Einzelne Bipolartransistoren

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Transistortyp Strom - Kollektor (Ic) (Max) Spannung - Kollektor-Emitter-Durchbruch (Max) Vce-Sättigung (Max) @ Ib, Ic Strom - Kollektor-Abschaltung (Max) DC-Stromverstärkung (hFE) (Min) @ Ic, Vce Leistung – Max Frequenz - Übergang Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Einzelne Bipolartransistoren

TomatoElec liefert einzelne Bipolartransistoren für Industrie, Automotive, Kommunikation, Steuerung und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst häufig verwendete einzelne BJT-Transistorprodukte für Verstärkungs-, Schalt- und Signalsteuerungsschaltungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung einzelner Bipolartransistoren und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von Transistoren, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Transistortyp Strom - Kollektor (Ic) (Max) Spannung - Kollektor-Emitter-Durchbruch (Max) Vce-Sättigung (Max) @ Ib, Ic Strom - Kollektor-Abschaltung (Max) DC-Stromverstärkung (hFE) (Min) @ Ic, Vce Leistung – Max Frequenz - Übergang Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
2SA949-Y(T6SHRP,FM

2SA949-Y(T6SHRP,FM

TRANS PNP 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

2,704 -
RFQ
2SA949-Y(T6SHRP,FM

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA949-Y(TE6,F,M)

2SA949-Y(TE6,F,M)

TRANS PNP 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

6,530 -
RFQ
2SA949-Y(TE6,F,M)

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA949-Y,F(J

2SA949-Y,F(J

TRANS PNP 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

6,539 -
RFQ
2SA949-Y,F(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA949-Y,ONK-1F(J

2SA949-Y,ONK-1F(J

TRANS PNP 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

3,107 -
RFQ
2SA949-Y,ONK-1F(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA949-Y,ONK-1F(M

2SA949-Y,ONK-1F(M

TRANS PNP 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

9,915 -
RFQ
2SA949-Y,ONK-1F(M

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA965-O(TE6,F,M)

2SA965-O(TE6,F,M)

TRANS PNP 120V 0.8A TO-92MOD

Toshiba Semiconductor and Storage

6,257 -
RFQ
2SA965-O(TE6,F,M)

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA965-O,F(J

2SA965-O,F(J

TRANS PNP 120V 0.8A TO-92MOD

Toshiba Semiconductor and Storage

7,540 -
RFQ
2SA965-O,F(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA965-Y(F,M)

2SA965-Y(F,M)

TRANS PNP 120V 0.8A TO-92MOD

Toshiba Semiconductor and Storage

8,927 -
RFQ
2SA965-Y(F,M)

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA965-Y(T6CANO,FM

2SA965-Y(T6CANO,FM

TRANS PNP 120V 0.8A TO-92MOD

Toshiba Semiconductor and Storage

4,018 -
RFQ
2SA965-Y(T6CANO,FM

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA965-Y,F(J

2SA965-Y,F(J

TRANS PNP 120V 0.8A TO-92MOD

Toshiba Semiconductor and Storage

7,310 -
RFQ
2SA965-Y,F(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA965-Y,SWFF(M

2SA965-Y,SWFF(M

TRANS PNP 120V 0.8A TO-92MOD

Toshiba Semiconductor and Storage

6,496 -
RFQ
2SA965-Y,SWFF(M

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA965-Y,T6F(J

2SA965-Y,T6F(J

TRANS PNP 120V 0.8A TO-92MOD

Toshiba Semiconductor and Storage

8,550 -
RFQ
2SA965-Y,T6F(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA965-Y,T6KOJPF(J

2SA965-Y,T6KOJPF(J

TRANS PNP 120V 0.8A TO-92MOD

Toshiba Semiconductor and Storage

5,263 -
RFQ
2SA965-Y,T6KOJPF(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SB1375,CLARIONF(M

2SB1375,CLARIONF(M

TRANS PNP 60V 3A TO-220NIS

Toshiba Semiconductor and Storage

6,664 -
RFQ
2SB1375,CLARIONF(M

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 3 A 60 V 1.5V @ 200mA, 2A 10µA (ICBO) 100 @ 500mA, 5V 2 W 9MHz 150°C (TJ) - - Through Hole TO-220NIS
2SB1457(T6CANO,F,M

2SB1457(T6CANO,F,M

TRANS PNP 100V 2A TO-92MOD

Toshiba Semiconductor and Storage

7,532 -
RFQ
2SB1457(T6CANO,F,M

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) - - Through Hole TO-92MOD
2SB1457(T6CNO,A,F)

2SB1457(T6CNO,A,F)

TRANS PNP 100V 2A TO-92MOD

Toshiba Semiconductor and Storage

7,670 -
RFQ
2SB1457(T6CNO,A,F)

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) - - Through Hole TO-92MOD
2SB1457(T6DW,F,M)

2SB1457(T6DW,F,M)

TRANS PNP 100V 2A TO-92MOD

Toshiba Semiconductor and Storage

5,753 -
RFQ
2SB1457(T6DW,F,M)

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) - - Through Hole TO-92MOD
2SB1457(TE6,F,M)

2SB1457(TE6,F,M)

TRANS PNP 100V 2A TO-92MOD

Toshiba Semiconductor and Storage

3,754 -
RFQ
2SB1457(TE6,F,M)

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) - - Through Hole TO-92MOD
2SB1457,T6TOTOF(J

2SB1457,T6TOTOF(J

TRANS PNP 100V 2A TO-92MOD

Toshiba Semiconductor and Storage

7,515 -
RFQ
2SB1457,T6TOTOF(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) - - Through Hole TO-92MOD
2SB1481(TOJS,Q,M)

2SB1481(TOJS,Q,M)

TRANS PNP 100V 4A TO-220NIS

Toshiba Semiconductor and Storage

8,311 -
RFQ
2SB1481(TOJS,Q,M)

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 4 A 100 V 1.5V @ 6mA, 3A 2µA (ICBO) 2000 @ 3A, 2V 2 W - 150°C (TJ) - - Through Hole TO-220NIS
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