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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    G26P04D5

    G26P04D5

    MOSFET P-CH 40V 26A DFN5*6-8L

    Goford Semiconductor

    		 10,000 -
    RFQ
    		G26P04D5

    Datenblatt

         		TrenchFET® 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) - 26A (Tc) 4.5V, 10V 18mOhm @ 12A, 10V 2.5V @ 250µA - ±20V - - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
    NTD70N03RG

    NTD70N03RG

    MOSFET N-CH 25V 10A/32A DPAK

    onsemi

    		 2,566 -
    RFQ
    		NTD70N03RG

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 10A (Ta), 32A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2V @ 250µA 13.2 nC @ 5 V ±20V 1333 pF @ 20 V - 1.36W (Ta), 62.5W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
    NTD4959NHT4G

    NTD4959NHT4G

    MOSFET N-CH 30V 9A/58A DPAK

    onsemi

    		 2,494 -
    RFQ
    		NTD4959NHT4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 44 nC @ 11.5 V ±20V 2155 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
    2SK669

    2SK669

    N-CHANNEL MOSFET

    Sanyo

    		 6,660 -
    RFQ
    		2SK669

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    IPS105N03LG

    IPS105N03LG

    N-CHANNEL POWER MOSFET

    Infineon Technologies

    		 6,615 -
    RFQ
    		IPS105N03LG

    Datenblatt

         		CoolMOS™ TO-251-3 Stub Leads, IPAK Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 10.5mOhm @ 30A, 10V 2.2V @ 250µA 14 nC @ 10 V ±20V 1500 pF @ 15 V - 38W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO251-3-11
    NTD4813N-35G

    NTD4813N-35G

    MOSFET N-CH 30V 7.6A/40A IPAK

    onsemi

    		 6,150 -
    RFQ
    		NTD4813N-35G

    Datenblatt

         		- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.6A (Ta), 40A (Tc) 4.5V, 11.5V 13mOhm @ 30A, 10V 2.5V @ 250µA 7.9 nC @ 4.5 V ±20V 860 pF @ 12 V - 1.27W (Ta), 35.3W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    NTD4858NA-1G

    NTD4858NA-1G

    MOSFET N-CH 25V 11.2A/73A IPAK

    onsemi

    		 2,773 -
    RFQ
    		NTD4858NA-1G

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 11.2A (Ta), 73A (Tc) - 6.2mOhm @ 30A, 10V 2.5V @ 250µA 19.2 nC @ 4.5 V - 1563 pF @ 12 V - 1.3W (Ta), 54.5W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    IRFS820B

    IRFS820B

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 4,853 -
    RFQ
    		IRFS820B

    Datenblatt

         		- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tj) 10V 2.6Ohm @ 1.25A, 10V 4V @ 250µA 18 nC @ 10 V ±30V 610 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    NTD30N02G

    NTD30N02G

    MOSFET N-CH 24V 30A DPAK

    onsemi

    		 4,385 -
    RFQ
    		NTD30N02G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 24 V 30A (Ta) 4.5V, 10V 14.5mOhm @ 30A, 10V 3V @ 250µA 20 nC @ 4.5 V ±20V 1000 pF @ 20 V - 75W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    NTD4809NH-1G

    NTD4809NH-1G

    MOSFET N-CH 30V 9.6A/58A IPAK

    onsemi

    		 3,603 -
    RFQ
    		NTD4809NH-1G

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 15 nC @ 4.5 V ±20V 2155 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    SSS2N60B

    SSS2N60B

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 3,094 -
    RFQ
    		SSS2N60B

    Datenblatt

         		- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tj) 10V 5Ohm @ 1A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 490 pF @ 25 V - 23W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
    NTLJS4159NT1G

    NTLJS4159NT1G

    MOSFET N-CH 30V 3.6A 6WDFN

    onsemi

    		 2,863 -
    RFQ
    		NTLJS4159NT1G

    Datenblatt

         		- 6-WDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 1.8V, 4.5V 35mOhm @ 2A, 4.5V 1V @ 250µA 13 nC @ 4.5 V ±8V 1045 pF @ 15 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-WDFN (2x2)
    MCH6336-P-TL-E

    MCH6336-P-TL-E

    MOSFET P-CH 12V 5A MCPH6

    onsemi

    		 3,000 -
    RFQ

    -

    		 - 6-SMD, Flat Leads Bulk Obsolete - - - 5A (Tj) - - - - - - - - - - - Surface Mount 6-MCPH
    MTP20N06V

    MTP20N06V

    N-CHANNEL POWER MOSFET

    onsemi

    		 2,410 -
    RFQ
    		MTP20N06V

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    SSR1N60BTM-WS

    SSR1N60BTM-WS

    MOSFET N-CH 600V 900MA DPAK

    Fairchild Semiconductor

    		 2,350 -
    RFQ
    		SSR1N60BTM-WS

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 900mA (Tc) 10V 12Ohm @ 450mA, 10V 4V @ 250µA 7.7 nC @ 10 V ±30V 215 pF @ 25 V - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    HUFA76609D3ST_NL

    HUFA76609D3ST_NL

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 2,281 -
    RFQ
    		HUFA76609D3ST_NL

    Datenblatt

         		UltraFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4.5V, 10V 160mOhm @ 10A, 10V 3V @ 250µA 16 nC @ 10 V ±16V 425 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    NTD4804NA-35G

    NTD4804NA-35G

    MOSFET N-CH 30V 14.5A/124A IPAK

    onsemi

    		 9,507 -
    RFQ
    		NTD4804NA-35G

    Datenblatt

         		- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14.5A (Ta), 124A (Tc) 4.5V, 11.5V 4mOhm @ 30A, 10V 2.5V @ 250µA 40 nC @ 4.5 V ±20V 4490 pF @ 12 V - 1.43W (Ta), 93.75W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    RFD3055

    RFD3055

    MOSFET N-CH 60V 12A IPAK

    Fairchild Semiconductor

    		 2,230 -
    RFQ
    		RFD3055

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 10V 150mOhm @ 12A, 10V 4V @ 250µA 23 nC @ 20 V ±20V 300 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    NTD24N06-1G

    NTD24N06-1G

    MOSFET N-CH 60V 24A IPAK

    onsemi

    		 4,946 -
    RFQ
    		NTD24N06-1G

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 24A (Ta) 10V 42mOhm @ 10A, 10V 4V @ 250µA 48 nC @ 10 V ±20V 1200 pF @ 25 V - 1.36W (Ta), 62.5W (Tj) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    SFI9Z24TU

    SFI9Z24TU

    P-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 2,000 -
    RFQ
    		SFI9Z24TU

    Datenblatt

         		- TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active P-Channel MOSFET (Metal Oxide) 60 V 9.7A (Tc) 10V 280mOhm @ 4.9A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 600 pF @ 25 V - 3.8W (Ta), 49W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262 (I2PAK)
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