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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IRF1405ZSTRL7PP

    IRF1405ZSTRL7PP

    MOSFET N-CH 55V 120A D2PAK

    Infineon Technologies

    		 5,700 -
    RFQ
    		IRF1405ZSTRL7PP

    Datenblatt

         		HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRF6201TRPBF

    IRF6201TRPBF

    MOSFET N-CH 20V 27A 8SO

    Infineon Technologies

    		 9,338 -
    RFQ
    		IRF6201TRPBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 27A (Ta) 2.5V, 4.5V 2.45mOhm @ 27A, 4.5V 1.1V @ 100µA 195 nC @ 4.5 V ±12V 8555 pF @ 16 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7424GTRPBF

    IRF7424GTRPBF

    MOSFET P-CH 30V 11A 8SO

    Infineon Technologies

    		 3,589 -
    RFQ
    		IRF7424GTRPBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 13.5mOhm @ 11A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 4030 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7524D1GTRPBF

    IRF7524D1GTRPBF

    MOSFET P-CH 20V 1.7A 8USMD

    Infineon Technologies

    		 3,931 -
    RFQ
    		IRF7524D1GTRPBF

    Datenblatt

         		FETKY™ 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.7A (Ta) 2.7V, 4.5V 270mOhm @ 1.2A, 4.5V 700mV @ 250µA (Min) 8.2 nC @ 4.5 V ±12V 240 pF @ 15 V Schottky Diode (Isolated) 1.25W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-uSMD
    IRF8113GTRPBF

    IRF8113GTRPBF

    MOSFET N-CH 30V 17.2A 8SO

    Infineon Technologies

    		 6,891 -
    RFQ
    		IRF8113GTRPBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17.2A (Ta) 4.5V, 10V 5.6mOhm @ 17.2A, 10V 2.2V @ 250µA 36 nC @ 4.5 V ±20V 2910 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF9204PBF

    IRF9204PBF

    MOSFET P-CH 40V 56A TO220AB

    Infineon Technologies

    		 4,663 -
    RFQ
    		IRF9204PBF

    Datenblatt

         		HEXFET® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 40 V 56A (Ta) 4.5V, 10V 16mOhm @ 37A, 10V 3V @ 100µA 224 nC @ 10 V ±20V 7676 pF @ 25 V - 143W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IRFB3077GPBF

    IRFB3077GPBF

    MOSFET N-CH 75V 120A TO220AB

    Infineon Technologies

    		 8,640 -
    RFQ
    		IRFB3077GPBF

    Datenblatt

         		HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 9400 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IRFB4310GPBF

    IRFB4310GPBF

    MOSFET N-CH 100V 130A TO220AB

    Infineon Technologies

    		 3,214 -
    RFQ
    		IRFB4310GPBF

    Datenblatt

         		HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IRFB4310ZGPBF

    IRFB4310ZGPBF

    MOSFET N-CH 100V 120A TO220AB

    Infineon Technologies

    		 4,151 -
    RFQ
    		IRFB4310ZGPBF

    Datenblatt

         		HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IRFS4228TRLPBF

    IRFS4228TRLPBF

    MOSFET N-CH 150V 83A D2PAK

    Infineon Technologies

    		 9,112 -
    RFQ
    		IRFS4228TRLPBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 150 V 83A (Tc) 10V 15mOhm @ 33A, 10V 5V @ 250µA 107 nC @ 10 V ±30V 4530 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRFSL4229PBF

    IRFSL4229PBF

    MOSFET N-CH 250V 45A TO262

    Infineon Technologies

    		 7,108 -
    RFQ
    		IRFSL4229PBF

    Datenblatt

         		HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 45A (Tc) 10V 48mOhm @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4560 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-262
    IRLB3036GPBF

    IRLB3036GPBF

    MOSFET N-CH 60V 195A TO220AB

    Infineon Technologies

    		 6,205 -
    RFQ
    		IRLB3036GPBF

    Datenblatt

         		HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IRLR024ZTRPBF

    IRLR024ZTRPBF

    MOSFET N-CH 55V 16A DPAK

    Infineon Technologies

    		 7,702 -
    RFQ
    		IRLR024ZTRPBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 16A (Tc) 4.5V, 10V 58mOhm @ 9.6A, 10V 3V @ 250µA 9.9 nC @ 5 V ±16V 380 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    IRLU8726PBF

    IRLU8726PBF

    MOSFET N-CH 30V 86A IPAK

    Infineon Technologies

    		 9,896 -
    RFQ
    		IRLU8726PBF

    Datenblatt

         		HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 86A (Tc) 4.5V, 10V 5.8mOhm @ 25A, 10V 2.35V @ 50µA 23 nC @ 4.5 V ±20V 2150 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    IRLU8729-701PBF

    IRLU8729-701PBF

    MOSFET N-CH 30V 58A IPAK

    Infineon Technologies

    		 8,374 -
    RFQ
    		IRLU8729-701PBF

    Datenblatt

         		HEXFET® TO-252-4, DPAK (3 Leads + Tab) Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 58A (Tc) 4.5V, 10V 8.9mOhm @ 25A, 10V 2.35V @ 25µA 16 nC @ 4.5 V ±20V 1350 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount I-PAK (LF701)
    FK3306010L

    FK3306010L

    MOSFET N-CH 60V 100MA SSSMINI3

    Panasonic Electronic Components

    		 2,183 -
    RFQ
    		FK3306010L

    Datenblatt

         		- SOT-723 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100mA (Ta) 2.5V, 4V 12Ohm @ 10mA, 4V 1.5V @ 1µA - ±12V 12 pF @ 3 V - 100mW (Ta) 150°C (TJ) - - Surface Mount SSSMini3-F2-B
    IRF6201PBF

    IRF6201PBF

    MOSFET N-CH 20V 27A 8SO

    Infineon Technologies

    		 7,793 -
    RFQ
    		IRF6201PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 20 V 27A (Ta) 2.5V, 4.5V 2.45mOhm @ 27A, 4.5V 1.1V @ 100µA 195 nC @ 4.5 V ±12V 8555 pF @ 16 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF9317PBF

    IRF9317PBF

    MOSFET P-CH 30V 16A 8SO

    Infineon Technologies

    		 6,417 -
    RFQ
    		IRF9317PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 6.6mOhm @ 16A, 10V 2.4V @ 50µA 92 nC @ 10 V ±20V 2820 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF9321PBF

    IRF9321PBF

    MOSFET P-CH 30V 15A 8SO

    Infineon Technologies

    		 6,708 -
    RFQ
    		IRF9321PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 7.2mOhm @ 15A, 10V 2.4V @ 50µA 98 nC @ 10 V ±20V 2590 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF9328PBF

    IRF9328PBF

    MOSFET P-CH 30V 12A 8SO

    Infineon Technologies

    		 4,286 -
    RFQ
    		IRF9328PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 11.9mOhm @ 12A, 10V 2.4V @ 25µA 52 nC @ 10 V ±20V 1680 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
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