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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NP88N075MUE-S18-AY

    NP88N075MUE-S18-AY

    MOSFET N-CH 75V 88A TO220-3

    Renesas Electronics Corporation

    		 8,852 -
    RFQ
    		NP88N075MUE-S18-AY

    Datenblatt

         		- TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 75 V 88A (Tc) 10V 8.5mOhm @ 44A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 12300 pF @ 25 V - 1.8W (Ta), 288W (Tc) 175°C (TJ) - - Through Hole TO-220-3
    NP90N04MUG-S18-AY

    NP90N04MUG-S18-AY

    MOSFET N-CH 40V 90A TO220-3

    Renesas Electronics Corporation

    		 8,144 -
    RFQ
    		NP90N04MUG-S18-AY

    Datenblatt

         		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 3mOhm @ 45A, 10V 4V @ 250µA 182 nC @ 10 V ±20V 11200 pF @ 25 V - 1.8W (Ta), 217W (Tc) 175°C (TJ) - - Through Hole TO-220-3
    NP90N06VLG-E1-AY

    NP90N06VLG-E1-AY

    MOSFET N-CH 60V 90A TO252

    Renesas Electronics Corporation

    		 4,165 -
    RFQ
    		NP90N06VLG-E1-AY

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 7.8mOhm @ 45A, 10V 2.5V @ 250µA 135 nC @ 10 V ±20V 6900 pF @ 25 V - 1.2W (Ta), 105W (Tc) 175°C (TJ) - - Surface Mount TO-252
    RJK6024DPD-00#J2

    RJK6024DPD-00#J2

    MOSFET N-CH 600V 400MA MP3A

    Renesas Electronics Corporation

    		 2,394 -
    RFQ
    		RJK6024DPD-00#J2

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 400mA (Ta) 10V 42Ohm @ 200mA, 10V - 4.3 nC @ 10 V ±30V 37.5 pF @ 25 V - 27.2W (Tc) 150°C (TJ) - - Surface Mount MP-3A
    DMS3016SFG-7

    DMS3016SFG-7

    MOSFET N-CH 30V 7A POWERDI3333-8

    Diodes Incorporated

    		 5,475 -
    RFQ
    		DMS3016SFG-7

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 13mOhm @ 11.2A, 10V 2.2V @ 250µA 44.6 nC @ 10 V ±12V 1886 pF @ 15 V Schottky Diode (Body) 980mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount POWERDI3333-8
    SIHP30N60E-E3

    SIHP30N60E-E3

    MOSFET N-CH 600V 29A TO220AB

    Vishay Siliconix

    		 2,193 -
    RFQ
    		SIHP30N60E-E3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    SIHG30N60E-E3

    SIHG30N60E-E3

    MOSFET N-CH 600V 29A TO247AC

    Vishay Siliconix

    		 8,540 -
    RFQ
    		SIHG30N60E-E3

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    TK10S04K3L(T6L1,NQ

    TK10S04K3L(T6L1,NQ

    MOSFET N-CH 40V 10A DPAK

    Toshiba Semiconductor and Storage

    		 2,123 -
    RFQ
    		TK10S04K3L(T6L1,NQ

    Datenblatt

         		U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 6V, 10V 28mOhm @ 5A, 10V 3V @ 1mA 10 nC @ 10 V ±20V 410 pF @ 10 V - 25W (Tc) 175°C (TJ) - - Surface Mount DPAK+
    TK11A60D(STA4,Q,M)

    TK11A60D(STA4,Q,M)

    MOSFET N-CH 600V 11A TO220SIS

    Toshiba Semiconductor and Storage

    		 6,995 -
    RFQ
    		TK11A60D(STA4,Q,M)

    Datenblatt

         		π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 650mOhm @ 5.5A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 1550 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK15A60D(STA4,Q,M)

    TK15A60D(STA4,Q,M)

    MOSFET N-CH 600V 15A TO220SIS

    Toshiba Semiconductor and Storage

    		 2,606 -
    RFQ
    		TK15A60D(STA4,Q,M)

    Datenblatt

         		π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15A (Ta) 10V 370mOhm @ 7.5A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2600 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK16A45D(STA4,Q,M)

    TK16A45D(STA4,Q,M)

    MOSFET N-CH 450V 16A TO220SIS

    Toshiba Semiconductor and Storage

    		 6,048 -
    RFQ
    		TK16A45D(STA4,Q,M)

    Datenblatt

         		- TO-220-3 Full Pack Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 450 V 16A - 270mOhm @ 8A, 10V - - - - - - - - - Through Hole TO-220SIS
    TK16A55D(STA4,Q,M)

    TK16A55D(STA4,Q,M)

    MOSFET N-CH 550V 16A TO220SIS

    Toshiba Semiconductor and Storage

    		 4,421 -
    RFQ
    		TK16A55D(STA4,Q,M)

    Datenblatt

         		π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 16A (Ta) - 330mOhm @ 8A, 10V 4V @ 1mA 45 nC @ 10 V - 2600 pF @ 25 V - - 150°C (TJ) - - Through Hole TO-220SIS
    TK18E10K3,S1X(S

    TK18E10K3,S1X(S

    MOSFET N-CH 100V 18A TO220-3

    Toshiba Semiconductor and Storage

    		 9,959 -
    RFQ
    		TK18E10K3,S1X(S

    Datenblatt

         		U-MOSIV TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 18A (Ta) - 42mOhm @ 9A, 10V - 33 nC @ 10 V - - - - 150°C (TJ) - - Through Hole TO-220-3
    TK20P04M1,RQ(S

    TK20P04M1,RQ(S

    MOSFET N-CH 40V 20A DPAK

    Toshiba Semiconductor and Storage

    		 2,536 -
    RFQ
    		TK20P04M1,RQ(S

    Datenblatt

         		U-MOSVI-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 20A (Ta) 4.5V, 10V 29mOhm @ 10A, 10V 2.3V @ 100µA 15 nC @ 10 V ±20V 985 pF @ 10 V - 27W (Tc) 150°C (TJ) - - Surface Mount DPAK
    TK20S04K3L(T6L1,NQ

    TK20S04K3L(T6L1,NQ

    MOSFET N-CH 40V 20A DPAK

    Toshiba Semiconductor and Storage

    		 4,802 -
    RFQ
    		TK20S04K3L(T6L1,NQ

    Datenblatt

         		U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 20A (Ta) 6V, 10V 14mOhm @ 10A, 10V 3V @ 1mA 18 nC @ 10 V ±20V 820 pF @ 10 V - 38W (Tc) 175°C (TJ) - - Surface Mount DPAK+
    TK20S06K3L(T6L1,NQ

    TK20S06K3L(T6L1,NQ

    MOSFET N-CH 60V 20A DPAK

    Toshiba Semiconductor and Storage

    		 6,402 -
    RFQ
    		TK20S06K3L(T6L1,NQ

    Datenblatt

         		U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta) 6V, 10V 29mOhm @ 10A, 10V 3V @ 1mA 18 nC @ 10 V ±20V 780 pF @ 10 V - 38W (Tc) 175°C (TJ) - - Surface Mount DPAK+
    TK25E06K3,S1X(S

    TK25E06K3,S1X(S

    MOSFET N-CH 60V 25A TO220-3

    Toshiba Semiconductor and Storage

    		 7,605 -
    RFQ
    		TK25E06K3,S1X(S

    Datenblatt

         		U-MOSIV TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 25A (Ta) - 18mOhm @ 12.5A, 10V - 29 nC @ 10 V - - - 60W (Tc) 150°C (TJ) - - Through Hole TO-220-3
    TK2P60D(TE16L1,NQ)

    TK2P60D(TE16L1,NQ)

    MOSFET N-CH 600V 2A PW-MOLD

    Toshiba Semiconductor and Storage

    		 8,820 -
    RFQ
    		TK2P60D(TE16L1,NQ)

    Datenblatt

         		π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2A (Ta) 10V 4.3Ohm @ 1A, 10V 4.4V @ 1mA 7 nC @ 10 V ±30V 280 pF @ 25 V - 60W (Tc) 150°C (TJ) - - Surface Mount PW-MOLD
    TK30S06K3L(T6L1,NQ

    TK30S06K3L(T6L1,NQ

    MOSFET N-CH 60V 30A DPAK

    Toshiba Semiconductor and Storage

    		 3,283 -
    RFQ
    		TK30S06K3L(T6L1,NQ

    Datenblatt

         		U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 6V, 10V 18Ohm @ 15A, 10V 3V @ 1mA 28 nC @ 10 V ±20V 1350 pF @ 10 V - 58W (Tc) 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK+
    TK40E10K3,S1X(S

    TK40E10K3,S1X(S

    MOSFET N-CH 100V 40A TO220-3

    Toshiba Semiconductor and Storage

    		 3,959 -
    RFQ
    		TK40E10K3,S1X(S

    Datenblatt

         		U-MOSIV TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 40A (Ta) - 15mOhm @ 20A, 10V 4V @ 1mA 84 nC @ 10 V - 4000 pF @ 10 V - - - - - Through Hole TO-220-3
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