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0755-82798135Einzeldioden
Einzelne Dioden
TomatoElec liefert einzelne Dioden für Industrie, Automotive, Kommunikation, Stromversorgung und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst häufig verwendete einzelne Diodenprodukte für Gleichrichtungs-, Schalt-, Signalsteuerungs- und Schutzschaltungen.
Wir unterstützen flexible RFQ-Services für die Beschaffung einzelner Dioden und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.
Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung einzelner Dioden, schnelle Angebotsabgabe und weltweite Lieferung bieten.
| Foto | Hersteller-Teilenr. | Verfügbarkeit | Preis | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Kapazität @ Vr, F | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket | Betriebstemperatur - Sperrschicht |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDW30G65C5XKSA1DIODE SIL CARB 650V 30A TO247-3 |
931 | - |
|
Datenblatt |
CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 220 µA @ 650 V | 860pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
|
STPSC20H12G2Y-TRDIODE SIL CARB 1.2KV 20A D2PAK |
2,769 | - |
|
Datenblatt |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | - | 120 µA @ 1200 V | 1650pF @ 0V, 1MHz | Automotive | AEC-Q101 | Surface Mount | D2PAK HV | -40°C ~ 175°C |
|
JANTXV1N5809USDIODE GEN PURP 100V 3A B SQ-MELF |
166 | - |
|
Datenblatt |
- | SQ-MELF, B | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JANTXV1N5811USDIODE GEN PURP 150V 3A B SQ-MELF |
148 | - |
|
Datenblatt |
- | SQ-MELF, B | Bulk | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
DSDI60-16ADIODE GEN PURP 1.6KV 63A TO247AD |
328 | - |
|
Datenblatt |
- | TO-247-2 | Tube | Active | Standard | 1600 V | 63A | 4.1 V @ 70 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 2 mA @ 1600 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
UJ3D06560KSDDIODE SIL CARB 650V 30A TO247-3 |
6,369 | - |
|
Datenblatt |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 740 µA @ 650 V | 1980pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
VS-70HFL100S05DIODE GEN PURP 1KV 70A DO203AB |
244 | - |
|
Datenblatt |
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 1000 V | 70A | 1.85 V @ 219.8 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 100 µA @ 1000 V | - | - | - | Chassis, Stud Mount | DO-203AB (DO-5) | -40°C ~ 125°C |
|
VS-85HFR60DIODE GEN PURP 600V 85A DO203AB |
120 | - |
|
Datenblatt |
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard, Reverse Polarity | 600 V | 85A | 1.2 V @ 267 A | Standard Recovery >500ns, > 200mA (Io) | - | 9 mA @ 600 V | - | - | - | Chassis, Stud Mount | DO-203AB (DO-5) | -65°C ~ 180°C |
|
|
JANS1N6642DIODE GEN PURP 75V 300MA DO204AH |
434 | - |
|
Datenblatt |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 75 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | Military | MIL-PRF-19500/578 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
E4D10120ADIODE SIL CARB 1.2KV 33A TO220-2 |
386 | - |
|
Datenblatt |
E-Series | TO-220-2 | Tube | Last Time Buy | SiC (Silicon Carbide) Schottky | 1200 V | 33A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | - | 200 µA @ 1200 V | 777pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GD50MPS12HDIODE SIL CARB 1.2KV 92A TO247-2 |
124 | - |
|
Datenblatt |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 92A | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 1200 V | 1835pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
C4D20120HDIODE SIL CARB 1.2KV 54A TO247-2 |
410 | - |
|
Datenblatt |
Z-Rec® | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 54A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1500pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
E4D20120GDIODE SIL CARB 1.2KV 56A TO263-2 |
2,376 | - |
|
Datenblatt |
E-Series | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Last Time Buy | SiC (Silicon Carbide) Schottky | 1200 V | 56A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1474pF @ 0V, 1MHz | Automotive | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
C4D30120HDIODE SIL CARB 1.2KV 94A TO247-2 |
780 | - |
|
Datenblatt |
- | TO-247-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 1200 V | 94A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | - | 250 µA @ 1200 V | 2177pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
C6D50065HSIC, SCHOTTKY DIODE, 136A, 650V, |
1,383 | - |
|
Datenblatt |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 136A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | - | 100 µA @ 650 V | 2819pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
C4D20120ADIODE SIL CARB 1.2KV 54.5A TO220 |
5,493 | - |
|
Datenblatt |
Z-Rec® | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 54.5A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1500pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
LSIC2SD120D20ASIC SCHOTTKY DIODE 1200V 20A TO2 |
750 | - |
|
Datenblatt |
Gen2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 55A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 1310pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263-2L | -55°C ~ 175°C |
|
UJ3D1250KDIODE SIL CARB 1.2KV 50A TO247-3 |
6,427 | - |
|
Datenblatt |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 50A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | 2340pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
VS-T40HF60DIODE GEN PURP 600V 40A D-55 |
124 | - |
|
Datenblatt |
- | D-55 T-Module | Bulk | Active | Standard | 600 V | 40A | - | Standard Recovery >500ns, > 200mA (Io) | - | 15 mA @ 600 V | - | - | - | Chassis Mount | D-55 | - |
|
|
VS-HFA135NH40PBFDIODE GEN PURP 400V 275A D-67 |
136 | - |
|
Datenblatt |
HEXFRED® | D-67 HALF-PAK | Bulk | Active | Standard | 400 V | 275A | 2 V @ 270 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 3 mA @ 400 V | - | - | - | Chassis Mount | D-67 HALF-PAK | - |
