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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    STP5NK52ZD

    STP5NK52ZD

    MOSFET N-CH 520V 4.4A TO220AB

    STMicroelectronics

    		 1,321 -
    RFQ
    		STP5NK52ZD

    Datenblatt

         		SuperMESH™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 520 V 4.4A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4.5V @ 50µA 16.9 nC @ 10 V ±30V 529 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    IQE006NE2LM5CGATMA1

    IQE006NE2LM5CGATMA1

    MOSFET N-CH 25V 41A/298A PQFN

    Infineon Technologies

    		 9,485 -
    RFQ
    		IQE006NE2LM5CGATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 41A (Ta), 298A (Tc) - 0.65mOhm @ 20A, 10V 2V @ 250µA 82.1 nC @ 10 V ±16V 5453 pF @ 12 V - 2.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TTFN-9-1
    SI4488DY-T1-E3

    SI4488DY-T1-E3

    MOSFET N-CH 150V 3.5A 8SO

    Vishay Siliconix

    		 4,291 -
    RFQ
    		SI4488DY-T1-E3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 3.5A (Ta) 10V 50mOhm @ 5A, 10V 2V @ 250µA (Min) 36 nC @ 10 V ±20V - - 1.56W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    STD8NM50N

    STD8NM50N

    MOSFET N-CH 500V 5A DPAK

    STMicroelectronics

    		 3,272 -
    RFQ
    		STD8NM50N

    Datenblatt

         		MDmesh™ II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 790mOhm @ 2.5A, 10V 4V @ 250µA 14 nC @ 10 V ±25V 364 pF @ 50 V - 45W (Tc) 150°C (TJ) - - Surface Mount DPAK
    NP36P06KDG-E1-AY

    NP36P06KDG-E1-AY

    MOSFET P-CH 60V 36A TO263

    Renesas Electronics Corporation

    		 2,712 -
    RFQ
    		NP36P06KDG-E1-AY

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 36A (Tc) 4.5V, 10V 29.5mOhm @ 18A, 10V 2.5V @ 1mA 54 nC @ 10 V ±20V 3100 pF @ 10 V - 1.8W (Ta), 56W (Tc) 175°C (TJ) - - Surface Mount TO-263
    IPA60R180P7XKSA1

    IPA60R180P7XKSA1

    MOSFET N-CHANNEL 650V 18A TO220

    Infineon Technologies

    		 696 -
    RFQ
    		IPA60R180P7XKSA1

    Datenblatt

         		CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 26W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220 Full Pack
    RCX220N25

    RCX220N25

    MOSFET N-CH 250V 22A TO220FM

    Rohm Semiconductor

    		 500 -
    RFQ
    		RCX220N25

    Datenblatt

         		- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 250 V 22A (Tc) 10V 140mOhm @ 11A, 10V 5V @ 1mA 60 nC @ 10 V ±30V 3200 pF @ 25 V - 2.23W (Ta), 40W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    RCX100N25

    RCX100N25

    MOSFET N-CH 250V 10A TO220FM

    Rohm Semiconductor

    		 387 -
    RFQ
    		RCX100N25

    Datenblatt

         		- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 250 V 10A (Ta) 10V - - - ±30V - - 40W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    FDMC8321LDC

    FDMC8321LDC

    MOSFET N-CH 40V 27A DLCOOL33

    onsemi

    		 6,231 -
    RFQ
    		FDMC8321LDC

    Datenblatt

         		PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 27A (Ta), 108A (Tc) 4.5V, 10V 2.5mOhm @ 27A, 10V 3V @ 250µA 60 nC @ 10 V ±20V 3965 pF @ 20 V - 2.9W (Ta), 56W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount Dual Cool ™ 33
    SIR846ADP-T1-GE3

    SIR846ADP-T1-GE3

    MOSFET N-CH 100V 60A PPAK SO-8

    Vishay Siliconix

    		 5,900 -
    RFQ
    		SIR846ADP-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 6V, 10V 7.8mOhm @ 20A, 10V 3V @ 250µA 66 nC @ 10 V ±20V 2350 pF @ 50 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    SIR870ADP-T1-RE3

    SIR870ADP-T1-RE3

    MOSFET N-CH 100V 60A PPAK SO-8

    Vishay Siliconix

    		 2,583 -
    RFQ
    		SIR870ADP-T1-RE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 4.5V, 10V 6.6mOhm @ 20A, 10V 3V @ 250µA 80 nC @ 10 V ±20V 2866 pF @ 50 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    STB13N60M2

    STB13N60M2

    MOSFET N-CH 600V 11A D2PAK

    STMicroelectronics

    		 7,590 -
    RFQ
    		STB13N60M2

    Datenblatt

         		MDmesh™ II Plus TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 580 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    STP6NK60Z

    STP6NK60Z

    MOSFET N-CH 600V 6A TO220AB

    STMicroelectronics

    		 1,841 -
    RFQ
    		STP6NK60Z

    Datenblatt

         		SuperMESH™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 1.2Ohm @ 3A, 10V 4.5V @ 100µA 46 nC @ 10 V ±30V 905 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    IPP040N08NF2SAKMA1

    IPP040N08NF2SAKMA1

    TRENCH 40<-<100V

    Infineon Technologies

    		 729 -
    RFQ
    		IPP040N08NF2SAKMA1

    Datenblatt

         		StrongIRFET™ 2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 22A (Ta), 115A (Tc) 6V, 10V 4mOhm @ 80A, 10V 3.8V @ 85µA 81 nC @ 10 V ±20V 3800 pF @ 40 V - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
    PJMP210N65EC_T0_00601

    PJMP210N65EC_T0_00601

    650V/ 390MOHM / 10A/ EASY TO DRI

    Panjit International Inc.

    		 700 -
    RFQ
    		PJMP210N65EC_T0_00601

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 700 V 19A (Tc) 10V 210mOhm @ 9.5A, 10V 4V @ 250µA 34 nC @ 10 V ±30V 1412 pF @ 400 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB-L
    FDP3651U

    FDP3651U

    MOSFET N-CH 100V 80A TO220-3

    onsemi

    		 662 -
    RFQ
    		FDP3651U

    Datenblatt

         		PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 18mOhm @ 80A, 10V 5.5V @ 250µA 69 nC @ 10 V ±20V 5522 pF @ 25 V - 255W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    STU16N65M2

    STU16N65M2

    MOSFET N-CH 650V 11A IPAK

    STMicroelectronics

    		 10,477 -
    RFQ
    		STU16N65M2

    Datenblatt

         		MDmesh™ M2 TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 19.5 nC @ 10 V ±25V 718 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
    IRFI9634GPBF

    IRFI9634GPBF

    MOSFET P-CH 250V 4.1A TO220-3

    Vishay Siliconix

    		 2,848 -
    RFQ

    -

    		 - TO-220-3 Full Pack, Isolated Tab Tube Active P-Channel MOSFET (Metal Oxide) 250 V 4.1A (Tc) 10V 1Ohm @ 2.5A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 680 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    BUK966R5-60E,118

    BUK966R5-60E,118

    MOSFET N-CH 60V 75A D2PAK

    Nexperia USA Inc.

    		 4,765 -
    RFQ
    		BUK966R5-60E,118

    Datenblatt

         		TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 5V 5.9mOhm @ 25A, 10V 2.1V @ 1mA 48 nC @ 5 V ±10V 6900 pF @ 25 V - 182W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
    IRF730ASPBF

    IRF730ASPBF

    MOSFET N-CH 400V 5.5A D2PAK

    Vishay Siliconix

    		 1,497 -
    RFQ
    		IRF730ASPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4.5V @ 250µA 22 nC @ 10 V ±30V 600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
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