TomatoElecBestellverfolgung TomatoElecMein Konto
    Beliebte Suche AP2210K-ADJTRG1 DFLU1200-7 AP3012KTR-E1 DDZ7V5CS-7 RS1MWF-7 BAS116-7-F AP7345D-1833RH4-7 FCX493TA SDM02U30CSP-7 LM5164DDAR
    TomatoElec

    Verfügbar 24/7 unter

    0755-82798135
    TomatoElec TomatoElec
    Alle Kategorien
    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

    Alles zurücksetzen
    Alle anwenden
    Ergebnis

    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPU60R950C6BKMA1

    IPU60R950C6BKMA1

    MOSFET N-CH 600V 4.4A TO251-3

    Infineon Technologies

    		 9,376 -
    RFQ
    		IPU60R950C6BKMA1

    Datenblatt

         		CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 600 V 4.4A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 130µA 1.5 nC @ 10 V ±20V 280 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    FDM15-06KC5

    FDM15-06KC5

    MOSFET N-CH 600V 15A I4PAC

    IXYS

    		 3,188 -
    RFQ
    		FDM15-06KC5

    Datenblatt

         		CoolMOS™ ISOPLUSi5-PAK™ Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 165mOhm @ 12A, 10V 3.5V @ 790µA 52 nC @ 10 V ±20V 2000 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS i4-PAC™
    FDM47-06KC5

    FDM47-06KC5

    MOSFET N-CH 600V 47A I4PAC

    IXYS

    		 9,813 -
    RFQ
    		FDM47-06KC5

    Datenblatt

         		CoolMOS™, HiPerDyn™ ISOPLUSi5-PAK™ Tube Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 45mOhm @ 44A, 10V 3.5V @ 3mA 190 nC @ 10 V ±20V 6800 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS i4-PAC™
    TK20C60W,S1VQ

    TK20C60W,S1VQ

    MOSFET N-CH 600V 20A I2PAK

    Toshiba Semiconductor and Storage

    		 5,501 -
    RFQ

    -

    		 DTMOSIV TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 165W (Tc) 150°C (TJ) - - Through Hole I2PAK
    FM6K62010L

    FM6K62010L

    MOSFET N-CH 20V 2A WSMINI6

    Panasonic Electronic Components

    		 4,068 -
    RFQ
    		FM6K62010L

    Datenblatt

         		- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 2.5V, 4V 105mOhm @ 1A, 4V 1.3V @ 1mA - ±10V 280 pF @ 10 V Schottky Diode (Isolated) 700mW (Ta) 125°C (TJ) - - Surface Mount WSMini6-F1-B
    FM6L52020L

    FM6L52020L

    MOSFET N-CH 20V 2.2A WSSMINI6-F1

    Panasonic Electronic Components

    		 9,837 -
    RFQ
    		FM6L52020L

    Datenblatt

         		- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 2.5V, 4V 105mOhm @ 1A, 4V 1.3V @ 1mA - ±10V 280 pF @ 10 V - 540mW (Ta) 125°C (TJ) - - Surface Mount WSSMini6-F1
    MTM131270BBF

    MTM131270BBF

    MOSFET P-CH 20V 2A MINI3-G3-B

    Panasonic Electronic Components

    		 2,981 -
    RFQ

    -

    		 - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.8 V, 4V 130mOhm @ 1A, 4V 1.1V @ 1mA - ±10V 300 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount MINI3-G3-B
    STULED656

    STULED656

    MOSFET N-CH 650V 6A IPAK

    STMicroelectronics

    		 7,394 -
    RFQ
    		STULED656

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 1.3Ohm @ 2.7A, 10V 4.5V @ 50µA 34 nC @ 10 V ±30V 895 pF @ 100 V - 70W (Tc) 150°C (TJ) - - Through Hole TO-251 (IPAK)
    2N6764T1

    2N6764T1

    MOSFET N-CH 100V 38A TO3

    Microsemi Corporation

    		 2,026 -
    RFQ
    		2N6764T1

    Datenblatt

         		- TO-204AE Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 10V 65mOhm @ 38A, 10V 4V @ 250µA 125 nC @ 10 V ±20V - - 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3
    2N6768T1

    2N6768T1

    MOSFET N-CH 400V 14A TO254AA

    Microsemi Corporation

    		 9,950 -
    RFQ
    		2N6768T1

    Datenblatt

         		- TO-254-3, TO-254AA (Straight Leads) Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 14A (Tc) 10V 400mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V - - 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-254AA
    2N6770T1

    2N6770T1

    MOSFET N-CH 500V 12A TO254AA

    Microsemi Corporation

    		 9,671 -
    RFQ
    		2N6770T1

    Datenblatt

         		- TO-254-3, TO-254AA (Straight Leads) Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 500mOhm @ 12A, 10V 4V @ 250µA 120 nC @ 10 V ±20V - - 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-254AA
    APT100MC120JCU2

    APT100MC120JCU2

    SICFET N-CH 1200V 143A SOT227

    Microchip Technology

    		 8,508 -
    RFQ
    		APT100MC120JCU2

    Datenblatt

         		- SOT-227-4, miniBLOC Bulk Last Time Buy N-Channel SiCFET (Silicon Carbide) 1200 V 143A (Tc) 20V 17mOhm @ 100A, 20V 2.3V @ 2mA 360 nC @ 20 V +25V, -10V 5960 pF @ 1000 V - 600W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SOT-227
    IRFP460BPBF

    IRFP460BPBF

    MOSFET N-CH 500V 20A TO247AC

    Vishay Siliconix

    		 3,528 -
    RFQ
    		IRFP460BPBF

    Datenblatt

         		- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 250mOhm @ 10A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 3094 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    SIB410DK-T1-GE3

    SIB410DK-T1-GE3

    MOSFET N-CH 30V 9A PPAK SC75-6

    Vishay Siliconix

    		 6,115 -
    RFQ
    		SIB410DK-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SC-75-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Tc) 1.8V, 4.5V 42mOhm @ 3.8A, 4.5V 1V @ 250µA 15 nC @ 8 V ±8V 560 pF @ 15 V - 2.5W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-75-6
    IPB65R045C7ATMA1

    IPB65R045C7ATMA1

    MOSFET N-CH 650V 46A D2PAK

    Infineon Technologies

    		 9,993 -
    RFQ
    		IPB65R045C7ATMA1

    Datenblatt

         		CoolMOS™ C7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 45mOhm @ 24.9A, 10V 4V @ 1.25mA 93 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
    IPB65R225C7ATMA1

    IPB65R225C7ATMA1

    MOSFET N-CH 650V 11A D2PAK

    Infineon Technologies

    		 5,619 -
    RFQ
    		IPB65R225C7ATMA1

    Datenblatt

         		CoolMOS™ C7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 225mOhm @ 4.8A, 10V 4V @ 240µA 20 nC @ 10 V ±20V 996 pF @ 400 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
    IRFS7434-7PPBF

    IRFS7434-7PPBF

    MOSFET N-CH 40V 240A D2PAK

    Infineon Technologies

    		 4,115 -
    RFQ
    		IRFS7434-7PPBF

    Datenblatt

         		HEXFET®, StrongIRFET™ TO-263-7, D2PAK (6 Leads + Tab) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 6V, 10V 1mOhm @ 100A, 10V 3.9V @ 250µA 315 nC @ 10 V ±20V 10250 pF @ 25 V - 245W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK (7-Lead)
    IRFR7446PBF

    IRFR7446PBF

    MOSFET N-CH 40V 56A TO252

    Infineon Technologies

    		 9,720 -
    RFQ
    		IRFR7446PBF

    Datenblatt

         		HEXFET®, StrongIRFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 56A (Tc) 6V, 10V 3.9mOhm @ 56A, 10V 3.9V @ 100µA 130 nC @ 10 V ±20V 3150 pF @ 25 V - 98W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    PSMN3R9-60XSQ

    PSMN3R9-60XSQ

    MOSFET N-CH 60V 75A TO220F

    NXP USA Inc.

    		 2,255 -
    RFQ
    		PSMN3R9-60XSQ

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 4mOhm @ 25A, 10V 4V @ 1mA 103 nC @ 10 V ±20V 5494 pF @ 25 V - 55W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F
    UPA2600T1R-E2-AX

    UPA2600T1R-E2-AX

    MOSFET N-CH 20V 7A 6HUSON

    Renesas Electronics Corporation

    		 4,118 -
    RFQ
    		UPA2600T1R-E2-AX

    Datenblatt

         		- 6-WFDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 7A (Ta) 2.5V, 4.5V 19.1mOhm @ 3.5A, 2.5V - 7.9 nC @ 10 V ±12V 870 pF @ 10 V - 2.4W (Ta) 150°C (TJ) - - Surface Mount 6-HUSON (2x2)
    Total 36322 Record«Prev1... 16851686168716881689169016911692...1817Next»
    TomatoElec

    Suche

     TomatoElec

    Produkte

     TomatoElec

    Telefon

     TomatoElec

    Benutzer
    TomatoElec
    [email protected]
    0755-82798135