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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    PSMN013-100XS,127

    PSMN013-100XS,127

    MOSFET N-CH 100V 35.2A TO220F

    NXP USA Inc.

    		 4,030 -
    RFQ
    		PSMN013-100XS,127

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 35.2A (Tc) 10V 13.9mOhm @ 10A, 10V 4V @ 1mA 57.5 nC @ 10 V ±20V 3195 pF @ 50 V - 48.4W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F
    PSMN016-100XS,127

    PSMN016-100XS,127

    MOSFET N-CH 100V 32.1A TO220F

    NXP USA Inc.

    		 5,588 -
    RFQ

    -

    		 - TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 32.1A (Tc) 10V 16mOhm @ 10A, 10V 4V @ 1mA 46.2 nC @ 10 V ±20V 2404 pF @ 50 V - 46.1W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F
    PSMN027-100XS,127

    PSMN027-100XS,127

    MOSFET N-CH 100V 23.4A TO220F

    Nexperia USA Inc.

    		 5,850 -
    RFQ
    		PSMN027-100XS,127

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 23.4A (Tc) 10V 26.8mOhm @ 5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1624 pF @ 50 V - 41.1W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F
    PSMN5R0-100XS,127

    PSMN5R0-100XS,127

    MOSFET N-CH 100V 67.5A TO220F

    NXP USA Inc.

    		 2,489 -
    RFQ

    -

    		 - TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 67.5A (Tc) 10V 5mOhm @ 15A, 10V 4V @ 1mA 153 nC @ 10 V ±20V 9900 pF @ 50 V - 63.8W (Tc) - - - Through Hole TO-220F
    PSMN5R6-100XS,127

    PSMN5R6-100XS,127

    MOSFET N-CH 100V 61.8A TO220F

    NXP USA Inc.

    		 8,896 -
    RFQ

    -

    		 - TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 61.8A (Tc) 10V 5.6mOhm @ 15A, 10V 4V @ 1mA 145 nC @ 10 V ±20V 8061 pF @ 50 V - 60W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F
    PSMN7R0-100XS,127

    PSMN7R0-100XS,127

    MOSFET N-CH 100V 55A TO220F

    NXP USA Inc.

    		 3,012 -
    RFQ
    		PSMN7R0-100XS,127

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 10V 6.8mOhm @ 15A, 10V 4V @ 1mA 121 nC @ 10 V ±20V 6686 pF @ 50 V - 57.7W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F
    BSF030NE2LQXUMA1

    BSF030NE2LQXUMA1

    MOSFET N-CH 25V 24A/75A 2WDSON

    Infineon Technologies

    		 2,372 -
    RFQ
    		BSF030NE2LQXUMA1

    Datenblatt

         		OptiMOS™ 3-WDSON Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 24A (Ta), 75A (Tc) 4.5V, 10V 3mOhm @ 30A, 10V 2V @ 250µA 23 nC @ 10 V ±20V 1700 pF @ 12 V - 2.2W (Ta), 28W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2, CanPAK M™
    IPB042N10N3GE8187ATMA1

    IPB042N10N3GE8187ATMA1

    MOSFET N-CH 100V 100A D2PAK

    Infineon Technologies

    		 8,825 -
    RFQ
    		IPB042N10N3GE8187ATMA1

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 4.2mOhm @ 50A, 10V 3.5V @ 150µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    IPB180N03S4LH0ATMA1

    IPB180N03S4LH0ATMA1

    MOSFET N-CH 30V 180A TO263-7

    Infineon Technologies

    		 3,008 -
    RFQ
    		IPB180N03S4LH0ATMA1

    Datenblatt

         		OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 180A (Tc) 4.5V, 10V 0.95mOhm @ 100A, 10V 2.2V @ 200µA 300 nC @ 10 V ±16V 23000 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-3
    IPB45N04S4L08ATMA1

    IPB45N04S4L08ATMA1

    MOSFET N-CH 40V 45A TO263-3-2

    Infineon Technologies

    		 2,568 -
    RFQ
    		IPB45N04S4L08ATMA1

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 45A (Tc) 4.5V, 10V 7.6mOhm @ 45A, 10V 2.2V @ 17µA 30 nC @ 10 V +20V, -16V 2340 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    IPB65R660CFDATMA1

    IPB65R660CFDATMA1

    MOSFET N-CH 650V 6A D2PAK

    Infineon Technologies

    		 9,814 -
    RFQ
    		IPB65R660CFDATMA1

    Datenblatt

         		CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 2.1A, 10V 4.5V @ 200µA 22 nC @ 10 V ±20V 615 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
    IPD100N06S403ATMA1

    IPD100N06S403ATMA1

    MOSFET N-CH 60V 100A TO252-3-11

    Infineon Technologies

    		 7,368 -
    RFQ
    		IPD100N06S403ATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.5mOhm @ 100A, 10V 4V @ 90µA 128 nC @ 10 V ±20V 10400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
    IPD50N06S4L12ATMA1

    IPD50N06S4L12ATMA1

    MOSFET N-CH 60V 50A TO252-3-11

    Infineon Technologies

    		 5,397 -
    RFQ
    		IPD50N06S4L12ATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 12mOhm @ 50A, 10V 2.2V @ 20µA 40 nC @ 10 V ±16V 2890 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
    IPD65R660CFDBTMA1

    IPD65R660CFDBTMA1

    MOSFET N-CH 650V 6A TO252-3

    Infineon Technologies

    		 2,884 -
    RFQ
    		IPD65R660CFDBTMA1

    Datenblatt

         		CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 2.1A, 10V 4.5V @ 200µA 22 nC @ 10 V ±20V 615 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    BSB012NE2LX

    BSB012NE2LX

    MOSFET N-CH 25V 37A/170A 2WDSON

    Infineon Technologies

    		 4,230 -
    RFQ
    		BSB012NE2LX

    Datenblatt

         		OptiMOS™ 3-WDSON Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 37A (Ta), 170A (Tc) 4.5V, 10V 1.2mOhm @ 30A, 10V 2V @ 250µA 67 nC @ 10 V ±20V 4900 pF @ 12 V - 2.8W (Ta), 57W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2, CanPAK M™
    BSS84PH6327XTSA1

    BSS84PH6327XTSA1

    MOSFET P-CH 60V 170MA SOT23-3

    Infineon Technologies

    		 2,496 -
    RFQ
    		BSS84PH6327XTSA1

    Datenblatt

         		SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 60 V 170mA (Ta) 4.5V, 10V 8Ohm @ 170mA, 10V 2V @ 20µA 1.5 nC @ 10 V ±20V 19 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT23
    SN7002NH6327XTSA1

    SN7002NH6327XTSA1

    MOSFET N-CH 60V 200MA SOT23-3

    Infineon Technologies

    		 5,790 -
    RFQ
    		SN7002NH6327XTSA1

    Datenblatt

         		SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 1.8V @ 26µA 1.5 nC @ 10 V ±20V 45 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-SOT23
    BUZ30AHXKSA1

    BUZ30AHXKSA1

    MOSFET N-CH 200V 21A TO220-3

    Infineon Technologies

    		 3,465 -
    RFQ
    		BUZ30AHXKSA1

    Datenblatt

         		SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 21A (Tc) 10V 130mOhm @ 13.5A, 10V 4V @ 1mA - ±20V 1900 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
    BUZ31L H

    BUZ31L H

    MOSFET N-CH 200V 13.5A TO220-3

    Infineon Technologies

    		 5,954 -
    RFQ
    		BUZ31L H

    Datenblatt

         		SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 13.5A (Tc) 5V 200mOhm @ 7A, 5V 2V @ 1mA - ±20V 1600 pF @ 25 V - 95W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    BUZ32 H

    BUZ32 H

    MOSFET N-CH 200V 9.5A TO220-3

    Infineon Technologies

    		 9,378 -
    RFQ
    		BUZ32 H

    Datenblatt

         		SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.5A (Tc) 10V 400mOhm @ 6A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
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