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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    2N6796U

    2N6796U

    MOSFET N-CH 100V 8A 18ULCC

    Microsemi Corporation

    		 3,800 -
    RFQ
    		2N6796U

    Datenblatt

         		- 18-CLCC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8A (Tc) 10V 180mOhm @ 5A, 10V 4V @ 250mA 6.34 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 18-ULCC (9.14x7.49)
    2N6798

    2N6798

    MOSFET N-CH 200V 5.5A TO39

    Microsemi Corporation

    		 8,741 -
    RFQ

    -

    		 - TO-205AF Metal Can Bulk Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 400mOhm @ 3.5A, 10V 4V @ 250µA 5.29 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-39
    2N6800

    2N6800

    MOSFET N-CH 400V 3A TO39

    Microsemi Corporation

    		 6,307 -
    RFQ

    -

    		 - TO-205AF Metal Can Bulk Obsolete N-Channel MOSFET (Metal Oxide) 400 V 3A (Tc) 10V 1Ohm @ 2A, 10V 4V @ 250µA 5.75 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-39
    2N6800U

    2N6800U

    MOSFET N-CH 400V 3A 18ULCC

    Microsemi Corporation

    		 3,313 -
    RFQ
    		2N6800U

    Datenblatt

         		- 18-CLCC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 400 V 3A (Tc) 10V 1Ohm @ 2A, 10V 4V @ 250µA 5.75 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 18-ULCC (9.14x7.49)
    2N6802

    2N6802

    MOSFET N-CH 500V 2.5A TO39

    Microsemi Corporation

    		 3,642 -
    RFQ

    -

    		 - TO-205AD, TO-39-3 Metal Can Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 4.46 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-39 (TO-205AD)
    2N6802U

    2N6802U

    MOSFET N-CH 500V 2.5A 18ULCC

    Microsemi Corporation

    		 6,273 -
    RFQ
    		2N6802U

    Datenblatt

         		- 18-CLCC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 4.46 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 18-ULCC (9.14x7.49)
    2N6849

    2N6849

    MOSFET P-CH 100V 6.5A TO39

    Microsemi Corporation

    		 2,440 -
    RFQ
    		2N6849

    Datenblatt

         		- TO-205AF Metal Can Bulk Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.5A (Tc) 10V 320mOhm @ 6.5A, 10V 4V @ 250µA 34.8 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-39
    2N6849U

    2N6849U

    MOSFET P-CH 100V 6.5A 18ULCC

    Microsemi Corporation

    		 7,381 -
    RFQ
    		2N6849U

    Datenblatt

         		- 18-CLCC Bulk Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.5A (Tc) 10V 300mOhm @ 4.1A, 10V 4V @ 250µA 34.8 nC @ 10 V ±20V - - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 18-ULCC (9.14x7.49)
    IPA65R099C6XKSA1

    IPA65R099C6XKSA1

    MOSFET N-CH 650V 38A TO220

    Infineon Technologies

    		 3,585 -
    RFQ
    		IPA65R099C6XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 99mOhm @ 12.8A, 10V 3.5V @ 1.2mA 127 nC @ 10 V ±20V 2780 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-111
    IPA65R150CFDXKSA1

    IPA65R150CFDXKSA1

    MOSFET N-CH 650V 22.4A TO220

    Infineon Technologies

    		 9,781 -
    RFQ
    		IPA65R150CFDXKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 1mA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 34.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-111
    IPB65R099C6ATMA1

    IPB65R099C6ATMA1

    MOSFET N-CH 650V 38A D2PAK

    Infineon Technologies

    		 4,154 -
    RFQ
    		IPB65R099C6ATMA1

    Datenblatt

         		CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 99mOhm @ 12.8A, 10V 3.5V @ 1.2mA 127 nC @ 10 V ±20V 2780 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
    IPI65R099C6XKSA1

    IPI65R099C6XKSA1

    MOSFET N-CH 650V 38A TO262-3

    Infineon Technologies

    		 5,424 -
    RFQ
    		IPI65R099C6XKSA1

    Datenblatt

         		CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 99mOhm @ 12.8A, 10V 3.5V @ 1.2mA 127 nC @ 10 V ±20V 2780 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3-1
    IPP60R074C6XKSA1

    IPP60R074C6XKSA1

    MOSFET N-CH 600V 57.7A TO220-3

    Infineon Technologies

    		 4,659 -
    RFQ
    		IPP60R074C6XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 57.7A (Tc) 10V 74mOhm @ 21A, 10V 3.5V @ 1.4mA 138 nC @ 10 V ±20V 3020 pF @ 100 V - 480.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    IPP65R074C6XKSA1

    IPP65R074C6XKSA1

    MOSFET N-CH 650V 57.7A TO220-3

    Infineon Technologies

    		 5,025 -
    RFQ
    		IPP65R074C6XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 57.7A (Tc) 10V 74mOhm @ 13.9A, 10V 3.5V @ 1.4mA 17 nC @ 10 V ±20V 3020 pF @ 100 V - 480.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    IPP65R099C6XKSA1

    IPP65R099C6XKSA1

    MOSFET N-CH 650V 38A TO220-3

    Infineon Technologies

    		 9,149 -
    RFQ
    		IPP65R099C6XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 99mOhm @ 12.8A, 10V 3.5V @ 1.2mA 15 nC @ 10 V ±20V 2780 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    IPP65R150CFDXKSA1

    IPP65R150CFDXKSA1

    MOSFET N-CH 650V 22.4A TO220-3

    Infineon Technologies

    		 4,670 -
    RFQ
    		IPP65R150CFDXKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    IPS65R1K4C6AKMA1

    IPS65R1K4C6AKMA1

    MOSFET N-CH 650V 3.2A TO251-3

    Infineon Technologies

    		 9,903 -
    RFQ
    		IPS65R1K4C6AKMA1

    Datenblatt

         		CoolMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 3.2A (Tc) 10V 1.4Ohm @ 1A, 10V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 225 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-11
    IPU50R1K4CEBKMA1

    IPU50R1K4CEBKMA1

    MOSFET N-CH 500V 3.1A TO251-3

    Infineon Technologies

    		 9,505 -
    RFQ
    		IPU50R1K4CEBKMA1

    Datenblatt

         		CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3.1A (Tc) 13V 1.4Ohm @ 900mA, 13V 3.5V @ 70µA 8.2 nC @ 10 V ±20V 178 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    IPU50R2K0CEBKMA1

    IPU50R2K0CEBKMA1

    MOSFET N-CH 500V 2.4A TO251-3

    Infineon Technologies

    		 7,816 -
    RFQ
    		IPU50R2K0CEBKMA1

    Datenblatt

         		CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 13V 2Ohm @ 600mA, 13V 3.5V @ 50µA 6 nC @ 10 V ±20V 124 pF @ 100 V - 22W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    IPU60R600C6BKMA1

    IPU60R600C6BKMA1

    MOSFET N-CH 600V 7.3A TO251-3

    Infineon Technologies

    		 8,565 -
    RFQ
    		IPU60R600C6BKMA1

    Datenblatt

         		CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
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