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Einzelne Dioden
TomatoElec liefert einzelne Dioden für Industrie, Automotive, Kommunikation, Stromversorgung und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst häufig verwendete einzelne Diodenprodukte für Gleichrichtungs-, Schalt-, Signalsteuerungs- und Schutzschaltungen.
Wir unterstützen flexible RFQ-Services für die Beschaffung einzelner Dioden und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.
Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung einzelner Dioden, schnelle Angebotsabgabe und weltweite Lieferung bieten.
| Foto | Hersteller-Teilenr. | Verfügbarkeit | Preis | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Kapazität @ Vr, F | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket | Betriebstemperatur - Sperrschicht |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
C4D10120EDIODE SIL CARB 1.2KV 33A TO252-2 |
5,722 | - |
|
Datenblatt |
Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 33A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 1200 V | 754pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
IDH20G65C6XKSA1DIODE SIL CARB 650V 41A TO220-2 |
1,342 | - |
|
Datenblatt |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 41A | 1.35 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 67 µA @ 420 V | 970pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
|
C4D08120ADIODE SIL CARB 1.2KV 24.5A TO220 |
711 | - |
|
Datenblatt |
Z-Rec® | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 24.5A | 1.8 V @ 7.5 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 1200 V | 560pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
DH40-18ADIODE GEN PURP 1.8KV 40A TO247AD |
406 | - |
|
Datenblatt |
SONIC-FRD™ | TO-247-2 | Tube | Active | Standard | 1800 V | 40A | 2.7 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 100 µA @ 1800 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
JAN1N5819UR-1DIODE SCHOTTKY 45V 1A DO213AB |
175 | - |
|
Datenblatt |
- | DO-213AB, MELF (Glass) | Bulk | Active | Schottky | 45 V | 1A | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | Military | MIL-PRF-19500/586 | Surface Mount | DO-213AB (MELF, LL41) | -65°C ~ 125°C |
|
1N5809USDIODE GEN PURP 100V 3A B SQ-MELF |
629 | - |
|
Datenblatt |
- | SQ-MELF, B | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
IDH20G65C5XKSA2DIODE SIL CARB 650V 20A TO220-1 |
864 | - |
|
Datenblatt |
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 210 µA @ 650 V | 590pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
JANTX1N5811USDIODE GEN PURP 150V 3A B SQ-MELF |
116 | - |
|
Datenblatt |
- | SQ-MELF, B | Bulk | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
GD10MPS17HDIODE SIL CARB 1.7KV 26A TO247-2 |
780 | - |
|
Datenblatt |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 26A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 721pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
1N5819UR-1DIODE SCHOTTKY 45V 1A DO213AB |
376 | - |
|
Datenblatt |
- | DO-213AB, MELF (Glass) | Bulk | Active | Schottky | 45 V | 1A | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | - | - | Surface Mount | DO-213AB (MELF, LL41) | -65°C ~ 150°C |
|
IDW20G65C5XKSA1DIODE SIL CARB 650V 20A TO247-3 |
270 | - |
|
Datenblatt |
CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 210 µA @ 650 V | 590pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3-41 | -55°C ~ 175°C |
|
|
1N5554DIODE GEN PURP 1KV 3A AXIAL |
218 | - |
|
Datenblatt |
- | B, Axial | Bulk | Active | Standard | 1000 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 1000 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
C4D10120ADIODE SIL CARB 1.2KV 33A TO220-2 |
469 | - |
|
Datenblatt |
Z-Rec® | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 33A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 1200 V | 754pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
IDH20G120C5XKSA1DIODE SIL CARB 1.2KV 56A TO220-1 |
974 | - |
|
Datenblatt |
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 56A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 123 µA @ 1200 V | 1050pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
IDK20G120C5XTMA1DIODE SIL CARB 1.2KV 56A TO263-1 |
1,079 | - |
|
Datenblatt |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 56A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | - | 123 µA @ 1200 V | 1050pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2-1 | -55°C ~ 175°C |
|
STPSC20H12G-TRDIODE SIL CARB 1.2KV 20A D2PAK |
4,630 | - |
|
Datenblatt |
ECOPACK®2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 1200 V | 1650pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK | -40°C ~ 175°C |
|
1N5711UR-1DIODE SCHOTTKY 50V 33MA DO213AA |
223 | - |
|
Datenblatt |
- | DO-213AA | Bulk | Active | Schottky | 50 V | 33mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 150°C |
|
GD60MPS06HDIODE SIL CARB 650V 82A TO247-2 |
849 | - |
|
Datenblatt |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 82A | 1.8 V @ 60 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | 1463pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
STPSC20H12GY-TRDIODE SIL CARB 1.2KV 20A D2PAK |
1,492 | - |
|
Datenblatt |
ECOPACK®2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 1200 V | 1650pF @ 0V, 1MHz | Automotive | AEC-Q101 | Surface Mount | D2PAK | -40°C ~ 175°C |
|
GAP3SLT33-214DIODE SIC 3.3KV 300MA DO214AA |
6,598 | - |
|
Datenblatt |
SiC Schottky MPS™ | DO-214AA, SMB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 3300 V | 300mA | 2.2 V @ 300 mA | - | 0 ns | 10 µA @ 3300 V | 42pF @ 1V, 1MHz | - | - | Surface Mount | DO-214AA | -55°C ~ 175°C |
