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Einzelne Dioden
TomatoElec liefert einzelne Dioden für Industrie, Automotive, Kommunikation, Stromversorgung und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst häufig verwendete einzelne Diodenprodukte für Gleichrichtungs-, Schalt-, Signalsteuerungs- und Schutzschaltungen.
Wir unterstützen flexible RFQ-Services für die Beschaffung einzelner Dioden und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.
Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung einzelner Dioden, schnelle Angebotsabgabe und weltweite Lieferung bieten.
| Foto | Hersteller-Teilenr. | Verfügbarkeit | Preis | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Kapazität @ Vr, F | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket | Betriebstemperatur - Sperrschicht |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDH10G120C5XKSA1DIODE SIL CARB 1.2KV 10A TO220-1 |
1,175 | - |
|
Datenblatt |
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 62 µA @ 1200 V | 525pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
1N5806USDIODE GEN PURP 150V 1A D-5A |
72,209 | - |
|
Datenblatt |
- | SQ-MELF, A | Bulk | Active | Standard | 150 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
|
VS-30EPH03-N3DIODE GP 300V 30A TO247AC |
973 | - |
|
Datenblatt |
FRED Pt® | TO-247-2 | Tube | Active | Standard | 300 V | 30A | 1.25 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 38 ns | 60 µA @ 300 V | - | - | - | Through Hole | TO-247AC Modified | -65°C ~ 175°C |
|
GP3D005A170BDIODE SIL CARB 1.7KV 21A TO247-2 |
1,517 | - |
|
Datenblatt |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 21A | 1.65 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 347pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
RHRG5060-F085DIODE GEN PURP 600V 50A TO247-2 |
294 | - |
|
Datenblatt |
- | TO-247-2 | Tube | Active | Avalanche | 600 V | 50A | 2.1 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 250 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
VS-65EPS16LHM3DIODE GEN PURP 1.6KV 65A TO247AD |
350 | - |
|
Datenblatt |
- | TO-247-2 | Tube | Active | Standard | 1600 V | 65A | 1.17 V @ 65 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -40°C ~ 150°C |
|
STPSC20065GY-TRDIODE SIL CARBIDE 650V 20A D2PAK |
1,785 | - |
|
Datenblatt |
ECOPACK®2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.45 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 600 V | 1250pF @ 0V, 1MHz | Automotive | AEC-Q101 | Surface Mount | D2PAK | -40°C ~ 175°C |
|
1N6642USDIODE GEN PURP 75V 300MA D-5D |
1,066 | - |
|
Datenblatt |
- | SQ-MELF, D | Bulk | Active | Standard | 75 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | - | - | Surface Mount | D-5D | -65°C ~ 175°C |
|
1N6642UDIODE GEN PURP 75V 300MA D-5D |
445 | - |
|
Datenblatt |
- | SQ-MELF, D | Bulk | Active | Standard | 75 V | 300mA | 800 mV @ 10 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 µA @ 75 V | - | - | - | Surface Mount | D-5D | -65°C ~ 175°C |
|
CDLL5819/TRDIODE SCHOTTKY 45V 1A DO213AA |
256 | - |
|
Datenblatt |
- | DO-213AA | Tape & Reel (TR) | Active | Schottky | 45 V | 1A | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 125°C |
|
IDDD16G65C6XTMA1DIODE SIL CARB 650V 43A HDSOP-10 |
4,841 | - |
|
Datenblatt |
CoolSiC™+ | 10-PowerSOP Module | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 43A | - | No Recovery Time > 500mA (Io) | 0 ns | 53 µA @ 420 V | 783pF @ 1V, 1MHz | - | - | Surface Mount | PG-HDSOP-10-1 | -55°C ~ 175°C |
|
IDH16G65C6XKSA1DIODE SIL CARB 650V 34A TO220-2 |
3,011 | - |
|
Datenblatt |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 34A | 1.35 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 53 µA @ 420 V | 783pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
|
1N5418DIODE GEN PURP 400V 3A B SQ-MELF |
384 | - |
|
Datenblatt |
- | B, Axial | Bulk | Active | Standard | 400 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 400 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5809DIODE GEN PURP 100V 3A AXIAL |
210 | - |
|
Datenblatt |
- | B, Axial | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JANTX1N5711-1DIODE SCHOTTKY 70V 33MA DO35 |
132 | - |
|
Datenblatt |
- | DO-204AH, DO-35, Axial | Bulk | Active | Schottky | 70 V | 33mA | 410 mV @ 1 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | Military | MIL-PRF-19500/444 | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
VS-60EPS16-M3DIODE GP 1.6KV 60A TO247AC |
668 | - |
|
Datenblatt |
- | TO-247-2 | Tube | Active | Standard | 1600 V | 60A | 1.15 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1600 V | - | - | - | Through Hole | TO-247AC Modified | -40°C ~ 150°C |
|
1N5811USDIODE GEN PURP 150V 3A B SQ-MELF |
815 | - |
|
Datenblatt |
- | SQ-MELF, B | Bulk | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
DSEI60-02ADIODE GEN PURP 200V 69A TO247AD |
137 | - |
|
Datenblatt |
- | TO-247-2 | Tube | Active | Standard | 200 V | 69A | 1.08 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 50 µA @ 200 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
1N6638USDIODE GEN PURP 125V 300MA D-5D |
541 | - |
|
Datenblatt |
- | SQ-MELF, D | Bulk | Active | Standard | 125 V | 300mA | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5 ns | 500 nA @ 125 V | 2.5pF @ 0V, 1MHz | - | - | Surface Mount | D-5D | -65°C ~ 175°C |
|
C4D10120EDIODE SIL CARB 1.2KV 33A TO252-2 |
5,722 | - |
|
Datenblatt |
Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 33A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 1200 V | 754pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
