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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SI7485DP-T1-E3

    SI7485DP-T1-E3

    MOSFET P-CH 20V 12.5A PPAK SO-8

    Vishay Siliconix

    		 5,476 -
    RFQ

    -

    		 - PowerPAK® SO-8 Cut Tape (CT) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 12.5A (Ta) - 7.3mOhm @ 20A, 4.5V 900mV @ 1mA 150 nC @ 5 V - - - - - - - Surface Mount PowerPAK® SO-8
    SI7703EDN-T1-E3

    SI7703EDN-T1-E3

    MOSFET P-CH 20V 4.3A PPAK1212-8

    Vishay Siliconix

    		 6,506 -
    RFQ

    -

    		 TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 4.3A (Ta) 1.8V, 4.5V 48mOhm @ 6.3A, 4.5V 1V @ 800µA 18 nC @ 4.5 V ±12V - Schottky Diode (Isolated) 1.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
    SI7858ADP-T1-E3

    SI7858ADP-T1-E3

    MOSFET N-CH 12V 20A PPAK SO-8

    Vishay Siliconix

    		 6,100 -
    RFQ
    		SI7858ADP-T1-E3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12 V 20A (Ta) 2.5V, 4.5V 2.6mOhm @ 29A, 4.5V 1.5V @ 250µA 80 nC @ 4.5 V ±8V 5700 pF @ 6 V - 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    SI8402DB-T1-E1

    SI8402DB-T1-E1

    MOSFET N-CH 20V 5.3A 2X2 4-MFP

    Vishay Siliconix

    		 8,984 -
    RFQ

    -

    		 - 4-XFBGA, CSPBGA Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) - 37mOhm @ 1A, 4.5V 1V @ 250µA 26 nC @ 4.5 V - - - - - - - Surface Mount 4-Microfoot
    SUM110N04-03P-E3

    SUM110N04-03P-E3

    MOSFET N-CH 40V 110A TO263

    Vishay Siliconix

    		 8,621 -
    RFQ

    -

    		 TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 10V 3.1mOhm @ 30A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 6500 pF @ 25 V - 3.75W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    SUM110N04-04-E3

    SUM110N04-04-E3

    MOSFET N-CH 40V 110A TO263

    Vishay Siliconix

    		 6,153 -
    RFQ
    		SUM110N04-04-E3

    Datenblatt

         		TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 10V 3.5mOhm @ 30A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 6800 pF @ 25 V - 3.75W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    SUM110N04-2M3L-E3

    SUM110N04-2M3L-E3

    MOSFET N-CH 40V 110A TO263

    Vishay Siliconix

    		 2,902 -
    RFQ

    -

    		 TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 4.5V, 10V 2.3mOhm @ 30A, 10V 3V @ 250µA 360 nC @ 10 V ±20V 13600 pF @ 25 V - 3.75W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    SUM52N20-39P-E3

    SUM52N20-39P-E3

    MOSFET N-CH 200V 52A TO263

    Vishay Siliconix

    		 2,053 -
    RFQ

    -

    		 TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 52A (Tc) 10V, 15V 38mOhm @ 20A, 15V 4.5V @ 250µA 185 nC @ 15 V ±25V 4220 pF @ 25 V - 3.12W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    2SK2719(F)

    2SK2719(F)

    MOSFET N-CH 900V 3A TO3P

    Toshiba Semiconductor and Storage

    		 7,557 -
    RFQ
    		2SK2719(F)

    Datenblatt

         		- TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 3A (Ta) 10V 4.3Ohm @ 1.5A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 750 pF @ 25 V - 125W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
    2SK2847(F)

    2SK2847(F)

    MOSFET N-CH 900V 8A TO3PIS

    Toshiba Semiconductor and Storage

    		 5,627 -
    RFQ
    		2SK2847(F)

    Datenblatt

         		- TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 8A (Ta) 10V 1.4Ohm @ 4A, 10V 4V @ 1mA 58 nC @ 10 V ±30V 2040 pF @ 25 V - 85W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)IS
    2SK2917(F)

    2SK2917(F)

    MOSFET N-CH 500V 18A TO3PIS

    Toshiba Semiconductor and Storage

    		 3,466 -
    RFQ
    		2SK2917(F)

    Datenblatt

         		- TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 18A (Ta) 10V 270mOhm @ 10A, 10V 4V @ 1mA 80 nC @ 10 V ±30V 3720 pF @ 10 V - 90W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)IS
    2SK2967(F)

    2SK2967(F)

    MOSFET N-CH 250V 30A TO3P

    Toshiba Semiconductor and Storage

    		 6,449 -
    RFQ
    		2SK2967(F)

    Datenblatt

         		- TO-3P-3, SC-65-3 Tray Obsolete N-Channel MOSFET (Metal Oxide) 250 V 30A (Ta) 10V 68mOhm @ 15A, 10V 3.5V @ 1mA 132 nC @ 10 V ±20V 5400 pF @ 10 V - 150W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
    2SK2993(TE24L,Q)

    2SK2993(TE24L,Q)

    MOSFET N-CH 250V 20A TO220SM

    Toshiba Semiconductor and Storage

    		 3,849 -
    RFQ
    		2SK2993(TE24L,Q)

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 250 V 20A (Ta) 10V 105mOhm @ 10A, 10V 3.5V @ 1mA 100 nC @ 10 V ±20V 4000 pF @ 10 V - 100W (Tc) 150°C (TJ) - - Surface Mount TO-220SM
    2SK2995(F)

    2SK2995(F)

    MOSFET N-CH 250V 30A TO3PIS

    Toshiba Semiconductor and Storage

    		 5,899 -
    RFQ
    		2SK2995(F)

    Datenblatt

         		- TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 30A (Ta) 10V 68mOhm @ 15A, 10V 3.5V @ 1mA 132 nC @ 10 V ±20V 5400 pF @ 10 V - 90W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)IS
    2SK3068(TE24L,Q)

    2SK3068(TE24L,Q)

    MOSFET N-CH 500V 12A TO220SM

    Toshiba Semiconductor and Storage

    		 7,947 -
    RFQ
    		2SK3068(TE24L,Q)

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Ta) 10V 520mOhm @ 6A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2040 pF @ 10 V - 100W (Tc) 150°C (TJ) - - Surface Mount TO-220SM
    2SK3127(TE24L,Q)

    2SK3127(TE24L,Q)

    MOSFET N-CH 30V 45A TO220SM

    Toshiba Semiconductor and Storage

    		 4,038 -
    RFQ
    		2SK3127(TE24L,Q)

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 45A (Ta) 10V 12mOhm @ 25A, 10V 3V @ 1mA 66 nC @ 10 V ±20V 2300 pF @ 10 V - 65W (Tc) 150°C (TJ) - - Surface Mount TO-220SM
    2SK3132(Q)

    2SK3132(Q)

    MOSFET N-CH 500V 50A TO3P

    Toshiba Semiconductor and Storage

    		 2,348 -
    RFQ
    		2SK3132(Q)

    Datenblatt

         		- TO-3PL Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 50A (Tc) 10V 95mOhm @ 25A, 10V 3.4V @ 1mA 280 nC @ 10 V ±30V 11000 pF @ 10 V - 250W (Tc) 150°C (TJ) - - Through Hole TO-3P(L)
    STW80NF55-08

    STW80NF55-08

    MOSFET N-CH 55V 80A TO247-3

    STMicroelectronics

    		 5,630 -
    RFQ
    		STW80NF55-08

    Datenblatt

         		STripFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 40A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 3850 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
    FDD6N50FTF

    FDD6N50FTF

    MOSFET N-CH 500V 5.5A DPAK

    onsemi

    		 3,105 -
    RFQ

    -

    		 UniFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5.5A (Tc) 10V 1.15Ohm @ 2.75A, 10V 5V @ 250µA 19.8 nC @ 10 V ±30V 960 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    2SK3565(Q,M)

    2SK3565(Q,M)

    MOSFET N-CH 900V 5A TO220SIS

    Toshiba Semiconductor and Storage

    		 4,634 -
    RFQ
    		2SK3565(Q,M)

    Datenblatt

         		π-MOSIV TO-220-3 Full Pack Bulk Last Time Buy N-Channel MOSFET (Metal Oxide) 900 V 5A (Ta) 10V 2.5Ohm @ 3A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 1150 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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