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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    TK40P03M1(T6RDS-Q)

    TK40P03M1(T6RDS-Q)

    MOSFET N-CH 30V 40A DPAK

    Toshiba Semiconductor and Storage

    		 7,945 -
    RFQ
    		TK40P03M1(T6RDS-Q)

    Datenblatt

         		U-MOSVI-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 4.5V, 10V 10.8mOhm @ 20A, 10V 2.3V @ 100µA 17.5 nC @ 10 V ±20V 1150 pF @ 10 V - - - - - Surface Mount DPAK
    TK40S10K3Z(T6L1,NQ

    TK40S10K3Z(T6L1,NQ

    MOSFET N-CH 100V 40A DPAK

    Toshiba Semiconductor and Storage

    		 9,847 -
    RFQ
    		TK40S10K3Z(T6L1,NQ

    Datenblatt

         		U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 40A (Ta) 10V 18mOhm @ 20A, 10V 4V @ 1mA 61 nC @ 10 V ±20V 3110 pF @ 10 V - 93W (Tc) 175°C (TJ) - - Surface Mount DPAK+
    TK45P03M1,RQ(S

    TK45P03M1,RQ(S

    MOSFET N-CH 30V 45A DPAK

    Toshiba Semiconductor and Storage

    		 7,402 -
    RFQ
    		TK45P03M1,RQ(S

    Datenblatt

         		U-MOSVI-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 45A (Ta) 4.5V, 10V 9.7mOhm @ 22.5A, 10V 2.3V @ 200µA 25 nC @ 10 V ±20V 1500 pF @ 10 V - - - - - Surface Mount DPAK
    TK4A53D(STA4,Q,M)

    TK4A53D(STA4,Q,M)

    MOSFET N-CH 525V 4A TO220SIS

    Toshiba Semiconductor and Storage

    		 5,468 -
    RFQ
    		TK4A53D(STA4,Q,M)

    Datenblatt

         		π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 525 V 4A (Ta) 10V 1.7Ohm @ 2A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK4A55D(STA4,Q,M)

    TK4A55D(STA4,Q,M)

    MOSFET N-CH 550V 4A TO220SIS

    Toshiba Semiconductor and Storage

    		 3,133 -
    RFQ
    		TK4A55D(STA4,Q,M)

    Datenblatt

         		π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 4A (Ta) 10V 1.88Ohm @ 2A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK4A60DB(STA4,Q,M)

    TK4A60DB(STA4,Q,M)

    MOSFET N-CH 600V 3.7A TO220SIS

    Toshiba Semiconductor and Storage

    		 5,265 -
    RFQ

    -

    		 π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.7A (Ta) 10V 2Ohm @ 1.9A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK4A65DA(STA4,Q,M)

    TK4A65DA(STA4,Q,M)

    MOSFET N-CH 650V 3.5A TO220SIS

    Toshiba Semiconductor and Storage

    		 6,924 -
    RFQ

    -

    		 π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 3.5A (Ta) 10V 1.9Ohm @ 1.8A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK4P50D(T6RSS-Q)

    TK4P50D(T6RSS-Q)

    MOSFET N-CH 500V 4A DPAK

    Toshiba Semiconductor and Storage

    		 8,825 -
    RFQ
    		TK4P50D(T6RSS-Q)

    Datenblatt

         		π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 4A (Ta) 10V 2Ohm @ 2A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
    TK4P55DA(T6RSS-Q)

    TK4P55DA(T6RSS-Q)

    MOSFET N-CH 550V 3.5A DPAK

    Toshiba Semiconductor and Storage

    		 5,355 -
    RFQ

    -

    		 π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 550 V 3.5A (Ta) 10V 2.45Ohm @ 1.8A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
    TK4P55D(T6RSS-Q)

    TK4P55D(T6RSS-Q)

    MOSFET N-CH 550V 4A DPAK

    Toshiba Semiconductor and Storage

    		 6,302 -
    RFQ
    		TK4P55D(T6RSS-Q)

    Datenblatt

         		π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 550 V 4A (Ta) 10V 1.88Ohm @ 2A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
    TK4P60DA(T6RSS-Q)

    TK4P60DA(T6RSS-Q)

    MOSFET N-CH 600V 3.5A DPAK

    Toshiba Semiconductor and Storage

    		 5,443 -
    RFQ

    -

    		 π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 3.5A (Ta) 10V 2.2Ohm @ 1.8A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
    TK4P60DB(T6RSS-Q)

    TK4P60DB(T6RSS-Q)

    MOSFET N-CH 600V 3.7A DPAK

    Toshiba Semiconductor and Storage

    		 6,312 -
    RFQ

    -

    		 π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 3.7A (Ta) 10V 2Ohm @ 1.9A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
    TK50E06K3A,S1X(S

    TK50E06K3A,S1X(S

    MOSFET N-CH 60V 50A TO220-3

    Toshiba Semiconductor and Storage

    		 5,229 -
    RFQ
    		TK50E06K3A,S1X(S

    Datenblatt

         		U-MOSIV TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 8.5mOhm @ 25A, 10V - 54 nC @ 10 V - - - - - - - Through Hole TO-220-3
    TK50E06K3(S1SS-Q)

    TK50E06K3(S1SS-Q)

    MOSFET N-CH 60V 50A TO220-3

    Toshiba Semiconductor and Storage

    		 5,209 -
    RFQ

    -

    		 U-MOSIV TO-220-3 Tube Obsolete - - - - - - - - - - - - - - - Through Hole TO-220-3
    TK50E08K3,S1X(S

    TK50E08K3,S1X(S

    MOSFET N-CH 75V 50A TO220-3

    Toshiba Semiconductor and Storage

    		 8,361 -
    RFQ
    		TK50E08K3,S1X(S

    Datenblatt

         		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 50A (Tc) - 12mOhm @ 25A, 10V - 55 nC @ 10 V - - - - - - - Through Hole TO-220-3
    TK50E10K3(S1SS-Q)

    TK50E10K3(S1SS-Q)

    MOSFET N-CH 100V 50A TO-220AB

    Toshiba Semiconductor and Storage

    		 8,179 -
    RFQ

    -

    		 - - Tube Obsolete - - - - - - - - - - - - - - - Through Hole TO-220-3
    TK60E08K3,S1X(S

    TK60E08K3,S1X(S

    MOSFET N-CH 75V 60A TO220-3

    Toshiba Semiconductor and Storage

    		 5,814 -
    RFQ

    -

    		 - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 60A - 9mOhm @ 30A, 10V - 75 nC @ 10 V - - - 128W - - - Through Hole TO-220-3
    TK60P03M1,RQ(S

    TK60P03M1,RQ(S

    MOSFET N-CH 30V 60A DPAK

    Toshiba Semiconductor and Storage

    		 2,530 -
    RFQ

    -

    		 U-MOSVI-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 60A (Ta) 4.5V, 10V 6.4mOhm @ 30A, 10V 2.3V @ 500µA 40 nC @ 10 V ±20V 2700 pF @ 10 V - 63W (Tc) 150°C (TJ) - - Surface Mount DPAK
    TK65S04K3L(T6L1,NQ

    TK65S04K3L(T6L1,NQ

    MOSFET N-CH 40V 65A DPAK

    Toshiba Semiconductor and Storage

    		 9,208 -
    RFQ

    -

    		 U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 65A (Ta) 6V, 10V 4.5mOhm @ 32.5A, 10V 3V @ 1mA 63 nC @ 10 V ±20V 2800 pF @ 10 V - 88W (Tc) 175°C (TJ) - - Surface Mount DPAK+
    TK80S04K3L(T6L1,NQ

    TK80S04K3L(T6L1,NQ

    MOSFET N-CH 40V 80A DPAK

    Toshiba Semiconductor and Storage

    		 4,452 -
    RFQ

    -

    		 U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Ta) 6V, 10V 3.1mOhm @ 40A, 10V 3V @ 1mA 87 nC @ 10 V ±20V 4340 pF @ 10 V - 100W (Tc) 175°C (TJ) - - Surface Mount DPAK+
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