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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NTLJF3118NTAG

    NTLJF3118NTAG

    MOSFET N-CH 20V 2.6A 6WDFN

    onsemi

    		 9,551 -
    RFQ
    		NTLJF3118NTAG

    Datenblatt

         		- 6-WDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2.6A (Ta) 1.8V, 4.5V 65mOhm @ 3.8A, 4.5V 1V @ 250µA 3.7 nC @ 4.5 V ±12V 271 pF @ 10 V Schottky Diode (Isolated) 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-WDFN (2x2)
    NTMFS4833NT3G

    NTMFS4833NT3G

    MOSFET N-CH 30V 16A/156A 5DFN

    onsemi

    		 4,994 -
    RFQ
    		NTMFS4833NT3G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 156A (Tc) 4.5V, 10V 2mOhm @ 30A, 10V 2.5V @ 250µA 88 nC @ 11.5 V ±20V 5600 pF @ 12 V - 910mW (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    NTMFS4834NT3G

    NTMFS4834NT3G

    MOSFET N-CH 30V 13A/130A 5DFN

    onsemi

    		 2,319 -
    RFQ
    		NTMFS4834NT3G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 130A (Tc) 4.5V, 11.5V 3mOhm @ 30A, 10V 2.5V @ 250µA 48 nC @ 4.5 V ±20V 4500 pF @ 12 V - 900mW (Ta), 86.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    NTMFS4837NHT3G

    NTMFS4837NHT3G

    MOSFET N-CH 30V 10.2A/75A 5DFN

    onsemi

    		 2,612 -
    RFQ
    		NTMFS4837NHT3G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10.2A (Ta), 75A (Tc) 4.5V, 11.5V 5mOhm @ 30A, 10V 2.5V @ 250µA 23.8 nC @ 4.5 V ±20V 3016 pF @ 12 V - 880mW (Ta), 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    NTMFS4841NHT1G

    NTMFS4841NHT1G

    MOSFET N-CH 30V 8.6A/59A 5DFN

    onsemi

    		 4,106 -
    RFQ
    		NTMFS4841NHT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.6A (Ta), 59A (Tc) 4.5V, 10V 7mOhm @ 30A, 10V 2.5V @ 250µA 33 nC @ 11.5 V ±20V 2113 pF @ 12 V - 870mW (Ta), 41.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    NTMFS4841NHT3G

    NTMFS4841NHT3G

    MOSFET N-CH 30V 8.6A/59A 5DFN

    onsemi

    		 2,693 -
    RFQ
    		NTMFS4841NHT3G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.6A (Ta), 59A (Tc) 4.5V, 10V 7mOhm @ 30A, 10V 2.5V @ 250µA 33 nC @ 11.5 V ±20V 2113 pF @ 12 V - 870mW (Ta), 41.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    NTMFS4841NT3G

    NTMFS4841NT3G

    MOSFET N-CH 30V 8.3A/57A 5DFN

    onsemi

    		 7,146 -
    RFQ
    		NTMFS4841NT3G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta), 57A (Tc) 4.5V, 10V 7mOhm @ 30A, 10V 2.5V @ 250µA 17 nC @ 4.5 V ±20V 1436 pF @ 12 V - 870mW (Ta), 41.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    R5013ANXFU6

    R5013ANXFU6

    MOSFET N-CH 500V 13A TO220FM

    Rohm Semiconductor

    		 9,653 -
    RFQ

    -

    		 - TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 13A (Ta) 10V 380mOhm @ 6.5A, 10V 4.5V @ 1mA 35 nC @ 10 V ±30V 1300 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    RDX050N50FU6

    RDX050N50FU6

    MOSFET N-CH 500V 5A TO220FM

    Rohm Semiconductor

    		 8,829 -
    RFQ
    		RDX050N50FU6

    Datenblatt

         		- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Ta) 10V 1.5Ohm @ 2.5A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 500 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    RDX060N60FU6

    RDX060N60FU6

    MOSFET N-CH 600V 6A TO220FM

    Rohm Semiconductor

    		 5,186 -
    RFQ
    		RDX060N60FU6

    Datenblatt

         		- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6A (Ta) 10V 1.2Ohm @ 3A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 950 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    RDX080N50FU6

    RDX080N50FU6

    MOSFET N-CH 500V 8A TO220FM

    Rohm Semiconductor

    		 5,441 -
    RFQ
    		RDX080N50FU6

    Datenblatt

         		- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Ta) 10V 850mOhm @ 4A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 920 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    RDX100N60FU6

    RDX100N60FU6

    MOSFET N-CH 600V 10A TO220FM

    Rohm Semiconductor

    		 9,651 -
    RFQ
    		RDX100N60FU6

    Datenblatt

         		- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Ta) 10V 650mOhm @ 5A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 1600 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    RDX120N50FU6

    RDX120N50FU6

    MOSFET N-CH 500V 12A TO220FM

    Rohm Semiconductor

    		 5,930 -
    RFQ
    		RDX120N50FU6

    Datenblatt

         		- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Ta) 10V 500mOhm @ 6A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 1600 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    RSS065N06FU6TB

    RSS065N06FU6TB

    MOSFET N-CH 60V 6.5A 8SOP

    Rohm Semiconductor

    		 6,698 -
    RFQ
    		RSS065N06FU6TB

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 6.5A (Ta) 4V, 10V 37mOhm @ 6.5A, 10V 2.5V @ 1mA 16 nC @ 5 V 20V 900 pF @ 10 V - 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    FDP24N40

    FDP24N40

    MOSFET N-CH 400V 24A TO220-3

    onsemi

    		 5,699 -
    RFQ
    		FDP24N40

    Datenblatt

         		UniFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 400 V 24A (Tc) 10V 175mOhm @ 12A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 3020 pF @ 25 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    ZXMN2F34MATA

    ZXMN2F34MATA

    MOSFET N-CH 20V 4A DFN322

    Diodes Incorporated

    		 6,401 -
    RFQ
    		ZXMN2F34MATA

    Datenblatt

         		- 3-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 2.5V, 4.5V 60mOhm @ 2.5A, 4.5V 1.5V @ 250µA 2.8 nC @ 4.5 V ±12V 277 pF @ 10 V - 1.35W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount DFN322
    IRFR3706CPBF

    IRFR3706CPBF

    MOSFET N-CH 20V 75A DPAK

    Infineon Technologies

    		 4,911 -
    RFQ
    		IRFR3706CPBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 2.8V, 10V 9mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    IRF8707PBF

    IRF8707PBF

    MOSFET N-CH 30V 11A 8SO

    Infineon Technologies

    		 3,351 -
    RFQ
    		IRF8707PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 11.9mOhm @ 11A, 10V 2.35V @ 25µA 9.3 nC @ 4.5 V ±20V 760 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7459PBF

    IRF7459PBF

    MOSFET N-CH 20V 12A 8SO

    Infineon Technologies

    		 8,024 -
    RFQ
    		IRF7459PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 20 V 12A (Ta) 2.8V, 10V 9mOhm @ 12A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2480 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRL3713SPBF

    IRL3713SPBF

    MOSFET N-CH 30V 260A D2PAK

    Infineon Technologies

    		 4,068 -
    RFQ
    		IRL3713SPBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 260A (Tc) 4.5V, 10V 3mOhm @ 38A, 10V 2.5V @ 250µA 110 nC @ 4.5 V ±20V 5890 pF @ 15 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
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