, 10V 2.5V @ 250µA 110 nC @ 4.5 V ±20V 5890 pF @ 15 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
94-3660PBF

94-3660PBF

MOSFET N-CH 100V 4.5A 8SO

Infineon Technologies

2,269 -
RFQ
94-3660PBF

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tube Active N-Channel MOSFET (Metal Oxide) 100 V 4.5A (Ta) - 60mOhm @ 2.7A, 10V 5.5V @ 250µA 50 nC @ 10 V - 930 pF @ 25 V - - - - - Surface Mount 8-SO
IRL3716SPBF

IRL3716SPBF

MOSFET N-CH 20V 180A D2PAK

Infineon Technologies

5,142 -
RFQ
IRL3716SPBF

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 20 V 180A (Tc) 4.5V, 10V 4mOhm @ 90A, 10V 3V @ 250µA 79 nC @ 4.5 V ±20V 5090 pF @ 10 V - 210W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRLL024ZPBF

IRLL024ZPBF

MOSFET N-CH 55V 5A SOT223

Infineon Technologies

8,902 -
RFQ
IRLL024ZPBF

Datenblatt

HEXFET® TO-261-4, TO-261AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 5A (Tc) 4.5V, 10V 60mOhm @ 3A, 10V 3V @ 250µA 11 nC @ 5 V ±16V 380 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
IRF8721PBF

IRF8721PBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies

3,085 -
RFQ
IRF8721PBF

Datenblatt

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 8.5mOhm @ 14A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1040 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7240PBF

IRF7240PBF

MOSFET P-CH 40V 10.5A 8SO

Infineon Technologies

2,721 -
RFQ
IRF7240PBF

Datenblatt

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 40 V 10.5A (Ta) 4.5V, 10V 15mOhm @ 10.5A, 10V 3V @ 250µA 110 nC @ 10 V ±20V 9250 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRFR540ZPBF

IRFR540ZPBF

MOSFET N-CH 100V 35A DPAK

Infineon Technologies

2,351 -
RFQ
IRFR540ZPBF

Datenblatt

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 28.5mOhm @ 21A, 10V 4V @ 50µA 59 nC @ 10 V ±20V 1690 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRF2907ZSPBF

IRF2907ZSPBF

MOSFET N-CH 75V 160A D2PAK

Infineon Technologies

9,591 -
RFQ
IRF2907ZSPBF

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 75 V 160A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF7854PBF

IRF7854PBF

MOSFET N-CH 80V 10A 8SO

Infineon Technologies

6,903 -
RFQ
IRF7854PBF

Datenblatt

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 10A (Ta) 10V 13.4mOhm @ 10A, 10V 4.9V @ 100µA 41 nC @ 10 V ±20V 1620 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF8714PBF

IRF8714PBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies

3,741 -
RFQ
IRF8714PBF

Datenblatt

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 8.7mOhm @ 14A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1020 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
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