FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IRFHM9391TRPBF

IRFHM9391TRPBF

MOSFET P-CH 30V 11A 8PQFN

Infineon Technologies

5,704 -
RFQ
IRFHM9391TRPBF

Datenblatt

HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 14.6mOhm @ 11A, 10V 2.4V @ 25µA 16 nC @ 10 V ±25V 1543 pF @ 25 V - 2.6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (3.3x3.3), Power33
IRL6283MTRPBF

IRL6283MTRPBF

MOSFET N-CH 20V 38A DIRECTFET

Infineon Technologies

3,209 -
RFQ
IRL6283MTRPBF

Datenblatt

HEXFET®, StrongIRFET™ DirectFET™ Isometric MD Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 38A (Ta), 211A (Tc) 2.5V, 4.5V 0.75mOhm @ 50A, 10V 1.1V @ 100µA 158 nC @ 4.5 V ±12V 8292 pF @ 10 V - 2.1W (Ta), 63W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MD
EKI04036

EKI04036

MOSFET N-CH 40V 80A TO220-3

Sanken Electric USA Inc.

4,935 -
RFQ
EKI04036

Datenblatt

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 3.8mOhm @ 58.5A, 10V 2.5V @ 1mA 63.2 nC @ 10 V ±20V 3910 pF @ 25 V - 116W (Tc) 150°C (TJ) - - Through Hole TO-220-3
EKI06108

EKI06108

MOSFET N-CH 60V 57A TO220-3

Sanken Electric USA Inc.

5,049 -
RFQ
EKI06108

Datenblatt

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 4.5V, 10V 9.2mOhm @ 28.5A, 10V 2.5V @ 650µA 38.6 nC @ 10 V ±20V 2520 pF @ 25 V - 90W (Tc) 150°C (TJ) - - Through Hole TO-220-3
FKI06269

FKI06269

MOSFET N-CH 60V 24A TO220F

Sanken Electric USA Inc.

8,442 -
RFQ
FKI06269

Datenblatt

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 24A (Tc) 4.5V, 10V 21.8mOhm @ 15.8A, 10V 2.5V @ 250µA 16 nC @ 10 V ±20V 1050 pF @ 25 V - 29W (Tc) 150°C (TJ) - - Through Hole TO-220F
IRFHM8228TRPBF

IRFHM8228TRPBF

MOSFET N-CH 25V 19A 8PQFN

Infineon Technologies

9,060 -
RFQ
IRFHM8228TRPBF

Datenblatt

HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 19A (Ta) 4.5V, 10V 5.2mOhm @ 20A, 10V 2.35V @ 25µA 18 nC @ 10 V ±20V 1667 pF @ 10 V - 2.8W (Ta), 34W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (3.3x3.3), Power33
IPP50R399CPXKSA1

IPP50R399CPXKSA1

MOSFET N-CH 500V 9A TO220-3

Infineon Technologies

9,975 -
RFQ
IPP50R399CPXKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Ta) 10V 399mOhm @ 4.9A, 10V 3.5V @ 330µA 4 nC @ 10 V ±20V 890 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
FDMC612PZ

FDMC612PZ

MOSFET P-CH 20V 14A 8MLP

onsemi

4,698 -
RFQ
FDMC612PZ

Datenblatt

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 14A (Ta) 2.5V, 4.5V 8.4mOhm @ 14A, 4.5V 1.5V @ 250µA 74 nC @ 4.5 V ±12V 7995 pF @ 10 V - 2.3W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (3.3x3.3)
FDB035AN06A0-F085

FDB035AN06A0-F085

MOSFET N-CH 60V 22A D2PAK

onsemi

7,562 -
RFQ
FDB035AN06A0-F085

Datenblatt

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 22A (Ta) 10V 3.5mOhm @ 80A, 10V 4V @ 250µA 124 nC @ 10 V ±20V 6400 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
FDB3632-F085

FDB3632-F085

MOSFET N-CH 100V 12A TO263AB

onsemi

5,718 -
RFQ
FDB3632-F085

Datenblatt

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 12A (Ta) 10V 9mOhm @ 80A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 6000 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
FDD10AN06A0-F085

FDD10AN06A0-F085

MOSFET N-CH 60V 11A TO252AA

onsemi

3,906 -
RFQ
FDD10AN06A0-F085

Datenblatt

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 11A (Ta) 10V 10.5mOhm @ 50A, 10V 4V @ 250µA 37 nC @ 10 V ±20V 1840 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
FDD8870-F085

FDD8870-F085

MOSFET N-CH 30V 21A TO252AA

onsemi

8,374 -
RFQ
FDD8870-F085

Datenblatt

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta) 4.5V, 10V 3.9mOhm @ 35A, 10V 2.5V @ 250µA 118 nC @ 10 V ±20V 5160 pF @ 15 V - 160W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
TK14C65W,S1Q

TK14C65W,S1Q

MOSFET N-CH 650V 13.7A I2PAK

Toshiba Semiconductor and Storage

4,153 -
RFQ

-

DTMOSIV TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 250mOhm @ 6.9A, 10V 3.5V @ 690µA 35 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) - - Through Hole I2PAK
TK14C65W5,S1Q

TK14C65W5,S1Q

MOSFET N-CH 650V 13.7A I2PAK

Toshiba Semiconductor and Storage

9,642 -
RFQ

-

DTMOSIV TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 300mOhm @ 6.9A, 10V 4.5V @ 690µA 40 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) - - Through Hole I2PAK
SUP50N10-21P-GE3

SUP50N10-21P-GE3

MOSFET N-CH 100V 50A TO220AB

Vishay Siliconix

9,752 -
RFQ
SUP50N10-21P-GE3

Datenblatt

TrenchFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 6V, 10V 21mOhm @ 10A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 2055 pF @ 50 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
FDP2710-F085

FDP2710-F085

MOSFET N-CH 250V 4A TO220-3

onsemi

9,835 -
RFQ
FDP2710-F085

Datenblatt

PowerTrench® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 4A (Ta) 10V 47mOhm @ 50A, 10V 5V @ 250µA 101 nC @ 10 V ±30V 5690 pF @ 25 V - 403W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-220-3
FQP2N40-F080

FQP2N40-F080

MOSFET N-CH 400V 1.8A TO220-3

onsemi

9,918 -
RFQ
FQP2N40-F080

Datenblatt

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 400 V 1.8A (Tc) 10V 5.8Ohm @ 900mA, 10V 5V @ 250µA 5.5 nC @ 10 V ±30V 150 pF @ 25 V - 40W (Ta) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
HUFA75852G3-F085

HUFA75852G3-F085

MOSFET N-CH 150V 75A TO247-3

onsemi

2,087 -
RFQ

-

UltraFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 75A (Tc) 10V 16mOhm @ 75A, 10V 4V @ 250µA 480 nC @ 20 V ±20V 7690 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
FDB8832-F085

FDB8832-F085

MOSFET N-CH 30V 34A TO263AB

onsemi

2,680 -
RFQ
FDB8832-F085

Datenblatt

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 34A (Ta) 4.5V, 10V 1.9mOhm @ 80A, 10V 3V @ 250µA 265 nC @ 10 V ±20V 11400 pF @ 15 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
FDB8896-F085

FDB8896-F085

MOSFET N-CH 30V 19A/93A TO263AB

onsemi

5,140 -
RFQ
FDB8896-F085

Datenblatt

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 93A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 67 nC @ 10 V ±20V 2525 pF @ 15 V - 80W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
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