FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
BUZ73H3046XKSA1

BUZ73H3046XKSA1

MOSFET N-CH 200V 7A TO220-3

Infineon Technologies

3,025 -
RFQ
BUZ73H3046XKSA1

Datenblatt

SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
BUZ73A H

BUZ73A H

MOSFET N-CH 200V 5.5A TO220-3

Infineon Technologies

8,993 -
RFQ
BUZ73A H

Datenblatt

SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 600mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
BUZ73A H3046

BUZ73A H3046

MOSFET N-CH 200V 5.5A TO220-3

Infineon Technologies

9,890 -
RFQ
BUZ73A H3046

Datenblatt

SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 600mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
BUZ73LHXKSA1

BUZ73LHXKSA1

MOSFET N-CH 200V 7A TO220-3

Infineon Technologies

4,472 -
RFQ
BUZ73LHXKSA1

Datenblatt

SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 5V 400mOhm @ 3.5A, 5V 2V @ 1mA - ±20V 840 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPA65R110CFDXKSA1

IPA65R110CFDXKSA1

MOSFET N-CH 650V 31.2A TO220

Infineon Technologies

6,689 -
RFQ
IPA65R110CFDXKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 34.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-111
IPA65R190C6XKSA1

IPA65R190C6XKSA1

MOSFET N-CH 650V 20.2A TO220

Infineon Technologies

2,029 -
RFQ
IPA65R190C6XKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-111
IPA65R190CFDXKSA1

IPA65R190CFDXKSA1

MOSFET N-CH 650V 17.5A TO220

Infineon Technologies

4,081 -
RFQ
IPA65R190CFDXKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 730µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-111
IPA65R310CFDXKSA1

IPA65R310CFDXKSA1

MOSFET N-CH 650V 11.4A TO220

Infineon Technologies

4,316 -
RFQ
IPA65R310CFDXKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 440µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-111
IPA65R420CFDXKSA1

IPA65R420CFDXKSA1

MOSFET N-CH 650V 8.7A TO220

Infineon Technologies

7,340 -
RFQ
IPA65R420CFDXKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 340µA 32 nC @ 10 V ±20V 870 pF @ 100 V - 31.2W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-111
IPA65R600C6XKSA1

IPA65R600C6XKSA1

MOSFET N-CH 650V 7.3A TO220

Infineon Technologies

5,753 -
RFQ
IPA65R600C6XKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-111
IPA65R660CFDXKSA1

IPA65R660CFDXKSA1

MOSFET N-CH 650V 6A TO220

Infineon Technologies

4,745 -
RFQ
IPA65R660CFDXKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 2.1A, 10V 4.5V @ 200µA 22 nC @ 10 V ±20V 615 pF @ 100 V - 27.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-111
IPI110N20N3GAKSA1

IPI110N20N3GAKSA1

MOSFET N-CH 200V 88A TO262-3

Infineon Technologies

4,466 -
RFQ
IPI110N20N3GAKSA1

Datenblatt

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 88A (Tc) 10V 11mOhm @ 88A, 10V 4V @ 270µA 87 nC @ 10 V ±20V 7100 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI320N20N3GAKSA1

IPI320N20N3GAKSA1

MOSFET N-CH 200V 34A TO262-3

Infineon Technologies

6,097 -
RFQ
IPI320N20N3GAKSA1

Datenblatt

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 34A (Tc) 10V 32mOhm @ 34A, 10V 4V @ 90µA 29 nC @ 10 V ±20V 2350 pF @ 100 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI50R299CPXKSA1

IPI50R299CPXKSA1

MOSFET N-CH 500V 12A TO262-3

Infineon Technologies

7,088 -
RFQ
IPI50R299CPXKSA1

Datenblatt

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 31 nC @ 10 V ±20V 1190 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPI530N15N3GXKSA1

IPI530N15N3GXKSA1

MOSFET N-CH 150V 21A TO262-3

Infineon Technologies

7,150 -
RFQ
IPI530N15N3GXKSA1

Datenblatt

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 8V, 10V 53mOhm @ 18A, 10V 4V @ 35µA 12 nC @ 10 V ±20V 887 pF @ 75 V - 68W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI65R110CFDXKSA1

IPI65R110CFDXKSA1

MOSFET N-CH 650V 31.2A TO262-3

Infineon Technologies

4,485 -
RFQ
IPI65R110CFDXKSA1

Datenblatt

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPI65R190CFDXKSA1

IPI65R190CFDXKSA1

MOSFET N-CH 650V 17.5A TO262-3

Infineon Technologies

6,974 -
RFQ
IPI65R190CFDXKSA1

Datenblatt

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 730µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPI65R310CFDXKSA1

IPI65R310CFDXKSA1

MOSFET N-CH 650V 11.4A TO262-3

Infineon Technologies

3,417 -
RFQ
IPI65R310CFDXKSA1

Datenblatt

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 440µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPI65R420CFDXKSA1

IPI65R420CFDXKSA1

MOSFET N-CH 650V 8.7A TO262-3

Infineon Technologies

2,162 -
RFQ
IPI65R420CFDXKSA1

Datenblatt

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 340µA 32 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPI65R600C6XKSA1

IPI65R600C6XKSA1

MOSFET N-CH 650V 7.3A TO262-3

Infineon Technologies

6,560 -
RFQ
IPI65R600C6XKSA1

Datenblatt

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
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