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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    FQD4P40TM-AM002

    FQD4P40TM-AM002

    MOSFET P-CH 400V 2.7A DPAK

    onsemi

    		 8,860 -
    RFQ

    -

    		 QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 400 V 2.7A (Tc) 10V 3.1Ohm @ 1.35A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 680 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    FCPF11N65

    FCPF11N65

    MOSFET N-CH 650V 11A TO220F

    onsemi

    		 2,554 -
    RFQ
    		FCPF11N65

    Datenblatt

         		SuperFET™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) - 380mOhm @ 5.5A, 10V 5V @ 250µA 52 nC @ 10 V - 1490 pF @ 25 V - 36W (Tc) - - - Through Hole TO-220F-3
    CMPDM203NH TR

    CMPDM203NH TR

    MOSFET N-CH 20V 3.2A SOT-23F

    Central Semiconductor Corp

    		 8,189 -
    RFQ
    		CMPDM203NH TR

    Datenblatt

         		- SOT-23-3 Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 3.2A (Ta) 2.5V, 4.5V 50mOhm @ 1.6A, 4.5V 1.2V @ 250µA 10 nC @ 4.5 V 12V 395 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23F
    CMPDM303NH TR

    CMPDM303NH TR

    MOSFET N-CH 30V 3.6A SOT-23F

    Central Semiconductor Corp

    		 7,283 -
    RFQ
    		CMPDM303NH TR

    Datenblatt

         		- SOT-23-3 Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 2.5V, 4.5V 40mOhm @ 1.8A, 4.5V 1.2V @ 250µA 13 nC @ 4.5 V 12V 590 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23F
    AUIRFS4115-7P

    AUIRFS4115-7P

    MOSFET N-CH 150V 105A D2PAK

    Infineon Technologies

    		 9,848 -
    RFQ
    		AUIRFS4115-7P

    Datenblatt

         		HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
    AUIRFS4115-7TRL

    AUIRFS4115-7TRL

    MOSFET N-CH 150V 105A D2PAK

    Infineon Technologies

    		 9,394 -
    RFQ
    		AUIRFS4115-7TRL

    Datenblatt

         		HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
    IRFB7746PBF

    IRFB7746PBF

    MOSFET N-CH 75V 59A TO220AB

    Infineon Technologies

    		 7,425 -
    RFQ
    		IRFB7746PBF

    Datenblatt

         		StrongIRFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 59A (Tc) 6V, 10V 10.6mOhm @ 35A, 10V 3.7V @ 100µA 83 nC @ 10 V ±20V 3049 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IRFB7787PBF

    IRFB7787PBF

    MOSFET N-CH 75V 76A TO220AB

    Infineon Technologies

    		 6,943 -
    RFQ
    		IRFB7787PBF

    Datenblatt

         		HEXFET®, StrongIRFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 76A (Tc) 6V, 10V 8.4mOhm @ 46A, 10V 3.7V @ 100µA 109 nC @ 10 V ±20V 4020 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IRFSL7430PBF

    IRFSL7430PBF

    MOSFET N-CH 40V 195A D2PAK

    Infineon Technologies

    		 2,442 -
    RFQ
    		IRFSL7430PBF

    Datenblatt

         		HEXFET®, StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRFSL7434PBF

    IRFSL7434PBF

    MOSFET N-CH 40V 195A TO262

    Infineon Technologies

    		 5,380 -
    RFQ
    		IRFSL7434PBF

    Datenblatt

         		HEXFET®, StrongIRFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
    IRFSL7530PBF

    IRFSL7530PBF

    MOSFET N-CH 60V 195A TO262

    Infineon Technologies

    		 9,575 -
    RFQ
    		IRFSL7530PBF

    Datenblatt

         		HEXFET®, StrongIRFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.7V @ 250µA 411 nC @ 10 V ±20V 13703 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-262
    IRFSL7534PBF

    IRFSL7534PBF

    MOSFET N-CH 60V 195A TO262

    Infineon Technologies

    		 5,735 -
    RFQ
    		IRFSL7534PBF

    Datenblatt

         		HEXFET®, StrongIRFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V 3.7V @ 250µA 279 nC @ 10 V ±20V 10034 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-262
    IRFSL7787PBF

    IRFSL7787PBF

    MOSFET N-CH 75V 76A TO262

    Infineon Technologies

    		 5,949 -
    RFQ
    		IRFSL7787PBF

    Datenblatt

         		HEXFET®, StrongIRFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 76A (Tc) 6V, 10V 8.4mOhm @ 46A, 10V 3.7V @ 100µA 109 nC @ 10 V ±20V 4020 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
    IRLS3813TRLPBF

    IRLS3813TRLPBF

    MOSFET N-CH 30V 160A D2PAK

    Infineon Technologies

    		 2,542 -
    RFQ
    		IRLS3813TRLPBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 1.95mOhm @ 148A, 10V 2.35V @ 150µA 83 nC @ 4.5 V ±20V 8020 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AB (D2PAK)
    AOT10T60PL

    AOT10T60PL

    MOSFET N-CH 600V 10A TO220

    Alpha & Omega Semiconductor Inc.

    		 8,863 -
    RFQ
    		AOT10T60PL

    Datenblatt

         		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 700mOhm @ 5A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1595 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    PSMN8R5-108ESQ

    PSMN8R5-108ESQ

    MOSFET N-CH 108V 100A I2PAK

    NXP USA Inc.

    		 2,690 -
    RFQ

    -

    		 - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 108 V 100A (Tj) 10V 8.5mOhm @ 25A, 10V 4V @ 1mA 111 nC @ 10 V ±20V 5512 pF @ 50 V - 263W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK
    TK10A60E,S5X

    TK10A60E,S5X

    MOSFET N-CH 600V 10A TO220SIS

    Toshiba Semiconductor and Storage

    		 8,862 -
    RFQ
    		TK10A60E,S5X

    Datenblatt

         		- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Ta) 10V 750mOhm @ 5A, 10V 4V @ 1mA 40 nC @ 10 V ±30V 1300 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK12A50E,S5X

    TK12A50E,S5X

    MOSFET N-CH 500V 12A TO220SIS

    Toshiba Semiconductor and Storage

    		 2,238 -
    RFQ
    		TK12A50E,S5X

    Datenblatt

         		- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Ta) 10V 520mOhm @ 6A, 10V 4V @ 1.2mA 40 nC @ 10 V ±30V 1300 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    BUK761R5-40EJ

    BUK761R5-40EJ

    MOSFET N-CH 40V 120A D2PAK

    NXP USA Inc.

    		 6,607 -
    RFQ

    -

    		 TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.51mOhm @ 25A, 10V 4V @ 1mA 145 nC @ 10 V ±20V 11340 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    2SJ652-1E

    2SJ652-1E

    MOSFET P-CH 60V 28A TO220F-3SG

    onsemi

    		 8,321 -
    RFQ

    -

    		 - TO-220-3 Full Pack Tube Obsolete P-Channel MOSFET (Metal Oxide) 60 V 28A (Ta) 4V, 10V 38mOhm @ 14A, 10V - 80 nC @ 10 V ±20V 4360 pF @ 20 V - 2W (Ta), 30W (Tc) 150°C (TJ) - - Through Hole TO-220F-3SG
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