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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IRF6201PBF

    IRF6201PBF

    MOSFET N-CH 20V 27A 8SO

    Infineon Technologies

    		 7,793 -
    RFQ
    		IRF6201PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 20 V 27A (Ta) 2.5V, 4.5V 2.45mOhm @ 27A, 4.5V 1.1V @ 100µA 195 nC @ 4.5 V ±12V 8555 pF @ 16 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF9317PBF

    IRF9317PBF

    MOSFET P-CH 30V 16A 8SO

    Infineon Technologies

    		 6,417 -
    RFQ
    		IRF9317PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 6.6mOhm @ 16A, 10V 2.4V @ 50µA 92 nC @ 10 V ±20V 2820 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF9321PBF

    IRF9321PBF

    MOSFET P-CH 30V 15A 8SO

    Infineon Technologies

    		 6,708 -
    RFQ
    		IRF9321PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 7.2mOhm @ 15A, 10V 2.4V @ 50µA 98 nC @ 10 V ±20V 2590 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF9328PBF

    IRF9328PBF

    MOSFET P-CH 30V 12A 8SO

    Infineon Technologies

    		 4,286 -
    RFQ
    		IRF9328PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 11.9mOhm @ 12A, 10V 2.4V @ 25µA 52 nC @ 10 V ±20V 1680 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF9333PBF

    IRF9333PBF

    MOSFET P-CH 30V 9.2A 8SO

    Infineon Technologies

    		 7,310 -
    RFQ
    		IRF9333PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 30 V 9.2A (Ta) 4.5V, 10V 19.4mOhm @ 9.2A, 10V 2.4V @ 25µA 38 nC @ 10 V ±20V 1110 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF9335PBF

    IRF9335PBF

    MOSFET P-CH 30V 5.4A 8SO

    Infineon Technologies

    		 5,691 -
    RFQ
    		IRF9335PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 30 V 5.4A (Ta) 4.5V, 10V 59mOhm @ 5.4A, 10V 2.4V @ 10µA 14 nC @ 10 V ±20V 386 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF9388PBF

    IRF9388PBF

    MOSFET P-CH 30V 12A 8SO

    Infineon Technologies

    		 4,527 -
    RFQ
    		IRF9388PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 10V, 20V 8.5mOhm @ 12A, 20V 2.4V @ 25µA 52 nC @ 10 V ±25V 1680 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF9393PBF

    IRF9393PBF

    MOSFET P-CH 30V 9.2A 8SO

    Infineon Technologies

    		 3,559 -
    RFQ
    		IRF9393PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 30 V 9.2A (Ta) 10V, 20V 13.3mOhm @ 9.2A, 20V 2.4V @ 25µA 38 nC @ 10 V ±25V 1110 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRFH5106TRPBF

    IRFH5106TRPBF

    MOSFET N-CH 60V 21A/100A 8PQFN

    Infineon Technologies

    		 2,218 -
    RFQ
    		IRFH5106TRPBF

    Datenblatt

         		HEXFET® 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 21A (Ta), 100A (Tc) 10V 5.6mOhm @ 50A, 10V 4V @ 250µA 75 nC @ 10 V ±20V 3090 pF @ 25 V - 3.6W (Ta), 114W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    IRFH5110TRPBF

    IRFH5110TRPBF

    MOSFET N-CH 100V 11A/63A 8PQFN

    Infineon Technologies

    		 6,412 -
    RFQ
    		IRFH5110TRPBF

    Datenblatt

         		HEXFET® 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 11A (Ta), 63A (Tc) 10V 12.4mOhm @ 37A, 10V 4V @ 100µA 72 nC @ 10 V ±20V 3152 pF @ 25 V - 3.6W (Ta), 114W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    IRFH5207TRPBF

    IRFH5207TRPBF

    MOSFET N-CH 75V 13A/71A 8PQFN

    Infineon Technologies

    		 7,408 -
    RFQ
    		IRFH5207TRPBF

    Datenblatt

         		HEXFET® 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75 V 13A (Ta), 71A (Tc) 10V 9.6mOhm @ 43A, 10V 4V @ 100µA 59 nC @ 10 V ±20V 2474 pF @ 25 V - 3.6W (Ta), 105W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    IRFH5303TRPBF

    IRFH5303TRPBF

    MOSFET N-CH 30V 23A/82A 8PQFN

    Infineon Technologies

    		 7,804 -
    RFQ
    		IRFH5303TRPBF

    Datenblatt

         		HEXFET® 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 82A (Tc) 4.5V, 10V 4.2mOhm @ 49A, 10V 2.35V @ 50µA 41 nC @ 10 V ±20V 2190 pF @ 15 V - 3.6W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    IRLH5036TRPBF

    IRLH5036TRPBF

    MOSFET N-CH 60V 20A/100A 8PQFN

    Infineon Technologies

    		 6,797 -
    RFQ
    		IRLH5036TRPBF

    Datenblatt

         		HEXFET® 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta), 100A (Tc) 4.5V, 10V 4.4mOhm @ 50A, 10V 2.5V @ 150µA 90 nC @ 10 V ±16V 5360 pF @ 25 V - 3.6W (Ta), 160W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    IRF6633ATRPBF

    IRF6633ATRPBF

    MOSFET N-CH 20V 16A DIRECTFET

    Infineon Technologies

    		 8,571 -
    RFQ
    		IRF6633ATRPBF

    Datenblatt

         		HEXFET® DirectFET™ Isometric MU Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 16A (Ta), 69A (Tc) 4.5V, 10V 5.6mOhm @ 16A, 10V 2.2V @ 250µA 17 nC @ 4.5 V ±20V 1410 pF @ 10 V - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MU
    IRF6711STRPBF

    IRF6711STRPBF

    MOSFET N-CH 25V 19A DIRECTFET

    Infineon Technologies

    		 4,467 -
    RFQ
    		IRF6711STRPBF

    Datenblatt

         		HEXFET® DirectFET™ Isometric SQ Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 19A (Ta), 84A (Tc) 4.5V, 10V 3.8mOhm @ 19A, 10V 2.35V @ 25µA 20 nC @ 4.5 V ±20V 1810 pF @ 13 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ SQ
    IRF6713STRPBF

    IRF6713STRPBF

    MOSFET N-CH 25V 22A DIRECTFET

    Infineon Technologies

    		 2,621 -
    RFQ
    		IRF6713STRPBF

    Datenblatt

         		HEXFET® DirectFET™ Isometric SQ Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 22A (Ta), 95A (Tc) 4.5V, 10V 3mOhm @ 22A, 10V 2.4V @ 50µA 32 nC @ 4.5 V ±20V 2880 pF @ 13 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ SQ
    IRF6797MTRPBF

    IRF6797MTRPBF

    MOSFET N-CH 25V 36A DIRECTFET

    Infineon Technologies

    		 5,705 -
    RFQ
    		IRF6797MTRPBF

    Datenblatt

         		HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 36A (Ta), 210A (Tc) 4.5V, 10V 1.4mOhm @ 38A, 10V 2.35V @ 150µA 68 nC @ 4.5 V ±20V 5790 pF @ 13 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MX
    IRF6798MTRPBF

    IRF6798MTRPBF

    MOSFET N-CH 25V 37A DIRECTFET

    Infineon Technologies

    		 2,661 -
    RFQ
    		IRF6798MTRPBF

    Datenblatt

         		HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 37A (Ta), 197A (Tc) 4.5V, 10V 1.3mOhm @ 37A, 10V 2.35V @ 150µA 75 nC @ 4.5 V ±20V 6560 pF @ 13 V Schottky Diode (Body) 2.8W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MX
    62-0203PBF

    62-0203PBF

    MOSFET P-CH 12V 16A 8SO

    Infineon Technologies

    		 2,194 -
    RFQ
    		62-0203PBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 12 V 16A (Ta) 1.8V, 4.5V 7mOhm @ 16A, 4.5V 900mV @ 250µA 91 nC @ 4.5 V ±8V 8676 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF8113GPBF

    IRF8113GPBF

    MOSFET N-CH 30V 17.2A 8SO

    Infineon Technologies

    		 8,984 -
    RFQ
    		IRF8113GPBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17.2A (Ta) 4.5V, 10V 5.6mOhm @ 17.2A, 10V 2.2V @ 250µA 36 nC @ 4.5 V ±20V 2910 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
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