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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    FQB19N20TM

    FQB19N20TM

    MOSFET N-CH 200V 19.4A D2PAK

    onsemi

    		 2,224 -
    RFQ
    		FQB19N20TM

    Datenblatt

         		QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 19.4A (Tc) 10V 150mOhm @ 9.7A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1600 pF @ 25 V - 3.13W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    AOT410L

    AOT410L

    MOSFET N-CH 100V 12A/150A TO220

    Alpha & Omega Semiconductor Inc.

    		 988 -
    RFQ
    		AOT410L

    Datenblatt

         		SDMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 12A (Ta), 150A (Tc) 7V, 10V 6.5mOhm @ 20A, 10V 4V @ 250µA 129 nC @ 10 V ±25V 7950 pF @ 50 V - 1.9W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    RSH070P05GZETB

    RSH070P05GZETB

    MOSFET P-CH 45V 7A 8SOP

    Rohm Semiconductor

    		 6,100 -
    RFQ
    		RSH070P05GZETB

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 45 V 7A (Ta) 4V, 10V 27mOhm @ 7A, 10V 2.5V @ 1mA 47.6 nC @ 5 V ±20V 4100 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    SI7110DN-T1-GE3

    SI7110DN-T1-GE3

    MOSFET N-CH 20V 13.5A PPAK1212-8

    Vishay Siliconix

    		 5,255 -
    RFQ
    		SI7110DN-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 13.5A (Ta) 4.5V, 10V 5.3mOhm @ 21.1A, 10V 2.5V @ 250µA 21 nC @ 4.5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
    R6006KND3TL1

    R6006KND3TL1

    MOSFET N-CH 600V 6A TO252

    Rohm Semiconductor

    		 2,633 -
    RFQ
    		R6006KND3TL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 830mOhm @ 3A, 10V 5.5V @ 1mA 12 nC @ 10 V ±20V 350 pF @ 25 V - 70W (Tc) 150°C (TJ) - - Surface Mount TO-252
    IRFI9Z14GPBF

    IRFI9Z14GPBF

    MOSFET P-CH 60V 5.3A TO220-3

    Vishay Siliconix

    		 1,760 -
    RFQ

    -

    		 - TO-220-3 Full Pack, Isolated Tab Tube Active P-Channel MOSFET (Metal Oxide) 60 V 5.3A (Tc) 10V 500mOhm @ 3.2A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 27W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    IRFI510GPBF

    IRFI510GPBF

    MOSFET N-CH 100V 4.5A TO220-3

    Vishay Siliconix

    		 919 -
    RFQ

    -

    		 - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 100 V 4.5A (Tc) 10V 540mOhm @ 2.7A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 27W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    STD7NM60N

    STD7NM60N

    MOSFET N-CH 600V 5A DPAK

    STMicroelectronics

    		 11,162 -
    RFQ
    		STD7NM60N

    Datenblatt

         		MDmesh™ II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Tc) 10V 900mOhm @ 2.5A, 10V 4V @ 250µA 14 nC @ 10 V ±25V 363 pF @ 50 V - 45W (Tc) 150°C (TJ) - - Surface Mount DPAK
    TSM7ND60CI

    TSM7ND60CI

    MOSFET N-CH 600V 7A ITO220

    Taiwan Semiconductor Corporation

    		 3,945 -
    RFQ
    		TSM7ND60CI

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 1.2Ohm @ 2A, 10V 3.8V @ 250µA 25 nC @ 10 V ±30V 1108 pF @ 50 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
    SUD35N10-26P-GE3

    SUD35N10-26P-GE3

    MOSFET N-CH 100V 35A TO252

    Vishay Siliconix

    		 1,914 -
    RFQ
    		SUD35N10-26P-GE3

    Datenblatt

         		TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 7V, 10V 26mOhm @ 12A, 10V 4.4V @ 250µA 47 nC @ 10 V ±20V 2000 pF @ 12 V - 8.3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
    R6015KNX

    R6015KNX

    MOSFET N-CH 600V 15A TO220FM

    Rohm Semiconductor

    		 454 -
    RFQ
    		R6015KNX

    Datenblatt

         		- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 290mOhm @ 6.5A, 10V 5V @ 1mA 27.5 nC @ 10 V ±20V 1050 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FM
    CSD18512Q5BT

    CSD18512Q5BT

    MOSFET N-CH 40V 211A 8VSON

    Texas Instruments

    		 350 -
    RFQ
    		CSD18512Q5BT

    Datenblatt

         		NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 211A (Tc) 4.5V, 10V 1.6mOhm @ 30A, 10V 2.2V @ 250µA 98 nC @ 10 V ±20V 7120 pF @ 20 V - 139W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSON-CLIP (5x6)
    IXTP60N10T

    IXTP60N10T

    MOSFET N-CH 100V 60A TO220AB

    Littelfuse Inc.

    		 255 -
    RFQ
    		IXTP60N10T

    Datenblatt

         		Trench TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 18mOhm @ 25A, 10V 4.5V @ 50µA 49 nC @ 10 V ±30V 2650 pF @ 25 V - 176W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    NP75N04YLG-E1-AY

    NP75N04YLG-E1-AY

    ABU / MOSFET

    Renesas Electronics Corporation

    		 2,929 -
    RFQ
    		NP75N04YLG-E1-AY

    Datenblatt

         		- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Ta) 4.5V, 10V 4.8mOhm @ 38A, 10V 2.5V @ 250µA 116 nC @ 10 V ±20V 6450 pF @ 25 V - 138W (Ta) 175°C - - Surface Mount 8-HSON (5x5.4)
    SIHB11N80AE-GE3

    SIHB11N80AE-GE3

    MOSFET N-CH 800V 8A D2PAK

    Vishay Siliconix

    		 972 -
    RFQ
    		SIHB11N80AE-GE3

    Datenblatt

         		E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 450mOhm @ 5.5A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 804 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    R6520KNX3C16

    R6520KNX3C16

    650V 20A, TO-220AB, HIGH-SPEED S

    Rohm Semiconductor

    		 865 -
    RFQ
    		R6520KNX3C16

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 205mOhm @9.5A, 10V 5V @ 630µA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 220W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    CSD18511KTTT

    CSD18511KTTT

    MOSFET N-CH 40V 110A/194A DDPAK

    Texas Instruments

    		 554 -
    RFQ
    		CSD18511KTTT

    Datenblatt

         		NexFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Ta), 194A (Tc) 4.5V, 10V 2.6mOhm @ 100A, 10V 2.4V @ 250µA 64 nC @ 10 V ±20V 5940 pF @ 20 V - 188W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (DDPAK-3)
    STD6N80K5

    STD6N80K5

    MOSFET N-CH 800V 4.5A DPAK

    STMicroelectronics

    		 10,455 -
    RFQ
    		STD6N80K5

    Datenblatt

         		SuperMESH5™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 1.6Ohm @ 2A, 10V 5V @ 100µA 7.5 nC @ 10 V 30V 255 pF @ 100 V - 85W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    IAUA180N04S5N012AUMA1

    IAUA180N04S5N012AUMA1

    MOSFET N-CH 40V 180A HSOF-5-1

    Infineon Technologies

    		 3,375 -
    RFQ
    		IAUA180N04S5N012AUMA1

    Datenblatt

         		OptiMOS™ 5 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 7V, 10V 1.2mOhm @ 90A, 10V 3.4V @ 70µA 100 nC @ 10 V ±20V 6158 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-5-2
    SI4490DY-T1-E3

    SI4490DY-T1-E3

    MOSFET N-CH 200V 2.85A 8SO

    Vishay Siliconix

    		 2,029 -
    RFQ
    		SI4490DY-T1-E3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 2.85A (Ta) 6V, 10V 80mOhm @ 4A, 10V 2V @ 250µA (Min) 42 nC @ 10 V ±20V - - 1.56W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
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