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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IRF7855PBF

    IRF7855PBF

    MOSFET N-CH 60V 12A 8SO

    Infineon Technologies

    		 3,997 -
    RFQ
    		IRF7855PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 12A (Ta) 10V 9.4mOhm @ 12A, 10V 4.9V @ 100µA 39 nC @ 10 V ±20V 1560 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRLR8721PBF

    IRLR8721PBF

    MOSFET N-CH 30V 65A DPAK

    Infineon Technologies

    		 6,765 -
    RFQ
    		IRLR8721PBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 65A (Tc) 4.5V, 10V 8.4mOhm @ 25A, 10V 2.35V @ 25µA 13 nC @ 4.5 V ±20V 1030 pF @ 15 V - 65W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    IRLR8743PBF

    IRLR8743PBF

    MOSFET N-CH 30V 160A DPAK

    Infineon Technologies

    		 3,832 -
    RFQ
    		IRLR8743PBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 4.5V, 10V 3.1mOhm @ 25A, 10V 2.35V @ 100µA 59 nC @ 4.5 V ±20V 4880 pF @ 15 V - 135W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    IRL3803VSPBF

    IRL3803VSPBF

    MOSFET N-CH 30V 140A D2PAK

    Infineon Technologies

    		 4,867 -
    RFQ
    		IRL3803VSPBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 5.5mOhm @ 71A, 10V 1V @ 250µA 76 nC @ 4.5 V ±16V 3720 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRF9Z24NSPBF

    IRF9Z24NSPBF

    MOSFET P-CH 55V 12A D2PAK

    Infineon Technologies

    		 2,837 -
    RFQ
    		IRF9Z24NSPBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 55 V 12A (Tc) 10V 175mOhm @ 7.2A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRF9520NSPBF

    IRF9520NSPBF

    MOSFET P-CH 100V 6.8A D2PAK

    Infineon Technologies

    		 5,587 -
    RFQ
    		IRF9520NSPBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 480mOhm @ 4A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRF7853PBF

    IRF7853PBF

    MOSFET N-CH 100V 8.3A 8SO

    Infineon Technologies

    		 9,423 -
    RFQ
    		IRF7853PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100 V 8.3A (Ta) 10V 18mOhm @ 8.3A, 10V 4.9V @ 100µA 39 nC @ 10 V ±20V 1640 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF3805SPBF

    IRF3805SPBF

    MOSFET N-CH 55V 75A D2PAK

    Infineon Technologies

    		 4,354 -
    RFQ
    		IRF3805SPBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V 7960 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRF2804SPBF

    IRF2804SPBF

    MOSFET N-CH 40V 75A D2PAK

    Infineon Technologies

    		 7,502 -
    RFQ
    		IRF2804SPBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 2mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRF1405ZSPBF

    IRF1405ZSPBF

    MOSFET N-CH 55V 75A D2PAK

    Infineon Technologies

    		 6,447 -
    RFQ
    		IRF1405ZSPBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRF7601PBF

    IRF7601PBF

    MOSFET N-CH 20V 5.7A MICRO8

    Infineon Technologies

    		 7,730 -
    RFQ
    		IRF7601PBF

    Datenblatt

         		HEXFET® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 20 V 5.7A (Ta) 2.7V, 4.5V 35mOhm @ 3.8A, 4.5V 700mV @ 250µA (Min) 22 nC @ 4.5 V ±12V 650 pF @ 15 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount Micro8™
    IRFS4227PBF

    IRFS4227PBF

    MOSFET N-CH 200V 62A D2PAK

    Infineon Technologies

    		 9,310 -
    RFQ
    		IRFS4227PBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 200 V 62A (Tc) 10V 26mOhm @ 46A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 4600 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRF2903ZSPBF

    IRF2903ZSPBF

    MOSFET N-CH 30V 75A D2PAK

    Infineon Technologies

    		 5,359 -
    RFQ
    		IRF2903ZSPBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 150µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRF9540NSPBF

    IRF9540NSPBF

    MOSFET P-CH 100V 23A D2PAK

    Infineon Technologies

    		 4,865 -
    RFQ
    		IRF9540NSPBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 117mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1450 pF @ 25 V - 3.1W (Ta), 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    IRF5210SPBF

    IRF5210SPBF

    MOSFET P-CH 100V 38A D2PAK

    Infineon Technologies

    		 6,248 -
    RFQ
    		IRF5210SPBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 10V 60mOhm @ 38A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 2780 pF @ 25 V - 3.1W (Ta), 170W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    IRF6216PBF

    IRF6216PBF

    MOSFET P-CH 150V 2.2A 8SO

    Infineon Technologies

    		 6,645 -
    RFQ
    		IRF6216PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 150 V 2.2A (Ta) 10V 240mOhm @ 1.3A, 10V 5V @ 250µA 49 nC @ 10 V ±20V 1280 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRFS4310PBF

    IRFS4310PBF

    MOSFET N-CH 100V 130A D2PAK

    Infineon Technologies

    		 4,482 -
    RFQ
    		IRFS4310PBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRFR3418PBF

    IRFR3418PBF

    MOSFET N-CH 80V 70A DPAK

    Infineon Technologies

    		 8,474 -
    RFQ
    		IRFR3418PBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 10V 14mOhm @ 18A, 10V 5.5V @ 250µA 94 nC @ 10 V ±20V 3510 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    IRF7425PBF

    IRF7425PBF

    MOSFET P-CH 20V 15A 8SO

    Infineon Technologies

    		 2,927 -
    RFQ
    		IRF7425PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 20 V 15A (Ta) 2.5V, 4.5V 8.2mOhm @ 15A, 4.5V 1.2V @ 250µA 130 nC @ 4.5 V ±12V 7980 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRLR3110ZPBF

    IRLR3110ZPBF

    MOSFET N-CH 100V 42A DPAK

    Infineon Technologies

    		 3,211 -
    RFQ
    		IRLR3110ZPBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 14mOhm @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V 3980 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
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