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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IRF8252PBF

    IRF8252PBF

    MOSFET N-CH 25V 25A 8SO

    Infineon Technologies

    		 4,339 -
    RFQ
    		IRF8252PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 25A (Ta) 4.5V, 10V 2.7mOhm @ 25A, 10V 2.35V @ 100µA 53 nC @ 4.5 V ±20V 5305 pF @ 13 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF8788PBF

    IRF8788PBF

    MOSFET N-CH 30V 24A 8SO

    Infineon Technologies

    		 8,744 -
    RFQ
    		IRF8788PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta) 4.5V, 10V 2.8mOhm @ 24A, 10V 2.35V @ 100µA 66 nC @ 4.5 V ±20V 5720 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRFR1018ETRRPBF

    IRFR1018ETRRPBF

    MOSFET N-CH 60V 56A DPAK

    Infineon Technologies

    		 4,705 -
    RFQ
    		IRFR1018ETRRPBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    IRFR3410TRRPBF

    IRFR3410TRRPBF

    MOSFET N-CH 100V 31A DPAK

    Infineon Technologies

    		 3,293 -
    RFQ
    		IRFR3410TRRPBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 10V 39mOhm @ 18A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1690 pF @ 25 V - 3W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    IRFS4010TRRPBF

    IRFS4010TRRPBF

    MOSFET N-CH 100V 180A D2PAK

    Infineon Technologies

    		 8,352 -
    RFQ
    		IRFS4010TRRPBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRLR8726PBF

    IRLR8726PBF

    MOSFET N-CH 30V 86A DPAK

    Infineon Technologies

    		 5,878 -
    RFQ
    		IRLR8726PBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 86A (Tc) 4.5V, 10V 5.8mOhm @ 25A, 10V 2.35V @ 50µA 23 nC @ 4.5 V ±20V 2150 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    IRLR8729PBF

    IRLR8729PBF

    MOSFET N-CH 30V 58A D-PAK

    Infineon Technologies

    		 2,336 -
    RFQ
    		IRLR8729PBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 58A (Tc) 4.5V, 10V 8.9mOhm @ 25A, 10V 2.35V @ 25µA 16 nC @ 4.5 V ±20V 1350 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    IRLR8729TRLPBF

    IRLR8729TRLPBF

    MOSFET N-CH 30V 58A D-PAK

    Infineon Technologies

    		 8,048 -
    RFQ
    		IRLR8729TRLPBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 58A (Tc) 4.5V, 10V 8.9mOhm @ 25A, 10V 2.35V @ 25µA 16 nC @ 4.5 V ±20V 1350 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    IRLS3036TRRPBF

    IRLS3036TRRPBF

    MOSFET N-CH 60V 195A D2PAK

    Infineon Technologies

    		 7,233 -
    RFQ
    		IRLS3036TRRPBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRLU8256PBF

    IRLU8256PBF

    MOSFET N-CH 25V 81A IPAK

    Infineon Technologies

    		 2,019 -
    RFQ
    		IRLU8256PBF

    Datenblatt

         		HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 81A (Tc) 4.5V, 10V 5.7mOhm @ 25A, 10V 2.35V @ 25µA 15 nC @ 4.5 V ±20V 1470 pF @ 13 V - 63W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    IRLU8259PBF

    IRLU8259PBF

    MOSFET N-CH 25V 57A IPAK

    Infineon Technologies

    		 2,396 -
    RFQ
    		IRLU8259PBF

    Datenblatt

         		HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 57A (Tc) 4.5V, 10V 8.7mOhm @ 21A, 10V 2.35V @ 25µA 10 nC @ 4.5 V ±20V 900 pF @ 13 V - 48W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    2SJ621-T1B-AT

    2SJ621-T1B-AT

    MOSFET P-CH 12V SC-96 SOT-23

    Renesas Electronics Corporation

    		 3,925 -
    RFQ
    		2SJ621-T1B-AT

    Datenblatt

         		- SC-96 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12 V 3.5A (Ta) - 44mOhm @ 2A, 4.5V 1.5V @ 1mA 6.2 nC @ 4 V - 630 pF @ 10 V - - - - - Surface Mount SC-96-3, Thin Mini Mold
    2SJ624-T1B-AT

    2SJ624-T1B-AT

    MOSFET P-CH 20V SC-96 SOT-23

    Renesas Electronics Corporation

    		 2,436 -
    RFQ
    		2SJ624-T1B-AT

    Datenblatt

         		- SC-96 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) - 54mOhm @ 2.5A, 4.5V 1.5V @ 1mA 8.1 nC @ 4 V - 813 pF @ 10 V - - - - - Surface Mount SC-96-3, Thin Mini Mold
    2SK3479-Z-E1-AZ

    2SK3479-Z-E1-AZ

    MOSFET N-CH 100V 83A TO-263

    Renesas Electronics Corporation

    		 6,408 -
    RFQ
    		2SK3479-Z-E1-AZ

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 83A (Tc) - 11mOhm @ 42A, 10V - 210 nC @ 10 V - 11000 pF @ 10 V - 1.5W (Ta), 125W (Tc) 150°C (TJ) - - Surface Mount TO-263, TO-220SMD
    2SK3576-T1B-AT

    2SK3576-T1B-AT

    MOSFET N-CH 20V SC-96 SOT-23

    Renesas Electronics Corporation

    		 6,732 -
    RFQ
    		2SK3576-T1B-AT

    Datenblatt

         		- SC-96 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) - 50mOhm @ 2A, 4.5V 1.5V @ 1mA 3.3 nC @ 4 V - 250 pF @ 10 V - - - - - Surface Mount SC-96-3, Thin Mini Mold
    UPA1815GR-9JG-E1-A

    UPA1815GR-9JG-E1-A

    MOSFET P-CH 20V 8-TSSOP

    Renesas Electronics Corporation

    		 4,437 -
    RFQ
    		UPA1815GR-9JG-E1-A

    Datenblatt

         		- 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 7A (Ta) - 15mOhm @ 3.5A, 4.5V 1.5V @ 1mA 25 nC @ 4 V - 3000 pF @ 10 V - - - - - Surface Mount 8-TSSOP
    UPA1917TE-T1-AT

    UPA1917TE-T1-AT

    MOSFET P-CH 20V SC-95

    Renesas Electronics Corporation

    		 7,990 -
    RFQ
    		UPA1917TE-T1-AT

    Datenblatt

         		- SC-95-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) - 53mOhm @ 3A, 4.5V 1.5V @ 1mA 8.1 nC @ 4 V - 835 pF @ 10 V - - - - - Surface Mount SC-95-6, Mini Mold Thin
    UPA1919TE-T1-AT

    UPA1919TE-T1-AT

    MOSFET P-CH 20V SC-95

    Renesas Electronics Corporation

    		 8,639 -
    RFQ
    		UPA1919TE-T1-AT

    Datenblatt

         		- SC-95-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) - 58mOhm @ 3A, 4.5V 1.5V @ 1mA 6 nC @ 4 V - 680 pF @ 10 V - - - - - Surface Mount SC-95-6, Mini Mold Thin
    UPA1911ATE-T1-A

    UPA1911ATE-T1-A

    MOSFET P-CH 20V SC-95

    Renesas Electronics Corporation

    		 9,224 -
    RFQ
    		UPA1911ATE-T1-A

    Datenblatt

         		- SC-95-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.5A (Ta) - 115mOhm @ 1.5A, 4.5V 1.5V @ 1mA 2.3 nC @ 4 V - 370 pF @ 10 V - - - - - Surface Mount SC-95-6, Mini Mold Thin
    UPA1803GR-9JG-E1-A

    UPA1803GR-9JG-E1-A

    MOSFET N-CH 30V 8-TSSOP

    Renesas Electronics Corporation

    		 2,206 -
    RFQ
    		UPA1803GR-9JG-E1-A

    Datenblatt

         		- 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8A (Ta) - 12mOhm @ 4A, 10V 2.5V @ 1mA 36 nC @ 10 V - 1880 pF @ 10 V - - - - - Surface Mount 8-TSSOP
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