Verfügbar 24/7 unter
0755-82798135Einzeldioden
Einzelne Dioden
TomatoElec liefert einzelne Dioden für Industrie, Automotive, Kommunikation, Stromversorgung und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst häufig verwendete einzelne Diodenprodukte für Gleichrichtungs-, Schalt-, Signalsteuerungs- und Schutzschaltungen.
Wir unterstützen flexible RFQ-Services für die Beschaffung einzelner Dioden und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.
Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung einzelner Dioden, schnelle Angebotsabgabe und weltweite Lieferung bieten.
| Foto | Hersteller-Teilenr. | Verfügbarkeit | Preis | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Kapazität @ Vr, F | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket | Betriebstemperatur - Sperrschicht |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5615DIODE GEN PURP 200V 1A AXIAL |
270 | - |
|
Datenblatt |
- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 200 V | 45pF @ 12V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
STPSC10H065B-TRDIODE SIL CARBIDE 650V 10A DPAK |
12,231 | - |
|
Datenblatt |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 480pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -40°C ~ 175°C |
|
1N5417DIODE GEN PURP 200V 3A B AXIAL |
1,183 | - |
|
Datenblatt |
- | Axial | Bulk | Active | Standard | 200 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
DSEI20-12ADIODE GEN PURP 1.2KV 17A TO220AC |
846 | - |
|
Datenblatt |
- | TO-220-2 | Tube | Active | Standard | 1200 V | 17A | 2.15 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 750 µA @ 1200 V | - | - | - | Through Hole | TO-220AC | -40°C ~ 150°C |
|
IDH10G65C6XKSA1DIODE SIL CARB 650V 24A TO220-2 |
869 | - |
|
Datenblatt |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 24A | 1.35 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 33 µA @ 420 V | 495pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
|
|
IDW75D65D1XKSA1DIODE GEN PURP 650V 150A TO247-3 |
2,129 | - |
|
Datenblatt |
- | TO-247-3 | Tube | Active | Standard | 650 V | 150A | 1.7 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 108 ns | 40 µA @ 650 V | - | - | - | Through Hole | PG-TO247-3 | -40°C ~ 175°C |
|
|
JANTX1N5615DIODE GEN PURP 200V 1A A-PAK |
2,371 | - |
|
Datenblatt |
- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 200 V | 45pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
|
C3D10060ADIODE SIL CARB 600V 30A TO220-2 |
1,991 | - |
|
Datenblatt |
Z-Rec® | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 30A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 480pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
C3D10060GDIODE SIL CARB 600V 29A TO263-2 |
1,068 | - |
|
Datenblatt |
Z-Rec® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 29A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 480pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
IDM10G120C5XTMA1DIODE SIL CARB 1.2KV 38A TO252-2 |
4,234 | - |
|
Datenblatt |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 38A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 62 µA @ 12 V | 29pF @ 800V, 1MHz | - | - | Surface Mount | PG-TO252-2 | -55°C ~ 150°C |
|
GD05MPS17J-TR1700V 5A TO-247-2 SIC SCHOTTKY M |
1,286 | - |
|
Datenblatt |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1700 V | 15A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 361pF @ 1V, 1MHz | - | - | Surface Mount | TO-263-7 | -55°C ~ 175°C |
|
GD05MPS17HDIODE SIL CARB 1.7KV 15A TO247-2 |
993 | - |
|
Datenblatt |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 15A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 361pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
VS-90EPS12L-M3DIODE GEN PURP 1.2KV 90A TO247AD |
862 | - |
|
Datenblatt |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 90A | 1.2 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
|
RURG5060-F085DIODE GEN PURP 600V 50A TO247-2 |
387 | - |
|
Datenblatt |
- | TO-247-2 | Tube | Active | Avalanche | 600 V | 50A | 1.6 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 250 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
1N5552DIODE GEN PURP 600V 3A AXIAL |
911 | - |
|
Datenblatt |
- | B, Axial | Bulk | Active | Standard | 600 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
C4D05120EDIODE SIL CARB 1.2KV 19A TO252-2 |
3,241 | - |
|
Datenblatt |
Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 19A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 1200 V | 390pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
C4D05120ADIODE SIL CARB 1.2KV 19A TO220-2 |
587 | - |
|
Datenblatt |
Z-Rec® | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 19A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 1200 V | 390pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
APT100S20BGDIODE SCHOTTKY 200V 120A TO247 |
3,777 | - |
|
Datenblatt |
- | TO-247-2 | Tube | Active | Schottky | 200 V | 120A | 950 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 70 ns | 2 mA @ 200 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 150°C |
|
DSEP30-12ADIODE GEN PURP 1.2KV 30A TO247AD |
5,978 | - |
|
Datenblatt |
HiPerFRED™ | TO-247-2 | Tube | Active | Standard | 1200 V | 30A | 2.74 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
VS-90EPS16L-M3DIODE GEN PURP 1.6KV 90A TO247AD |
435 | - |
|
Datenblatt |
- | TO-247-2 | Tube | Active | Standard | 1600 V | 90A | 1.21 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1600 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
